microcontroller atmega32
Abstract: stepper motor coil termination TMC249 TMC428 ATMEGA32 microcontroller programmer rs485 with atmega32 stepper motor controller SDA TMC428 atmel
Text: TMCM-111-56 56mm Stepper Motor Mechatronic Module Manual Version: 1.21 Oct 25th, 2006 Trinamic Motion Control GmbH & Co. KG Sternstraße 67 D - 20357 Hamburg, Germany Phone +49-40-51 48 06 - 0 FAX: +49-40-51 48 06 - 60 http://www.trinamic.com Copyright 2006, TRINAMIC Motion Control GmbH & Co. KG
|
Original
|
PDF
|
TMCM-111-56
TMCM-111-56
01-Mar-05
27-Jun-05
9-Jun-06
25-Oct-06
microcontroller atmega32
stepper motor coil termination
TMC249
TMC428
ATMEGA32 microcontroller programmer
rs485 with atmega32
stepper motor controller SDA
TMC428 atmel
|
IFC165PQ40
Abstract: pq40 PS-12 IFC165PS24 EN61000-3-3 EN61000-4-11 EN61000-4-3 EN61000-4-4 EN61000-4-5 IFC165
Text: AC-DC 165 Watts xppower.com IFC165 Series • Small Size - 3.0” x 5.0” x 1.25” • High Power Density • Active PFC Meets EN61000-3-2, -3 • Single, Dual, Triple & Quad Outputs • High Efficiency - up to 90% • Overvoltage and Overcurrent Protection
|
Original
|
PDF
|
IFC165
EN61000-3-2,
27-Jun-05
IFC165
IFC165PQ40
pq40
PS-12
IFC165PS24
EN61000-3-3
EN61000-4-11
EN61000-4-3
EN61000-4-4
EN61000-4-5
|
Untitled
Abstract: No abstract text available
Text: Models 12S, 14S, 15S, 17S, 18S Vishay Techno 1/4" [6.35 mm] Sq. Wirewound Trimmers FEATURES • • • • • • APPLICATIONS Wirewound trimmers are particularly useful in those applications where any combination of high power, low temperature coefficient of resistance and/or excellent long
|
Original
|
PDF
|
18-Jul-08
|
Si7405DN
Abstract: Si7405DN-T1
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.016 at VGS = – 4.5 V – 13 0.022 at VGS = – 2.5 V – 11 0.028 at VGS = – 1.8 V – 9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
PDF
|
Si7405DN
07-mm
Si7405DN-T1
18-Jul-08
|
Si7401DN
Abstract: Si7401DN-T1
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
PDF
|
Si7401DN
07-mm
Si7401DN-T1
18-Jul-08
|
Si7401DN
Abstract: Si7401DN-T1
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
PDF
|
Si7401DN
07-mm
Si7401DN-T1
08-Apr-05
|
Si7810DN
Abstract: Si7810DN-T1 si7810dn-t1-e3
Text: Si7810DN Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.062 at VGS = 10 V 5.4 0.084 at VGS = 6 V 4.6 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK® 1212-8 Package with Low
|
Original
|
PDF
|
Si7810DN
07-mm
Si7810DN-T1
08-Apr-05
si7810dn-t1-e3
|
Si7703EDN-T1
Abstract: MOSFET ESD Rated Si7703EDN
Text: Si7703EDN Vishay Siliconix New Product Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) – 20 rDS(on) (Ω) ID (A) 0.048 at VGS = – 4.5 V – 6.3 0.068 at VGS = – 2.5 V – 5.3 0.090 at VGS = – 1.8 V – 4.6
|
Original
|
PDF
|
Si7703EDN
07-mm
08-Apr-05
Si7703EDN-T1
MOSFET ESD Rated
|
Untitled
Abstract: No abstract text available
Text: Si7806DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.011 @ VGS = 10 V 14.4 0.0175 @ VGS = 4.5 V 12.6 • TrenchFET Power MOSFET • PWM Optimized Pb-free Available • New Low Thermal Resistance Power
|
Original
|
PDF
|
Si7806DN
07-mm
Si7806DN-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si7703EDN Vishay Siliconix New Product Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.048 @ VGS = –4.5 V –6.3 0.068 @ VGS = –2.5 V –5.3 0.090 @ VGS = –1.8 V –4.6 • TrenchFET Power MOSFETS: 1.8–V Rated
|
Original
|
PDF
|
Si7703EDN
07-mm
Si7703EDN-T1
S-51210
27-Jun-05
|
Untitled
Abstract: No abstract text available
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.016 @ VGS = –4.5 V –13 0.022 @ VGS = –2.5 V –11 0.028 @ VGS = –1.8 V –9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
