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    Fair-Rite Products Corp 2743019447

    FERRITE BEAD 53 OHM 2SMD 1LN
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    DigiKey 2743019447 Cut Tape 336,519 1
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    Central Technologies CT2743019447F

    FERRITE CHIP BEAD SMD
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    Fairchild Semiconductor Corporation 2743019447

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    FAIR-RITE PRODUCTS CORP 2743019447

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    Bristol Electronics 2743019447 6,223
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    Fair-Rite Products Corp 2743019447L

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    2743019447 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2743019447 Fair-Rite Products SM Bead; Current Rating:5A; Resistance:0.6mohm; Package/Case:SMD; Ferrite Grade:43; Frequency:100MHz; Impedance:47ohm; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Original PDF
    2743019447 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    2743019447 Freescale Semiconductor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    2743019447 Freescale Semiconductor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    2743019447 Fair-Rite Products Over 600 obsolete distributor catalogs now available on the Datasheet Archive - EMI, Shield Bead, 47 Scan PDF
    2743019447 Fair-Rite Products Inductor: Bead: 47: 100M Scan PDF
    2743019447H Fair-Rite Products Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Chip and EMI Beads Scan PDF

    2743019447 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2013-07-03 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2014-06-11 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original     		PDF

    2743019447 fair-rite

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2009-01-16 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Catalog 2743019447LF | Page 1 of 6 Products Catalog Part Search: Technical Abo 2643168351 Lower & Broadband Frequencies 1-300 MHz 31 material Broadband Frequencies 25-300 MHz (43 material) Part Number: 2643168351 Frequency Range: Broadband Frequencies 25-300 MHz (43 material)


    Original     		PDF 2743019447LF 2743019447LF

    2743019447

    Abstract: No abstract text available
    Text: Fair-Rite Products Corp. Catalog Page 1 of 3 Products Technical About Us Contact Us Catalog Part Search: Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz 43 & 44 materials Description: BDS2.9/3.1/4.7-43-1 43 SM BEAD Application:


    Original     		PDF

    2743019447

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2010-11-09 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original     		PDF

    AGR19045XF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 AGR19045XF

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    square d LC circuit breaker curves

    Abstract: MIC2590B MIC2590B-2BTQ MIC2590B-5BTQ
    Text: MIC2590B Dual-Slot PCI Hot Plug Controller General Description Features The MIC2590B is a power controller supporting power distribution requirements for Peripheral Component Interconnect PCI hot plug compliant systems incorporating the Intelligent Platform Management Interface (IPMI). The


    Original     		PDF MIC2590B MIC2590B M9999-091808 square d LC circuit breaker curves MIC2590B-2BTQ MIC2590B-5BTQ

    6603 Shenzhen

    Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
    Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    e140 transformer

    Abstract: transformer E166 e141 transformer toshiba e225 Transformer E140 Fairchild E212 ADP3330ART-3.3 E212 transistor AD10242 AD10465
    Text: a Dual Channel, 14-Bit, 65 MSPS A/D Converter with Analog Input Signal Conditioning AD10465 FEATURES Dual, 65 MSPS Minimum Sample Rate Channel-to-Channel Matching, ؎0.5% Gain Error Channel-to-Channel Isolation, >90 dB DC-Coupled Signal Conditioning Included


    Original     		PDF 14-Bit, AD10465 AD10465 C02356 68-Lead e140 transformer transformer E166 e141 transformer toshiba e225 Transformer E140 Fairchild E212 ADP3330ART-3.3 E212 transistor AD10242

    motorola MOSFET 935

    Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
    Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF184/D MRF184 MRF184S motorola MOSFET 935 XRF184 MRF184S 173 MHz RF CHIP

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    Z9 TRANSISTOR SMD

    Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
    Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    ICS5342

    Abstract: No abstract text available
    Text: ICS5342 GENDAC 16-Bit Integrated Clock-LUT-DAC General Description Features The ICS5342 GENDAC is a combination of dual programmable clock generators, a 256 x 18-bit RAM, and a triple 8-bit video DAC. The GENDAC supports 8-bit pseudo color applications, as well as 15-bit, 16-bit, and 24-bit True Color bypass


    Original     		PDF ICS5342 16-Bit ICS5342 18-bit 15-bit, 16-bit, 24-bit

    SD3932

    Abstract: pF CAPACITOR 100v 700B
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC


    Original     		PDF SD3932 2002/95/EC SD3932 250MHz. pF CAPACITOR 100v 700B

    pal22v10h

    Abstract: MM74HC245AWM 96F8740 PCC473BCTND MC68340 PM4314 PM4388 PM6344 PM7364 PM7375
    Text: PM4388 TOCTL PRELIMINARY INFORMATION REFERENCE DESIGN PMC-980942 ISSUE 1 CABGA TOCTL WITH FREEDM-32 REFERENCE DESIGN PM4388 CABGA TOCTL WITH FREEDM-32 REFERENCE DESIGN PRELIMINARY INFORMATION ISSUE 1: SEPT 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


    Original     		PDF PM4388 PMC-980942 FREEDM-32 PM4388 FREEDM-32 pal22v10h MM74HC245AWM 96F8740 PCC473BCTND MC68340 PM4314 PM6344 PM7364 PM7375

    2743037447

    Abstract: 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567
    Text: 49 15th E d itio n S M B e a d s D iffe re n tia l-M o d e Lower Frequencies < 50 MHz (73 material) Part Number Typical impedanceCi) 1 MHZ 5 MHz 10 MHz* 25 MHZ* Max Rdc<m-4 2773019447 12 25 31 40 OS 2773021447 25 50 60 78 12 2773037447 25 50 60 78 12 2773044447


    OCR Scan     		PDF 177uencies -74S3 2743037447 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567