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Central Semiconductor Corp 2N3117-PBFREE TRANS NPN 60V 0.05A TO18
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DigiKey	2N3117-PBFREE	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $3.2725	Buy Now
Central Semiconductor Corp 2N3117 PBFREE Trans GP BJT NPN 60V 0.05A 360mW 3-Pin TO-18
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Verical	2N3117 PBFREE		1,571		20	1 - 10 - 100 $4.7505 1000 $4.7505 10000 $4.7505	Buy Now
Mouser Electronics	2N3117 PBFREE		3,078			1 $6.02 10 $4.98 100 $3.76 1000 $3.28 10000 $3.19	Buy Now
Arrow Electronics	2N3117 PBFREE		1,571	10 Weeks	20	1 - 10 - 100 $3.7525 1000 $3.6515 10000 $3.6515	Buy Now
Avnet Americas	2N3117 PBFREE	Box			2,000	1 - 10 - 100 - 1000 - 10000 $3.1816	Buy Now
Central Semiconductor Corp 2N3117 TIN/LEAD Bipolar Transistors - BJT 60Vcbo 60Vceo 6.0V 50mA 360mW
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Mouser Electronics	2N3117 TIN/LEAD					1 - 10 - 100 - 1000 - 10000 $3.48	Get Quote
Avnet Americas	2N3117 TIN/LEAD	Box			2,000	1 - 10 - 100 - 1000 - 10000 $3.41079	Buy Now
Central Semiconductor Corp 2N3117 Bipolar Transistor NPN Amplifier/Switch 50mA 60V 3-Pin TO-18 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N3117)
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Avnet Americas	2N3117	Box		6 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
National Semiconductor Corporation 2N3117
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Bristol Electronics	2N3117		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ES Components	2N3117		2,464			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N3117 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3117	Central Semiconductor	Leaded Small Signal Transistor General Purpose	Original	PDF
2N3117	Central Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60V 50MA TO-18	Original	PDF
2N3117	Central Semiconductor	Metal Can Transistors	Scan	PDF
2N3117	Central Semiconductor	METAL CAN Transistors	Scan	PDF
2N3117	Central Semiconductor	NPN METAL CAN - SWITCHING AND GENERAL PURPOSE	Scan	PDF
2N3117	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2N3117	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
2N3117	Fairchild Semiconductor	NPN low level low noise amplifier.	Scan	PDF
2N3117	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N3117	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3117	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3117	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N3117	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2N3117	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF

2N3117	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N3117	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N3117	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N3117	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N3117	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N3117	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N3117 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S07T_2N3117 Abstract: 2n3117 Text: 2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C	Original	PDF	2N3117 2N3117 150mA, 30MHz 10kHz S07T_2N3117
Untitled Abstract: No abstract text available Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3117 NPN SILICON TRANSISTOR TO-18CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage UNITS SYMBOL ^CBO ^ Collector-Emitter Voltage VCEO	Original	PDF	2N3117 O-18CASE
Untitled Abstract: No abstract text available Text: 2N3117 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)1.0m	Original	PDF	2N3117 Freq60M
switch NPN Abstract: BSY18 2N2369 2n4390 Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	PDF	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390
JAN2N760A Abstract: 2N3692 2n2510 2N3565 Text: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18	Original	PDF	2N760 2N760A JAN2N760A 2N929 JAN2N929 157kHz 2N3692 2n2510 2N3565
2N3117 Abstract: No abstract text available Text: 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 5o mA Ie < o m eo V p d is s 3eo mW @ Ta = 25 °C Tj -es 0C to +2oo 0C Ts t g -e5 0C to +2oo 0C 0 je	OCR Scan	PDF	2N3117 2N3117
2N859 Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917 Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385	OCR Scan	PDF	2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
2N1256 S P Abstract: No abstract text available Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min	OCR Scan	PDF	2N3117 2N4383 2N4384 2N4385 2N4386 CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 2N1256 S P
2N3117 Abstract: No abstract text available Text: TYPE 2N3117 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -5 6 7 8 8 7 6 , J A N U A R Y 1 96 7 DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hi, 100 Hz, 1 kHz and 10 kHz • High Guaranteed hF[ at	OCR Scan	PDF	2N3117 752SJ
2N217 Abstract: 2N2708 2N4135 2N859 2N915 2N3117 2N4383 2N4384 2N4385 2N4386 Text: NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER Cont'd. TYPE NO. VCB 2N3117 2N4383 2N4384 2N4385 2N4386 • 60 40 40 40 40 V VCE V EB hpE at •c Vce mA V V mA MHz 1.0 10 10 10 10 60 VcE(s) at V V min max 60 30 30 30 30 6 ■ 5 5 250 100 100 40 500 500 500 500	OCR Scan	PDF	2N3117 2N4383 2N4384 2N4385 2N4386 2N915 2N916 CBR10 CBR25 CBR12 2N217 2N2708 2N4135 2N859 2N3117
Untitled Abstract: No abstract text available Text: ASI 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. MAXIMUM RATINGS lc 50 mA V ce 60 V P diss 360 mW @ Ta = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 55 °C/W CHARACTERISTICS t c = 25 °c	OCR Scan	PDF	2N3117 2N3117
2N4134 Abstract: 2N4135 2N915 2N1256 2N4384 2n726 Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385 2M4386	OCR Scan	PDF	2n3117 2n4383 2n4384 2n4385 2n4386 2n915 to-18 2n916 CBR12 CBR30 2N4134 2N4135 2N1256 2n726
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
BCY59-9 Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A Text: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0	OCR Scan	PDF	2N720 2N720A 2N912 2N2S09 2N2368 2N2369 2N2369A 2N2615 2N2616 2N783 BCY59-9 bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719

SE4020 Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484 Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max	OCR Scan	PDF	PN4249 2N3965 BFX37 2N3962 2N5961 SE4020 O-106 2N2484 EN2484 SE4020 fairchild to-106 se7055 BFY57 BC532 2N2484 PN4889 EN2484
2N2483 Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A Text: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max	OCR Scan	PDF	2N2483 2N2484 2N718A 2N720 2N720A 2N834 2N910 2N911 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
BCY591 Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings	OCR Scan	PDF	BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
2n3547 Abstract: 2N3549 Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (lA) MIN MIN MIN MAX ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton	OCR Scan	PDF	2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549
2n3298 Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613 Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max	OCR Scan	PDF	2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888
N3020 Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F \| n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220	OCR Scan	PDF	2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053
THC3251A Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369 Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro	OCR Scan	PDF	SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE
2N9308 Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238 Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5	OCR Scan	PDF	00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238
BCY79-9 Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720 Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.	OCR Scan	PDF	2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	PDF	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

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Central Semiconductor Corp 2N3117-PBFREE

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2N3117 Datasheets (34)

2N3117 Datasheets Context Search

S07T_2N3117

Untitled

Untitled

switch NPN

JAN2N760A

2N3117

2N859

2N1256 S P

2N3117

2N217

Untitled

2N4134

IC HXJ 2038

BCY59-9

SE4020

2N2483

BCY591

2n3547

2n3298

N3020

THC3251A

2N9308

BCY79-9

TRIAC 97A6