PDF
|
Si7405DN
07-mm
Si7405DN-T1
08-Apr-05
|
Si7922DN
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.195 @ VGS = 10 V 25 0.230 @ VGS = 6 V 23 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package, 1/3 the Space of An SO-8 While
|
Original
|
PDF
|
Si7922DN
Si7922DN-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si7810DN Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.062 @ VGS = 10 V 5.4 0.084 @ VGS = 6 V 4.6 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK 1212-8 Package with Low 1.07-mm Profile
|
Original
|
PDF
|
Si7810DN
07-mm
Si7810DN-T1
S-51210
27-Jun-05
|
Untitled
Abstract: No abstract text available
Text: Si7810DN Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.062 @ VGS = 10 V 5.4 0.084 @ VGS = 6 V 4.6 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK 1212-8 Package with Low 1.07-mm Profile
|
Original
|
PDF
|
Si7810DN
07-mm
Si7810DN-T1
08-Apr-05
|
|
|
Untitled
Abstract: No abstract text available
Text: Si7634DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 40 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D 100% Rg Tested RoHS APPLICATIONS COMPLIANT D Notebook PC core
|
Original
|
PDF
|
Si7634DP
Si7634DP-T1--E3
51224--Rev.
27-Jun-05
|
Untitled
Abstract: No abstract text available
Text: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.063 at VGS = – 10 V – 5.1 0.110 at VGS = – 4.5 V – 3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
|
Original
|
PDF
|
Si7921DN
Si7921DN-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si7404DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.013 @ VGS = 10 V 13.3 0.015 @ VGS = 4.5 V 12.4 0.022 @ VGS = 2.5 V 10.2 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
|
Original
|
PDF
|
Si7404DN
07-mm
Si7404DN-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
|
Original
|
PDF
|
Si7401DN
07-mm
Si7401DN-T1
08-Apr-05
|
CISPR22
Abstract: EN61000-4-2 EN61000-4-3 EN61000-4-4 JPM160
Text: AC-DC 80-160 Watts xppower.com JPM Series • Low Cost • High Reliability • Power Factor Corrected • Suitable for Battery Charging Applications • Low Ripple & Noise • 125% Rating at 230 VAC • Optional Remote On/Off Specification Input General Input Voltage
|
Original
|
PDF
|
JPM80:
JPM120:
JPM160:
27-Jun-05
JPM160
CISPR22
EN61000-4-2
EN61000-4-3
EN61000-4-4
JPM160
|
15-V
Abstract: DG304B DG304BDJ DG306B DG306BDJ DG307B DG307BDJ 307B
Text: DG304B/306B/307B Vishay Siliconix CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Low Level Switching Circuits D Programmable Gain Amplifiers D Portable and Battery Powered Systems "15-V Input Range Fast Switching—tON: 110 ns Low rDS on : 30 W
|
Original
|
PDF
|
DG304B/306B/307B
DG304B,
DG306B
DG307B
08-Apr-05
15-V
DG304B
DG304BDJ
DG306BDJ
DG307BDJ
307B
|
Si7902EDN
Abstract: No abstract text available
Text: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 8.3 0.030 at VGS = 3.7 V 8.0 0.043 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
|
Original
|
PDF
|
Si7902EDN
07-mm
Si7902EDN-T1
S-51210
27-Jun-05
|
Si7922DN
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 25 0.230 at VGS = 6 V 23 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package, 1/3 the Space of An SO-8 While
|
Original
|
PDF
|
Si7922DN
Si7922DN-T1
08-Apr-05
|
Si7414DN
Abstract: Si7414DN-T1
Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK® 1212-8 Package with Low
|
Original
|
PDF
|
Si7414DN
07-mm
Si7414DN-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST GP 00 LTR DESCRIPTION RELEASED PER EC 0 S 1 3 - 0 2 0 7 - 0 5 DATE DWN APVD 2 7 JU N 0 5 sw JG D D 1 PARTS
|
OCR Scan
|
PDF
|
27JUN05
27JUN05
31MAR2000
|