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    28C17 Search Results

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    28C17 Price and Stock

    Microchip Technology Inc AT28C17-20SC

    IC EEPROM 16KBIT PARALLEL 28SOIC
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    DigiKey AT28C17-20SC Tube
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    Microchip Technology Inc AT28C17-20PC

    IC EEPROM 16KBIT PARALLEL 28DIP
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    DigiKey AT28C17-20PC Tube
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    Rochester Electronics LLC CAT28C17AW20

    IC EEPROM 16KBIT 28SOIC
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    DigiKey CAT28C17AW20 Bulk 77
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    Microchip Technology Inc AT28C17E-20SC

    IC EEPROM 16KBIT PARALLEL 28SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AT28C17E-20SC Tube 270
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    Microchip Technology Inc AT28C17E-15PC

    IC EEPROM 16KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AT28C17E-15PC Tube 280
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    Find more 28C17 price and stock on Findchips.com

    28C17 Datasheets (388)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C17-10 General Instrument 16K ELECTRCALLY ERASABLE PROM Scan PDF
    28C17-15 General Instrument 16K ELECTRCALLY ERASABLE PROM Scan PDF
    28C17-15/D General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/D General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/L General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/P General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/S General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15I/W General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15/L General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15M/D General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15M/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15M/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15MR/D General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15MR/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15MR/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17-15M/S General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C17 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    200B

    Abstract: 28C17A DK-2750 RG41
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		28C17A 200B 28C17A DK-2750 RG41 PDF

    tce 1994

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC PLCC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 21 I/O6 17 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 16 DIP/ SOIC


    Original     		28C17A Time--150 Time--200 DS11127F-page tce 1994 PDF

    28C17A

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original     		28C17A D-85737 NL-5152 28C17A PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		28C17A Time--150 Time--200 32-Pin DS11127I-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 14 28 27


    Original     		28C17A DS11127G-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		28C17A Time--150 Time--200 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­


    OCR Scan     		bl032Gl QGG7S33 28C17A polS11127D-page bl032Ql 28C17AF 200ns DS11127D-page PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    OCR Scan     		28C16B 28C17B M28CxxB M28CxxB-W M28C16B M28C17B 2048x8 PDF

    Untitled

    Abstract: No abstract text available
    Text: $ M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Pow er Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or ms • Data Retention >10 years


    OCR Scan     		28C17A DS11127E-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro c h ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200n.s or 1ms • Data Retention >10 years


    OCR Scan     		28C17A 150ns DS11127C-6 DS11127C-8 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: M $ 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 ¡is or 1 ms • Data Retention >200 years • High Endurance- Minimum 104 Erase/Write Cycles


    OCR Scan     		ROY/B57C 1/01C 28C17A Time--200 DS11127H-page7-23 28C17A 8x20mm PDF

    200B

    Abstract: 28C17A
    Text: ^ÊÊÊÊÈ.^- & M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		28C17A 32-Pin MS-016AE DS00049M-page 200B 28C17A PDF

    M28C16

    Abstract: M28C17 PDIP28 S028
    Text: S G S -T H O M S O N iyitEïïïïÂQDtES M 28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation


    OCR Scan     		M28C17 PDIP28 M28C17 PLCC32 M28C16 PDIP28 S028 PDF

    Untitled

    Abstract: No abstract text available
    Text: M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 32-Pin S-016 DS00049M-page PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read A ccess Time— 150 ns • CMOS Technology fo r Low P ow er Dissipation - 30 m A Active - 100 (iA S tandby • Fast Byte W rite Time— 200 |xs o r 1 ms • Data Retention >10 years


    OCR Scan     		28C17A DS11127E-page PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 (iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 28C17AF DS11127E-page 8x20mm PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years


    OCR Scan     		28C17A 32-updates. DS11127F L103201 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years


    OCR Scan     		28C17A 150ns 200ns 28C17A DS11127C-7 28C17AF 200ns PDF

    28C17A

    Abstract: No abstract text available
    Text: ^ÊÊÊÊÈ.^- & M ic r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		28C17A 32-Pin MS-016AE DS00049M-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A DICE FORM Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • 250ns Access Time • CMOS Technology for Low Power Dissipation — 30mA Active — 100|iA Standby • Fast Byte Write Time— 1ms • Automatic Write Operation


    OCR Scan     		28C17A 250ns 28C17A The28C17A DS11134A-6 DS11134A-8 PDF

    10F-1C

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C17A M ig z r o n c h ip i 16K 2K X 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms • Data Retention >200 years


    OCR Scan     		32-Pin DS111271-page 10F-1C PDF

    28C17A

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 32-Pin 28-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K X 8 CMOS Electrically Erasable PROM need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device


    OCR Scan     		28C17A 28C17AF DS11127D-page PDF

    Untitled

    Abstract: No abstract text available
    Text: $ 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time— 200 |is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 32-Pin 28C17AF 8x20mm 28C17A DS11127E-page PDF