Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    27C010 UV Search Results

    27C010 UV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27C010-120DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-200DM/B Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-150DI Rochester Electronics LLC Rochester Manufactured 27C010, Memory (Eprom), 32 CDIP Package, Industrial Temp spec. Visit Rochester Electronics LLC Buy
    AM27C010-55DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-55JC Rochester Electronics AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics Buy

    27C010 UV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    Original     		WS27C010L 27C010 WS27C010L MIL-STD-883C PDF

    27C010L

    Abstract: 27C010L-12 ws27c010l-15dmb 27C010 WS27C010L WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi
    Text: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    Original     		WS27C010L 27C010 WS27C010L MIL-STD-883C 27C010L 27C010L-12 ws27c010l-15dmb WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi PDF

    FZL 141

    Abstract: FZL 141 S EPROM 27c010 fzl 131 27010 eprom 27C010
    Text: Philips Com ponents-Signetics D ocum ent No. ECN No. 27C010 1 MEG CMOS EPROM 128K x 8 Date o f Issue November 1990 S tatus Preliminary Specification Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Components-Signetics 27C010 CMOS EPROM is a 1,048,576-bit 5V


    OCR Scan     		27C010 27C010 576-bit 75msec FZL 141 FZL 141 S EPROM 27c010 fzl 131 27010 eprom PDF

    EPROM 27c010

    Abstract: M27C010 27C010Q
    Text: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM 27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM 27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized


    OCR Scan     		NM27C010 576-Bit 27C010 576-bit 128K-words 28-pin EPROM 27c010 M27C010 27C010Q PDF

    eprom 27c256 28 PIN DIP 120 NS

    Abstract: 27C020 27C040 27C080 27C256 27C512 NM27C010
    Text: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM 27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM 27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized


    OCR Scan     		NM27C010 576-Bit 576-bit 128K-words 28-pin eprom 27c256 28 PIN DIP 120 NS 27C020 27C040 27C080 27C256 27C512 PDF

    27C010L

    Abstract: WS27C010L 27C010 wsi WS27C010L-15DMB
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 120 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — 32 Pin CERDIP Package


    OCR Scan     		WS27C010L 128Kx 27C010 WS27C010L MIL-STD-883C 27C010L 27C010 wsi WS27C010L-15DMB PDF

    27C010L

    Abstract: 27010 eprom 27C010L-15 27C010L-20
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    OCR Scan     		WS27C010L 128Kx 27C010 S27C010L MIL-STD-883C 27C010L 27010 eprom 27C010L-15 27C010L-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 — 120 ns A ccess T im e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration


    OCR Scan     		WS27C010L 128Kx 27C010 -883C 010L-17C 010L-17D 010L-20D PDF

    intel 27C010

    Abstract: P27C010-200V10 27C010 27C010 uv 27C010-200V10 A12C LD27C010 p27c010-150v10 N27C010-200V10
    Text: in tei 27C010 1M 128K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinouts — 32-Pin DIP, 32-Pln PLCC — Simple Upgrade from Lower Densities ■ Complete Upgradfe Capability to Higher Densities ■ Versatile EPROM Features — CMOS and TTL Compatibility — Two Line Control


    OCR Scan     		27C010 32-Pin 27C010 576-bit, intel 27C010 P27C010-200V10 27C010 uv 27C010-200V10 A12C LD27C010 p27c010-150v10 N27C010-200V10 PDF

    smd JF

    Abstract: cllcc 542w
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    OCR Scan     		WS27C010L 128Kx 27C010 WS27C010L MIL-STD-883C smd JF cllcc 542w PDF

    i27c010

    Abstract: intel 5113 eprom
    Text: in te i 27C010 1M 128K x 8 CHMOS EPROM JEDEC Approved EPROM Pinouts -3 2 -P in DIP, 32-Pin PLCC — Simple Upgrade from Lower Densities Fast Programming — Qulck-Pulse ProgrammingTM Algorithm — Programming Time as Fast as 15 Seconds Complete Upgrade Capability to Higher


    OCR Scan     		27C010 32-Pin 576-bit, 27C010 i27c010 intel 5113 eprom PDF

    intel 27C010

    Abstract: 27C010-120V10 27C010-200V10 27C010 27C010-150V10 LD27C010 P27C010-150V10 27C0T0
    Text: intei 27C010 1M 128K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinouts — 32-Pin DIP, 32-Pln PLCC — Simple Upgrade from Lower Densities ■ Complete Upgradfe Capability to Higher Densities ■ Fast Programming — Qufck-Pulse Programming Algorithm — Programming Time as Fast as 15


