Vishay DaTE CODE tsop-6
Abstract: si3410
Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3410DV
2002/95/EC
Si3410DV-T1-E3
Si3410DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
si3410
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PDF
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95xxx
Abstract: si3434 si3495
Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21
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Si3495DV
2002/95/EC
Si3495DV-T1-E3
Si3495DV-T1-GE3
95xxx
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
95xxx
si3434
si3495
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si3424CDV
2002/95/EC
Si3424CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si3433CD
Abstract: SI3433CDV-T1 Vishay DaTE CODE tsop-6 Si3433CDV
Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available
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Original
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Si3433CDV
Si3433CDV-T1-E3
Si3433CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Si3433CD
SI3433CDV-T1
Vishay DaTE CODE tsop-6
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Untitled
Abstract: No abstract text available
Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si3456DDV
2002/95/EC
Si3456DDV-T1-E3
Si3456DDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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dg468dv
Abstract: No abstract text available
Text: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10 maximum and flatness is 2 max over the specified analog signal range.
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Original
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DG467,
DG468
DG467
DG468
DG467/468
2011/65/EU
2002/95/EC.
2002/95/EC
dg468dv
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Untitled
Abstract: No abstract text available
Text: DG447, DG448 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG447, DG448 are dual supply single-pole/single-throw SPST switches. On resistance is 25 W maximum and flatness is 2.2 W max over the specified analog signal range.
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DG447,
DG448
DG448
DG477,
DG477
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET
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Si3879DV
2002/95/EC
Si3879DV-T1-E3
Si3879DV-T1l
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see
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Si3585CDV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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TSOP 173B
Abstract: No abstract text available
Text: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si3493BDV
2002/95/EC
Si3493BDV-T1-E3
Si3493BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP 173B
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PDF
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tsop6 package
Abstract: No abstract text available
Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si3483CDV
2002/95/EC
Si3483CDV-T1-E3
Si3483CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
tsop6 package
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus
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Original
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Si3853DV
2002/95/EC
Si3853DV-T1-E3
Si3853DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Original
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Si3424DV
2002/95/EC
Si3424DV-T1-E3
Si3424DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si3909DV
2002/95/EC
Si3909DV-T1-E3
Si3909DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si3447CDV
2002/95/EC
Si3447CDV-T1-E3
Si3447CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si3911
Abstract: SI3911DV
Text: Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.145 at VGS = - 4.5 V - 2.2 - 20 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si3911DV
2002/95/EC
Si3911DV-T1-E3
Si3911DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Si3911
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PDF
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si3430
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Original
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Si3430DV
2002/95/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3430
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3590DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21
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Original
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Si3590DV
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. G DIST R E V IS IO N S 50 LTR DESCRIPTION REV PER 0G3H— 0 0 5 5 — 04 DATE DWN APVD 27FEB04 JR MS D D ±.005 ,405 DIA. — o G
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27FEB04
L-300387
31MAR2000
20APR01
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 50 LTR DESCRIPTION REV PER 0G3H— 0 0 5 7 — 04 DATE DWN APVD 27FEB04 JR MS D D + .0 2 5 .925 + .0 2 5 1.565
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OCR Scan
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27FEB04
31MAR2000
20APR01
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 5 7 — 04 DWN 27FEB04 APVD JR MS D D + .02 5 + .02 5 — .585
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OCR Scan
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27FEB04
31MAR2000
20APR01
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 5 5 — 04 D DWN 27FEB04 APVD JR MS D TTTT CDLDR CDDED DRANGE
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OCR Scan
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27FEB04
31MAR2000
20APR01
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PDF
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L2-40387
Abstract: 40387
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST 50 R E V IS IO N S LTR DESCRIPTION DATE REV PER 0G3H— 0 0 5 5 — 04 DWN 27FEB04 APVD JR MS D D +.005 +.030 4,950 +.010
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OCR Scan
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27FEB04
L2-40387
31MAR2000
20APR01
40387
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PDF
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17PM
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3A— 0 0 5 7 — 04 DWN 27FEB04 APVD JR MS D D +.005 ,405 DIA, +.015 1,020
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OCR Scan
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27FEB04
548DIA,
31MAR2000
20APR01
17PM
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PDF
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