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    onsemi 2N5551TF

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551TF Cut Tape 45,477 1
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    2N5551TF Reel 44,000 2,000
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    Verical 2N5551TF 20,000 2,000
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    2N5551TF Cut Strips 12,053 9 Weeks 1
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    Avnet Asia 2N5551TF 9 Weeks 20,000
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    onsemi 2N5550TAR

    TRANS NPN 140V 0.6A TO92-3
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    DigiKey 2N5550TAR Cut Tape 37,530 1
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    2N5550TAR Ammo Pack 32,000 2,000
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    Mouser Electronics 2N5550TAR 6,995
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    Arrow Electronics 2N5550TAR 81 1
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    Newark 2N5550TAR Bulk 6,000
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    Rochester Electronics 2N5550TAR 95,383 1
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    EBV Elektronik 2N5550TAR 12 Weeks 2,000
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    Flip Electronics 2N5550TAR 130,336
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    Master Electronics 2N5550TAR 14,000
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    onsemi 2N5551TA

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551TA Cut Tape 20,702 1
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    2N5551TA Ammo Pack 16,000 2,000
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    Avnet Americas 2N5551TA Bulk 11 Weeks, 4 Days 2,000
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    Mouser Electronics 2N5551TA 27,597
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    Verical 2N5551TA 10,000 2,000
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    Arrow Electronics 2N5551TA 34,000 9 Weeks 2,000
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    Newark 2N5551TA Reel 6,000 2,000
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    2N5551TA Cut Tape 217 1
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    TME 2N5551TA 1,345 1
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    Avnet Silica 2N5551TA 12,000 10 Weeks 2,000
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    EBV Elektronik 2N5551TA 20,000 11 Weeks 2,000
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    Master Electronics 2N5551TA 10,000
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    New Advantage Corporation 2N5551TA 16,000 1
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    onsemi 2N5551YBU

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551YBU Bulk 19,141 1
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    Avnet Americas 2N5551YBU Bulk 20,000
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    Newark 2N5551YBU Bulk 10,000
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    Rochester Electronics 2N5551YBU 46,461 1
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    onsemi 2N5550TFR

    TRANS NPN 140V 0.6A TO92-3
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    DigiKey 2N5550TFR Cut Tape 18,546 1
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    2N5550TFR Reel 16,000 2,000
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    Mouser Electronics 2N5550TFR 9,159
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    Arrow Electronics 2N5550TFR 9,790 36 Weeks 1
    • 1 $0.1045
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    Newark 2N5550TFR Reel 6,000
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    Bristol Electronics 2N5550TFR 790 27
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    Rochester Electronics 2N5550TFR 112,874 1
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    TME 2N5550TFR 1
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    EBV Elektronik 2N5550TFR 12 Weeks 2,000
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    Master Electronics 2N5550TFR 16,000
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    2N555 Datasheets (337)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N555 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N555 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N555 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N555 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N555 Unknown GE Transistor Specifications Scan PDF
    2N555 Unknown Cross Reference Datasheet Scan PDF
    2N555 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N555 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N555 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N555 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N555 Unknown Vintage Transistor Datasheets Scan PDF
    2N555 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N555 Semitron Germanium Power Transistors Scan PDF
    2N555 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5550 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
    2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    2N5550 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    2N5550 Korea Electronics TRANS GP BJT NPN 140V 0.6A 3TO-92 Original PDF
    2N5550 On Semiconductor Amplifier Transistors NPN Silicon Original PDF
    2N5550 On Semiconductor Amplifier Transistor NPN Original PDF
    ...

    2N555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current max. 600mA High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original
    PDF 2N5551 600mA) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION


    Original
    PDF 2N5551 2N5551L-x-AB3-R 2N5551G-x-AB3-R OT-89 2N5551L-x-T92-B 2N5551G-x-T92-B 2N5551L-x-T92-K 2N5551G-x-T92-K 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B

    2N5551 circuit

    Abstract: 2N5550 2N5551 2N555 1N914
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


    Original
    PDF 2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914

    2N555

    Abstract: 2N5559
    Text: SavantIC Semiconductor Product Specification 2N5559 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power


    Original
    PDF 2N5559 2N555 2N5559

    transistor 2n5550

    Abstract: 2N5550
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original
    PDF 2N5550 C-120 2N5550Rev190701 transistor 2n5550 2N5550

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 5550 K 3 No. Item 816 2 4 Marking Description 2N Series Name 5550 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year


    Original
    PDF 2N5550 transistor 2n5550 2N5550

    2N555

    Abstract: 2N5550S SOT-23 2N5550S
    Text: SEMICONDUCTOR 2N5550S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZP 1 2 Item Marking Description Device Mark ZP 2N5550S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original
    PDF 2N5550S OT-23 2N555 2N5550S SOT-23 2N5550S

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V


    Original
    PDF 2N5550 100nA 100MHz transistor 2n5550 2N5550

    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


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    PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    transistor 2n5551

    Abstract: 2N5551
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE Boca Semiconductor Corp. BSC High Voltage NPN Transistor For General Purpose And Telephony Applications.


    Original
    PDF 2N5551 25deg transistor 2n5551 2N5551

    transistor 2N5401

    Abstract: 2N5401 2N5551 CMLT5554
    Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


    Original
    PDF CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January transistor 2N5401 CMLT5554

    2N5550

    Abstract: No abstract text available
    Text: 2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current max.600mA


    Original
    PDF 2N5550 600mA) 8-Mar-2010 100MHz 2N5550

    2N5551

    Abstract: No abstract text available
    Text: 2N5551 NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C PD


    Original
    PDF 2N5551 270TYP 2N5551

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.


    Original
    PDF 2N5551 100uAdc, 10uAdc, 35Vdc 120Vdc, 300us, 10Vdc, 10mAdc)

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • • • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers


    Original
    PDF 2N5551 100uAdc,

    2N5551

    Abstract: No abstract text available
    Text: 2N5551 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.6 A Collector-base voltage V (BR)CBO :180 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original
    PDF 2N5551 30MHz 100mA 2N5551

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original
    PDF 2N5551 100uA

    2n5555

    Abstract: 2N5555-D
    Text: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10


    Original
    PDF 2N5555 226AA) 2n5555 2N5555-D

    2N5551

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage


    OCR Scan
    PDF 2N5551 100MHz 2N5551

    Untitled

    Abstract: No abstract text available
    Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0


    OCR Scan
    PDF 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N64S4 NF5101 2N6449 2N6450

    Untitled

    Abstract: No abstract text available
    Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50


    OCR Scan
    PDF Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551

    2N5552

    Abstract: 432 t TO-5 stud
    Text: 2N5552 POWER TRANSISTORS 5552-4 10 Amp, 120V, Planar NPN DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply pulse amplifier and similar high efficiency power


    OCR Scan
    PDF 2N5552 10MHz 250ma 250ma 432 t TO-5 stud

    2N4410

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N4410 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS


    OCR Scan
    PDF 2N4410 2N5551 2N4410