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    2716 2K EPROM 24 PIN Search Results

    2716 2K EPROM 24 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097BH/BZA Rochester Electronics LLC Microcontroller, 16-Bit, EPROM, 12MHz, NMOS, CPGA68, CERAMIC, PGA-68 Visit Rochester Electronics LLC Buy
    MG8097BH Rochester Electronics LLC Microcontroller, 16-Bit, EPROM, 12MHz, HMOS, CPGA68, CERAMIC, PGA-68 Visit Rochester Electronics LLC Buy
    D2716 Rochester Electronics LLC EPROM Visit Rochester Electronics LLC Buy
    MC2716M/BJA Rochester Electronics LLC 2716M - 2Kx8 EPROM - Dual marked (7802201JA) Visit Rochester Electronics LLC Buy
    D2716-1 Rochester Electronics LLC 2716 - 2K X 8 EPROM Visit Rochester Electronics LLC Buy

    2716 2K EPROM 24 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2716 eprom

    Abstract: GR281 2716* eprom GR281, 2K x 8
    Text: GR281 Page 1 of 2 GR281 .23rd April 1999 DESCRIPTION The GR281 is a 2048 word by 8 bits 2K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The pin-out of the GR281 conforms to the JEDEC standards and is fully compatible with normal static RAM.The


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    GR281 GR281 com/gr281 2716 eprom 2716* eprom GR281, 2K x 8 PDF

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


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    GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116 PDF

    EEPROM 2816 CMOS

    Abstract: CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


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    DS1220Y 24-pin 720-mil DS1220Y-150 DS1220Y-150+ DS1220Y-200 DS1220Y-200+ DS1220Y-200IND DS1220Y-200IND+ EEPROM 2816 CMOS CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND PDF

    LEAPER-3

    Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
    Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.


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    PIC16C52/54/54A PIC16C55/56/57/57A/58A PIC12C508/509 PIC16C61 PIC16C620/621/622 PIC16C71/710 PIC16C62/63/64/65 PICC16C72/73/74/74A PIC16C83/84 PIC17C42/42A/43/44 LEAPER-3 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver PDF

    intel 2716

    Abstract: 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416
    Text: L M 6 4 P G 9 9 ,9 8 ,9 7 No. 1248 CHIPS FOR EVALUATING N MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LM6400 SERIES SYSTEM SA N Y O 1. General Description The LM64PG99/98/99 are system evaluation chips Intended for application development tools of 4-blt ilngle-chip


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    LM64PG99 LM6400 LM64PG99/98/99 LM04OO LM64O0 LM6402/05A, LM84PG98 LM6413E LMB4PG97 intel 2716 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416 PDF

    LC6502

    Abstract: LC6505C CSB400P LC6502B LC6500 2716 TI eprom LC6599 LC65PG99 KBR-400B eprom 2532
    Text: No. 1247 LC65PG99 I I CHIP FOR EVALUATING C MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LC6500 SERIES S AN VO 1. General Description The LC65PG99 is a simulation chip intended for use in evaluating C MOS 4-bit single-chip microcomputer LC6500 series. With a 24-pin socket for program EPROM provided on the package surface, it is designed to facilitate the develop­


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    LC65PG99 LC6500 24-pin 7T17Q7b 0D17t LCC5PG90 LC6502 LC6505C CSB400P LC6502B 2716 TI eprom LC6599 KBR-400B eprom 2532 PDF

    eprom 2716

    Abstract: 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time - 2 7 1 6 -1 : 350 ns Max - 2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


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    384-bit eprom 2716 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716 PDF

    ic 2716 eprom

    Abstract: ic 2716 pin diagram of ic 2716 2716 IC 27C12B 27C512V 2716 EPROM 24 PINS 2716 EPROM 2716 memory 2716
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 2716-1: 350 ns Max — 2716-2: 390 ns Max — 2716: 450 ns Max ■ Pin Compatible to Intel “Universal Site” EPROMs _ Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


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    384-bit ic 2716 eprom ic 2716 pin diagram of ic 2716 2716 IC 27C12B 27C512V 2716 EPROM 24 PINS 2716 EPROM 2716 memory 2716 PDF

    eprom 2716

    Abstract: 2716 eprom intel 2716 intel 2716 eprom 2716 2k eprom 2764AI 2716 memory 2716 2716 IC 2716 EPROM 24 PINS
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time -2 7 1 6 -1 : 350 ns Max -2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


