KA3213
Abstract: KA32 KS5112 30A10 3A29
Text: DENSE-PAC 32 Megabit CMOS DRAM DPD2MX16M2H3 M I C R O S Y S T E M S PRELIMINARY DESCRIPTION: The DPD2MX16M2H3 "STA C K" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC stacked and leaded for
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DPD2MX16M2H3
DPD2MX16M2
32-Megabits
DPD2MX16M2H3
100ns
40-PIN
30A106-1S
275T415
0QQ137Ã
KA3213
KA32
KS5112
30A10
3A29
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32 pin eprom cdi
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 4 M EGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: T he D P Z 128X32V I/V IP is a 4 m egabit C M O S FLA SH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH m em ory devices. The D P Z 1 2 8 X 3 2 V I/V IP can be user
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DPZ128X32VI/DPZ128X32VIP
DPZ128X32VI/VIP
DPZ128X32VI/DPZ128X32VIP
250ns
120mA
120ns
150ns
170ns
200ns
32 pin eprom cdi
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 Megabit CMOS SRAM DPS128X32V3 M I C R O S Y S T E M S DESCRIPTION: The DPS128X32V3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic
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DPS128X32V3
DPS128X32V3
275T41S
0G012TB
3CW044-20
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 MEGABIT FLASH EEPROM M ICROSYSTEM S D P Z 1 2 8 X 3 2 V I/D P Z 1 2 8 X 3 2 V IP DESCRIPTION: The D P Z 128X32VI/VIP is a 4 megabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH
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128X32VI/VIP
DPZ128X32VI/VIP
250ns
120mA
400fiA
150ns
170ns
200ns
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Untitled
Abstract: No abstract text available
Text: DENSE PAC 4 Megabit High Speed CMOS SRAM DPS256X16Cn3/DPS256X16Bn3 MICROSYSTEMS DESCRIPTION: The DPS256X16Cn3/DPS256X16Bn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .
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DPS256X16Cn3/DPS256X16Bn3
DPS256X16Cn3/DPS256X16Bn3
50-pin
DPS256X16Cn3/DPS256X16Bn3STACK
California92841-1428
30A097-34
275T41S
D0D1742
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 8 MEGABIT FLASH EEPROM DPZ256X32IV3 M I C R O S Y S T E M S D E S C R IP T IO N : The D P Z 2 5 6 X 3 2 IV 3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadiess Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers
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DPZ256X32IV3
120ns
200ns
250ns
275T41S
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Untitled
Abstract: No abstract text available
Text: 16 Megabit High Speed CMOS SRAM D E N S E - P A C M I C R O S Y S T E MS DPS512X32MFn3 ADVANCED INFORMATION D E S C R IP T IO N : SLCC Stack T he DPS512X32M Fn3 High Speed SRA M " S T A C K " modules are a re vo lu tio n a ry n e w m em ory subsystem using D ense-Pac
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DPS512X32MFn3
DPS512X32MFn3
16-Megabits
500mV
California92841-1428
30A154-04
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 4 Megabit High Speed CM OS SRAM D P S 5 1 2 S8 B N DESCRIPTIO N: T he DPS512S8BN is a high speed m ilita ry 512K X 8 high-density, static RAM m od ule comprised o f four high speed ceram ic 128K X 8 m o n o lith ic SRAM's, an advanced high-speed CMOS decoder and de cou pling
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DPS512S8BN
DPS512S8BN
600-mil-wide,
32-pin
512Kx8
125-C
275T41S
30A034-12
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Supply Control LAF 0001
Abstract: laf 0001 power laf 0001 61YL RT1L 28X1 050I
Text: DENSE-PAC 2 M EGABIT FLASH EEPROM M I C R O S Y S T E M S DPZ128X161Y/l IY/IJY/l H Y/lA3 D ESCRIPTIO N : T he DPZ1 2 8 X 1 6 1Y/l IY/IJ Y/l H Y/l A3 d evice s are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers
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DPZ128X161
50-pin
DPZ128X1
120ns
150ns
170ns
200ns
250ns
3QA071-13
Supply Control LAF 0001
laf 0001 power
laf 0001
61YL
RT1L
28X1
050I
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S _ DPS512X8MKN3 PRELIMINARY D E S C R IP T IO N : The DPS512X8MKN3 High Speed SRAM "STAC K " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable
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DPS512X8MKN3
DPS512X8MKN3
600-mil-wide,
32-pin
30A129-11
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1431 T
Abstract: 56TAL
Text: DENSE-PAC 16 Megabit CM O S SRAM M I C R O S Y S T E M S D P S 5 1 2 X 3 2 M L /D P S 5 12 X 3 2 M W PR ELIM IN A R Y D ESCRIPTIO N : P IN -O U T DIAGRAM The DPS512X32M L/DPS512X 32M W is a 512K x 32 high density, high-speed Static Random Access M em ory SRAM module, intended
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DPS512X32ML/DPS512X32MW
DPS512X32ML/DPS512X32MW
72-Pin
30A148-00
D001fl3M
1431 T
56TAL
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30A10
Abstract: H1163
Text: DENSE-PAC 8 Megabit CMOS DRAM MICROSYSTEMS DPD512X16M2H3 PRELIMINARY D E S C R IP T IO N : The D PD 5 1 2X16M2H3 "S T A C K " module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC stacked and leaded for surface
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DPD512X16M2H3
DPD51
100ns
40-PiN
3QA108-13
DDD13S4
30A10
H1163
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30A10
Abstract: ME17 Dense-Pac Microsystems
Text: DENSE-PAC 16 Megabit CMOS DRAM MICROSYSTEMS DPD1MX16M2H3 PRELIMINARY D E S C R IP T IO N : T he D P D 1 M X 1 6 M 2 H 3 " S T A C K " m odule is a r e v o lu tio n a ry n e w m em o ry subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLC Q stacked and leaded for surface
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DPD1MX16M2H3
16-Megabits
DPD1MX16M2H3
512Kx8
110-C
100ris
40-PIN
30m08-14
30A10
ME17
Dense-Pac Microsystems
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Untitled
Abstract: No abstract text available
Text: 8 Megabit CMOS SRAM D E N S E - P A C MICROSYSTEMS DPS1MS8U D E S C R IP T IO N : The DPS1M S8U is a 1Meg X 8 high-density, low-power static RAM module comprised of eight 128K X 8 monolithic SRAM's, an advanced high-speed C M O S decoder and decoupling capacitors surface mounted
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1024K
150ns
100ns
120ns
36-PIN
California92841-1428
30A082-01
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