MB81C1501
Abstract: CXK1206M H5M4C500L-5
Text: — 366 7 — 1/ — A SS • J °E o -i § TC 521000P/J //P D 42270-60 « / - * N EC y * v * is C X K 12 06 M MB81C1501 SONY * ± * 262144W x 4 bits (32 76 8T K k X x 8 t y h y ' 1 7 293760W x 4 bits • 2 h««; • > ' ] r ^ A i ) x 4 bits • 2 tf-h « (£
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OCR Scan
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PDF
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PD42270-60
TC521000P/J
CXK1206M
MB81C1501
H5M4C500L-5
239330WX
262144WX
32768T
293760WX
1920W
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MB81C1501
Abstract: CXK1206M H5M4C500L-5
Text: — 366 — 7 1/—A • J °E o -i § SS « //PD42270-60 /- * NEC y * v * is TC521000P/J 262144W x 4 bits (32768T K k X x 8 t y h y ' 1 7 239330WX 4 bits (910 S x 263 7 4 > x 4 bits) • 2 tf-h « (£ v 'J 7 ^ À * J x 4 b i t s w 'I T x 4 bits • 2
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OCR Scan
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PDF
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uPD42270-60
239330WX
62144W
32768T
TC521000P/J
CXK1206M
93760W
MB81C1501
H5M4C500L-5
1920W
MB81C1501
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"24 pin" DRAM
Abstract: mb81c1501
Text: Section 3 Application Specific DRAM s — Page Devfc« Maximum Accesa Tima na 3-3 MB81461-12 -15 120 150 A t a Glance Capacity Package Options ORAM: 262144 bits (65536W x 4b) 1016 bits (256w x 4b) 24- pin Plastic DIP, ZIP SAM : 3-35 MB81461B-12 -15 120 150
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OCR Scan
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PDF
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MB81461-12
MB81461B-12
5536W
262144wx4b)
512wx4b)
262144wx
93760W
293760w
"24 pin" DRAM
mb81c1501
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MB81C1501
Abstract: CXK1206M H5M4C500L-5
Text: — 366 — 7 1/—A • J °E o -i § SS « //PD42270-60 /- * NEC y * v * is TC521000P/J 262144W x 4 bits (32768T K k X x 8 t y h y ' 1 7 239330WX 4 bits (910 S x 263 7 4 > x 4 bits) • 2 tf-h « (£ v 'J 7 ^ À * J x 4 b i t s w 'I T x 4 bits • 2
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OCR Scan
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PDF
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uPD42270-60
239330WX
62144W
32768T
TC521000P/J
CXK1206M
93760W
MB81C1501
H5M4C500L-5
1920W
MB81C1501
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