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    384-bit eprom 2716 2716 eprom intel 2716 intel 2716 eprom 2716 2k eprom 2764AI 2716 memory 2716 2716 IC 2716 EPROM 24 PINS PDF

    2816 eeprom

    Abstract: eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716
    Text: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of externa! power 1 24 Aö 2 23 A5 3 22 A4 4 21 A3 5 20 A2 6 19 A1 7 18 A0 8 17 • Read and write access times as fast as 100 ns


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    DS1220Y 24-pin DS1220Y 2816 eeprom eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716 PDF

    2816 eeprom

    Abstract: IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
    Text: DS 1220AB/AD DALLAS DS1220AB/AD ^ s e m ic o n d u c to r FEATURES Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


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    1220AB/AD DS1220AB/AD 24-pin DS1220AD) DS1220AB) 2816 eeprom IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic PDF

    2316 rom

    Abstract: 2516 2k eprom 2316 8 bit rom memory rom 2316 2316 EPROM TA-350 ground eeprom 2716 2716 eeprom 27C58 ROM 2316
    Text: MV23SC16 _ ADVANCE INFORMATION P .M T K Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to


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    MV23SC16 MV23SC16 16384-bit 16364-bit 27C58) MV23SC16-012 2316 rom 2516 2k eprom 2316 8 bit rom memory rom 2316 2316 EPROM TA-350 ground eeprom 2716 2716 eeprom 27C58 ROM 2316 PDF

    GR2732

    Abstract: IC 2732 ROM 2764 GREENWICH INSTRUMENTS USA 2732 rom 4K GR2716 GR2764 ROM 2764 2732 eprom
    Text: G R E E N W IC H IN S T R U M E N T S LT» 4 tE 412477*4 0 0 0 0 0 0 4 D SYMBOL MIN -0.3 -0.3 -1 0 Vdd V i/0 Temp. MAX UNIT 7.0 Vdd + 0.3 + 60 Volts Volts deg. C OPERATING CONDITIONS SYMBOL Vdd Vin 1 V in ( 0 ) lin (any pin)* V o u tO ) ( lo u t = _ 1 V o u t( 0 ) ( lo u t


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    24-pin 28-pin GR2716/2732/2764 GR2716 GR2732 GR2732 IC 2732 ROM 2764 GREENWICH INSTRUMENTS USA 2732 rom 4K GR2716 GR2764 ROM 2764 2732 eprom PDF

    2316 rom

    Abstract: 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola
    Text: MV23SC16 _ ADVANCE INFORMATION C M O S Advance inform ation is issued to advise Customers of new additions to the Plessey Sem iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we would expect this performance data to


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    MV23SC16 MV23SC16 16384-bit 27C58) MV23SC16-012 2316 rom 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola PDF

    Intel 1702 eprom

    Abstract: intel 2708 eprom 2732 eprom 2716 2k eprom 24 pin 8080 processor intel 2758 eprom intel application note memory EPROM 2708 intel 2732 eprom intel 1702a eprom
    Text: intel APPLICATION NOTE A P -72 INTRODUCTION This A pplication N ote discusses how the Intel fam ily o f 5 volt EPROIV s can be used w ith m icroprocessor systems. T he pinout evolution and philosophy are explored in detail, which leads directly to system architecture. P a r­


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    PDF

    INTEL 2764

    Abstract: 27128 eprom EPROM intel 27256 intel 2764 eprom intel EPROM 27128 AR294 27256 27256 pin diagram 27256 prom INTEL 27256 EPROM
    Text: inter APPLICATION N O TE AP-154 A p ril 1983 v ÿ ' i ' .q ° *° IN TEL CORPORATION, 1983 4-1 APRIL 1983 ORDER NUMBER: 210970-003 AP-154 INTRODUCTION With the introduction of the 27256 32K byte EPROM, a new generation of high density componentized software is possi­


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    AP-154 INTEL 2764 27128 eprom EPROM intel 27256 intel 2764 eprom intel EPROM 27128 AR294 27256 27256 pin diagram 27256 prom INTEL 27256 EPROM PDF

