2N2904U1 Search Results

2N2904U1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N2904U1		Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR		Original	PDF

2N2904U1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C ・Low Leakage Current @VCE=30V, VEB=3V. D ・Excellent DC Current Gain Linearity.	Original	PDF	2N2904U1 100mA
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B B1 DIM A A1 B 6 2 5 3 4 C A A1 C 1 D B1 C H 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G 1. Q 1 2. Q 2	Original	PDF	2N2904U1
2N2904U1 Abstract: No abstract text available Text: SEMICONDUCTOR 2N2904U1 MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZB 2N2904U1 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.	Original	PDF	2N2904U1 2N2904U1
1N916 Abstract: 2N2904U1 Text: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C Low Leakage Current @VCE=30V, VEB=3V. D Excellent DC Current Gain Linearity.	Original	PDF	2N2904U1 1N916 2N2904U1
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
Untitled Abstract: No abstract text available Text: SEM ICONDUCTOR 2N2904U1 TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E • Low Leakage Current 33 : ICEjj=50nA Max. , IBL=50nA(Max.) □ •o @Vce=30V, Veb=3V. 4 ~ ~ \|d • Excellent DC Current Gain Linearity.	OCR Scan	PDF	2N2904U1 Collector-Emitter008. 300/iS,