Untitled
Abstract: No abstract text available
Text: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458B – DECEMBER 2008 – REVISED MAY 2009
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THS4521
THS4522
THS4524
SBOS458B
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M29W800FT
Abstract: No abstract text available
Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns, 90 ns (only available
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M29W800FT
M29W400FT
M29W800FB
M29W400FB
64-bit
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NAND512R3A2D
Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512R3A2D
NAND512W3A2D
NAND512W3A2
NI3087
t 0433 transistor
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13.56 MHz spiral antenna
Abstract: 7405-901 RFID loop antenna design reader 13.56 MHz iso 10373-7 loop HF RFID loop antenna design matching RFID loop antenna 13.56 AN2972 RFID reader passive RFID loop antenna how to design 13.56 MHz RFID tag
Text: AN2972 Application note Designing an antenna for the M24LR64-R dual interface I²C/RFID device Introduction The M24LR64-R device is an EEPROM designed for access via two different interfaces: a wired I2C interface and a standard contactless ISO 15693 RFID interface.
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AN2972
M24LR64-R
13.56 MHz spiral antenna
7405-901
RFID loop antenna design reader 13.56 MHz
iso 10373-7 loop
HF RFID loop antenna design
matching RFID loop antenna 13.56
AN2972
RFID reader passive
RFID loop antenna
how to design 13.56 MHz RFID tag
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AN2810
Abstract: LED7707 BAS69 LED7706 STPS1L40M UMK325BJ106KM-T
Text: AN2810 Application note 6-row 85 mA LED driver with boost converter for LCD panel backlighting Introduction The LED7707 LED driver from STMicroelectronics consists of a high-efficiency monolithic boost converter and six controlled current generators rows , specifically designed to supply
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AN2810
LED7707
AN2810
BAS69
LED7706
STPS1L40M
UMK325BJ106KM-T
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AN2639
Abstract: top-side marking STMicroelectronics LQFP SM817 TOPSIDE MARKING PDIP STMicroelectronics AN2034 J-STD-020D J-STD-020d.1 disadvantages of microcontroller JESD22A111 VFQFPN thermal resistance
Text: AN2639 Application note Soldering recommendations and package information for Lead-free ECOPACK microcontrollers Introduction STMicroelectronics microcontrollers support various types of Lead-free ECOPACK® package to meet customer requirements. The mounting technologies are Surface mount technology SMT , and Through hole
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AN2639
AN2639
top-side marking STMicroelectronics LQFP
SM817
TOPSIDE MARKING PDIP STMicroelectronics
AN2034
J-STD-020D
J-STD-020d.1
disadvantages of microcontroller
JESD22A111
VFQFPN thermal resistance
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TH4521
Abstract: ths4522 ADS1278 OPA2350 THS4121 THS4130 THS4520 THS4521 THS4521D THS4524IDBT
Text: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458B – DECEMBER 2008 – REVISED MAY 2009
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THS4521
THS4522
THS4524
SBOS458B
TH4521
ths4522
ADS1278
OPA2350
THS4121
THS4130
THS4520
THS4521
THS4521D
THS4524IDBT
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13003n
Abstract: ST13003N FLUORESCENT LAMPS CFLS ibm rev.1.5 13003
Text: ST13003N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 ■ 2 1 Compact fluorescent lamps CFLs
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ST13003N
OT-32
13003N
13003n
ST13003N
FLUORESCENT LAMPS CFLS
ibm rev.1.5
13003
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VFQFPN-40
Abstract: f 71875 resistor 240 BAT54C VR11 VRD11 L6706 6x6mm
Text: L6706 VR11.1 single phase controller with integrated driver Features • 8-bit programmable output up to 1.60000 V Intel VR11.1 DAC ■ High current embedded driver ■ High output voltage accuracy ■ Programmable droop function ■ Imon output ■ Load transient boost LTB Technology to
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L6706
VFQFPN-40
f 71875
resistor 240
BAT54C
VR11
VRD11
L6706
6x6mm
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X0619
Abstract: X00619MA MARKING CODE CGK X006
Text: X00619 0.8 A sensitive gate SCR Features • IT RMS = 0.8 A ■ VDRM / VRRM = 600 V ■ IGT = 30 to 200 µA A G K Applications ■ Limited gate current topologies ■ Ground fault circuit interrupters ■ Overvoltage crowbar protection in power supplies ■
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X00619
X00619-MA)
X0619
X00619MA
MARKING CODE CGK
X006
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STD815CP40
Abstract: D815C D815CP40 transistor 48
Text: STD815CP40 Complementary transistor pair in a single package Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description
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STD815CP40
STD815CP40
D815C
D815CP40
transistor 48
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NAND512W3A2D
Abstract: NAND512R3A2D
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512W3A2D
NAND512R3A2D
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AEC-Q101-REV-C
Abstract: J-STD-020D 67-21-R7SC-T1R1S1B7E-2T8-AM
Text: EVERLIGHT ELECTRONICS CO., LTD. Technical Data Sheet Top View LEDs 67-21-R7SC-T1R1S1B7E-2T8-AM Feature ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ RoHS compliant. P-LCC-2 package. Colorless clear resin. Wide viewing angle 120o. Inner reflector and white package. Brightness: 112 to 224 mcd at 20mA.