    6716

    Abstract: ic 2716 eprom 2716 2k eprom HM-6716 2k x 8 EPROM harris QC02 eprom 2716 HM-6758 harris eprom harris hm-6716
    Text: HARRIS U li HM-6716 SEM ICO N D U CTO R P R O D U C T S DIVISION A DIVISION OF HARRIS CORPORATION 2K x 8 C M O S U V E P R O M Preview Pinout Features TO P V IE W SUPER LOW POW ER S T A N D B Y 5 0 0 /iW M A X . IN D U S T R Y S T A N D A R D P IN O U T 1


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    HM-6716 500/iW 50mW/MHz 350ns HM-6716 HM-6758, 6716 ic 2716 eprom 2716 2k eprom 2k x 8 EPROM harris QC02 eprom 2716 HM-6758 harris eprom harris hm-6716 PDF

    pin diagram of ic 2716

    Abstract: intel 2716 eprom
    Text: ER5716 ER5716IR ER5716HR G IN IR A I INS1 K liM l M PRELIMINARY INFORMATION 16K N-Channel Electrically Erasable and Programmable ROM FEATURES ELEC. ALTERABLE NON-VOLATILE MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ • ■ PIN C O N FIG UR A TIO N 2048 w ord x 8 bit organization, fu lly decoded


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    ER5716 ER5716IR ER5716HR 300ns 300mW HN48016 ER5716IR/HR A0-A10 ER5716 ER5716IR pin diagram of ic 2716 intel 2716 eprom PDF

    rom 2716

    Abstract: eprom 2716 memory 2716 2716 ROM intel 8085 2716s 2716 2716 eprom intel 2716 eprom 2716A
    Text: in te i 16K 2K X m 12716 8 UV ERASABLE PROM INDUSTRIAL Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse Fast Access Time: 450 ns Max • Industrial Grade Temperature Range: - 4 0 8C t o + 8 5 ° C ■ Single + 5V Power Supply


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    384-bit I2716operates rom 2716 eprom 2716 memory 2716 2716 ROM intel 8085 2716s 2716 2716 eprom intel 2716 eprom 2716A PDF

    LH0802

    Abstract: LH0803 Z803 Z8-02 Z8-01 Z8 MICROCOMPUTER FAMILY
    Text: SHARP ELEK/ MELEC »IV b? filfiOTTÖ D0QÜ17S 3 D T-49-19-05 Z-8 Family Microcomputers Z 8-01 * Z 8-02 • Z 8-03 LH0801 LH0802 LH0803 Z8-01 Single-Chip Microcomputer with 2K ROM Z8-02 Development Device with Memory Interface Z8-03 Prototyping Device with EPROM Interface


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    T-49-19-05 LH0801 LH0802 LH0803 Z8-01 Z8-02 Z8-03 144-byte LH0802 LH0803 Z803 Z8 MICROCOMPUTER FAMILY PDF

    2716A EPROM

    Abstract: 2716A eprom 2716a
    Text: SGS-THOMSON *7#. G NMOS 16K 2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525 mW Max ACTIVE POWER, 132 mW Max STANDBY POWER ■ ACC ESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS AND O U TPU TS TTL COMPATIBLE


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    M2716-1 350ns M2716 450ns VA30767 M2716 FDIP24W 2716A EPROM 2716A eprom 2716a PDF

    gr281

    Abstract: static ram 4802 pd446 4016 RAM
    Text: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible


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    24-pin GR281 static ram 4802 pd446 4016 RAM PDF

    ram 8416

    Abstract: No abstract text available
    Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


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    GR281-4 24-pin GR281 PD446 ram 8416 PDF

    M2716-1F1

    Abstract: M2716F1 SGS M2716 m27161f1 bull thomson M2716-F1 M2716 SGS ET2716Q DIP-24 ET2716
    Text: 7 e!EJ S 3_7_0D.2731.2_7 • S G S -T H O M S O N Ü L iÊ T O R D D Ê i _ ET2716 M 2716 3QZ * 16K 2K x 8 NMOS UV ERASABLE PROM S G S-THOMSON ■ 2048 x 8 ORGANIZATION ■ 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER ■ LOW POWER DURING PROGRAMMING


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    ET2716 M2716 M/ET2716-1, 350ns; M/ET2716, 450ns M/ET2716 packag85Â DIP-24 M2716-1F1 M2716F1 SGS M2716 m27161f1 bull thomson M2716-F1 M2716 SGS ET2716Q DIP-24 ET2716 PDF