    OCR Scan     		27C010 32-Pin 27C010 576-bit, intel 27C010 27C010-120V10 27C010-200V10 27C010-150V10 LD27C010 P27C010-150V10 27C0T0 PDF

    27c010-55

    Abstract: 27C512 128K 27C040 FM27C010 NM27C010 27C256 DIP Fairchild F8
    Text: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast


    OCR Scan     		FM27C010 576-Bit FM27C010 27c010-55 27C512 128K 27C040 NM27C010 27C256 DIP Fairchild F8 PDF

    27c010-55

    Abstract: Fairchild F8
    Text: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast


    OCR Scan     		FM27C010 576-Bit 27c010-55 Fairchild F8 PDF

    M27C010

    Abstract: AM27G Am27G010 AMD am2 socket pinout AMD socket AM2 pinout AMD am2 socket pinout VOLTAGE 27C010X socket AM2 pinout
    Text: a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing


    OCR Scan     		Am27C010 32-pin 10205F-9 27C010 KS000010 M27C010 AM27G Am27G010 AMD am2 socket pinout AMD socket AM2 pinout AMD am2 socket pinout VOLTAGE 27C010X socket AM2 pinout PDF

    27C010A

    Abstract: No abstract text available
    Text: CYPRESS CY27C010 ADVANCED INFORMATION 128K x 8 CMOS EPROM Features Functional Description • CMOS for optimum speed/power • High speed — tAA - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization


    OCR Scan     		CY27C010 32-pin 32-pin, 600-mil CY27C010 27C010A PDF

    QS5000

    Abstract: No abstract text available
    Text: R C H PRELIMINARY I I - P January 1998 S E M I C O N D U C T O R -n FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C 010 is a High Perform ance 128K x 8 UV Eras­ able EPROM . II is m anufactured using an advanced C M O S


    OCR Scan     		FM27C010 576-Bit QS5000 PDF

    EPROM 27c010

    Abstract: 27C010 equivalent CY27C010-150WC CY27C010
    Text: CY27C010 ADVANCED INFORMATION 128K x 8 CMOS EPROM Features Functional Description • CMOS for optimum speed/power • High speed — U a = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable In the


    OCR Scan     		CY27C010 32-pin 32-pin, 600-mil CY27C010 EPROM 27c010 27C010 equivalent CY27C010-150WC PDF

    27C020

    Abstract: 27C040 27C080 27C256 27C512 NM27C010 NM27C010Q
    Text: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read Only Memory. It is organized


    OCR Scan     		NM27C010 576-Bit NM27C010 576-bit 128K-words 28-pin 27C020 27C040 27C080 27C256 27C512 NM27C010Q PDF

    27C020

    Abstract: 27C040 27C080 27C256 27C512 NM27C010
    Text: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read Only Memory. It is organized


    OCR Scan     		NM27C010 576-Bit NM27C010 576-bit 128K-words 28-pin 27C020 27C040 27C080 27C256 27C512 PDF

    AM27CO10

    Abstract: AM27C010
    Text: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • — 90 ns Latch-up protected to 100 mA from -1 V to Vcc + 1 V Low pow er consum ption High noise im m unity Fast access tim e ■ ■ — 20 (iA typical CMOS standby current


    OCR Scan     		Am27C010 32-pin KS000010 10205D-10 AM27CO10 PDF

    Untitled

    Abstract: No abstract text available
    Text: F IN A L A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — Speed options as fast as 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing


    OCR Scan     		Am27C010 28-pin 32-pin 032--32-Pin 16-Q38FPO-5 AM27C010-45, 27C010 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to


    OCR Scan     		Am27C010 32-pin AM27C010-45, 27C010 PDF

    gy-27

    Abstract: 27C010 27C010-70 CY27C010 27C010-90 600-MIL ScansUX33
    Text: s ï«r W CYPRESS Features • CMOS for optimum speed/power • High speed — *AA = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization' • 100% reprogrammable in the windowed package • EPROM technology


    OCR Scan     		CY27C010 -32-pin 32-pin, 600-mil 32-pin gy-27 27C010 27C010-70 27C010-90 ScansUX33 PDF