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67-21-R7SC-T1R1S1B7E-2T8-AM
AEC-Q101
DSE-0001653
26-May-2009
AEC-Q101-REV-C
J-STD-020D
67-21-R7SC-T1R1S1B7E-2T8-AM
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TPD4S009DBVR
Abstract: TPD4S010DQAR TPDS4010 TPD4S009 TPD4S009DGSR TPD4S009DRYR TPD4S010
Text: TPD4S009 TPD4S010 www.ti.com. SLVS817C – MAY 2008 – REVISED MAY 2009 4-CHANNEL ESD SOLUTION FOR HIGH-SPEED DIFFERENTIAL INTERFACE
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TPD4S009
TPD4S010
SLVS817C
TPD4S009
TPD4S009DBVR
TPD4S010DQAR
TPDS4010
TPD4S009DGSR
TPD4S009DRYR
TPD4S010
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Untitled
Abstract: No abstract text available
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
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t 0433 transistor
Abstract: NAND512R3A2D
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
t 0433 transistor
NAND512R3A2D
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7637-2
Abstract: PowerSSO-24 VND5012AK-E VND5012AKTR-E CDM-AEC-Q100-011 ISO7637
Text: VND5012AK-E Double channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 36 V Max on-state resistance per ch. RON 12 mΩ Current limitation (typ) ILIMH 60 A
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VND5012AK-E
2002/95/EC
7637-2
PowerSSO-24
VND5012AK-E
VND5012AKTR-E
CDM-AEC-Q100-011
ISO7637
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13003 TRANSISTOR
Abstract: st 13003 TRANSISTOR npn 13003N transistor 13003 13003 TRANSISTOR npn 13003 application notes ST13003N ST13003 transistor 13003 A 13003 power transistor
Text: ST13003N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Compact fluorescent lamps CFLs 1 Description 3 SOT-32 The device is manufactured using high voltage
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ST13003N
OT-32
13003N
13003 TRANSISTOR
st 13003 TRANSISTOR npn
13003N
transistor 13003
13003 TRANSISTOR npn
13003 application notes
ST13003N
ST13003 transistor
13003 A
13003 power transistor
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Untitled
Abstract: No abstract text available
Text: STD815CP40 Complementary transistor pair in a single package Datasheet — production data Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains
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STD815CP40
STD815CP40
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X00619MA5AL2
Abstract: No abstract text available
Text: X00619 0.8 A sensitive gate SCR Datasheet − production data Features • IT RMS = 0.8 A ■ VDRM, VRRM = 600 V ■ IGT = 30 to 200 µA A G K Applications A ■ Limited gate current topologies ■ Ground fault circuit interrupters ■ Overvoltage crowbar protection in power
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X00619
X00619-MA
OT-223
X00619MN
X00619MA5AL2
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d815cp40
Abstract: STD815CP40 DIP8 STMicroelectronics marking code st DIP8 marking code D815C
Text: STD815CP40 Complementary transistor pair in a single package Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Applications ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description
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STD815CP40
STD815CP40
d815cp40
DIP8 STMicroelectronics marking code
st DIP8 marking code
D815C
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC 00 ES R 1G H T S R E S E RV E D. R E V 1S I O N S DIST P LTR DESCRIPTION 30 C O N T A C T HOUSI NG
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09APR2009
26MAY2009
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATIO N R 1G H T S 20 L OC RESERVED. DIST R E V I SIONS 00 GP LTR DESCRIPTIO N PRELIMINARY PER REVISED EC PER EC DATE OS I 3 - 0 0 8 3 - 0 5 OS I 3 - 0 3 0 8 - 0 5
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27JAN05
22DEC05
26MAY2009
3IMAR2000
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Untitled
Abstract: No abstract text available
Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R - B Y TYCO E LE C TR O N IC S 5 3 4 2 P U B L IC A T IO N A L L INTERNATIO NAL RIGHTS C O P Y R IG H T 6 LOC D IS T R E V IS IO N S GP 00 RESERVED. C O R P O R A TIO N . LTR D E S C R IP T IO N
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