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    2N3507L Price and Stock

    Microchip Technology Inc 2N3507L

    NPN POWER SILICON TRANSISTORS
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    Microchip Technology Inc JAN2N3507L

    TRANS NPN 50V 3A TO5
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    Microchip Technology Inc JANS2N3507L

    POWER BJT
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    Microchip Technology Inc JANTX2N3507L

    TRANS NPN 50V 3A TO5
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    Microchip Technology Inc JANTXV2N3507L

    TRANS NPN 50V 3A TO5
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    2N3507L Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3507L Defense Supply Center Columbus NPN Silicon Switching Transistor Original PDF
    2N3507L Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN POWER SILICON TRANSISTORS Original PDF
    2N3507L Semelab Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package - Pol=NPN / Pkg=TO5 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3507L Semico NPN transistor Original PDF
    2N3507L Semico Chip: geometry 1506 polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3507LJ Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 Original PDF
    2N3507LJS Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 Original PDF
    2N3507LJV Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 Original PDF
    2N3507LJX Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 Original PDF

    2N3507L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3507L

    Abstract: No abstract text available
    Text: 2N3507L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF 2N3507L O205AA) 20-Aug-02 2N3507L

    2N3507L

    Abstract: 2N3507LJ 2N3507LJS 2N3507LJV 2N3507LJX
    Text: 2N3507L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507LJ


    Original     		PDF 2N3507L MIL-PRF-19500 2N3507LJ) 2N3507LJX) 2N3507LJV) 2N3507LJS) MIL-STD-750 2N3507L 2N3507LJ 2N3507LJS 2N3507LJV 2N3507LJX

    2N3507L

    Abstract: 2N3507LJ 2N3507LJS 2N3507LJV 2N3507LJX
    Text: 2N3507L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507LJ • JANTX level (2N3507LJX)


    Original     		PDF 2N3507L MIL-PRF-19500 2N3507LJ) 2N3507LJX) 2N3507LJV) 2N3507LJS) MIL-STD-750 2N3507L 2N3507LJ 2N3507LJS 2N3507LJV 2N3507LJX

    Untitled

    Abstract: No abstract text available
    Text: 2N3507L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507LJ


    Original     		PDF 2N3507L MIL-PRF-19500 2N3507LJ) 2N3507LJX) 2N3507LJV) 2N3507LJS) MIL-STD-750 MIL-PRF-19500/349

    Untitled

    Abstract: No abstract text available
    Text: 2N3507L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507LJ • JANTX level (2N3507LJX)


    Original     		PDF 2N3507L MIL-PRF-19500 2N3507LJ) 2N3507LJX) 2N3507LJV) 2N3507LJS) MIL-STD-750 MIL-PRF-19500/349

    2N3507L

    Abstract: No abstract text available
    Text: Data Sheet No. 2N3507L Generic Part Number: 2N3507L Type 2N3507L Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-5 case.


    Original     		PDF 2N3507L MIL-PRF-19500/349 MIL-PRF-19500/349 2N3507L

    1506

    Abstract: 2N3507 2C3506 2N3506 2N3506L 2N3507L 22KA chip type geometry
    Text: Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and


    Original     		PDF 2C3506 2N3506, 2N3507 2C3506 2N3506L, 2N3507, 2N3507L 1506 2N3507 2N3506 2N3506L 2N3507L 22KA chip type geometry

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3507AL 2N3506 2N3507 T4-LDS-0016-1,

    2N3506

    Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2000. INCH-POUND MIL-PRF-19500/349E 28 August 2000 SUPERSEDING MIL-PRF-19500/349D 12 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING


    Original     		PDF MIL-PRF-19500/349E MIL-PRF-19500/349D 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, 2N3506 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L

    2N3507

    Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2009. MIL-PRF-19500/349H 25 August 2009 SUPERSEDING MIL-PRF-19500/349G 1 August 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/349H MIL-PRF-19500/349G 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507, 2N3507L, 2N3507 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent

    2N3507

    Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507AL 2N3507L 2N3507 JANTX 072040
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL


    Original     		PDF MIL-PRF-19500/349 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL 2N3507 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507AL 2N3507L 2N3507 JANTX 072040

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3506 2N3507 T4-LDS-0016-1,

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 Data S heet No. 2N 3507L $ id L SEMICONDUCTORS Type 2N3507L G eneric Part Num ber: 2N3507L G eom etry 1506 P olarity NPN Q ual Level: JAN - JA N TXV


    OCR Scan     		PDF 3507L 2N3507L MIL-PRF-19500/349