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    125OC

    Abstract: IMM1481-70BSC 2640mW
    Text: INNOVATIVE IMM1481 2M X 8 SRAM Module Features • 4.5V - 5.5V Operation • CMOS for optimum speed/power • Low active power —2640mW max. • Low standby power (Commercial L version) —11.0mW (max.) • Automatic power-down when deselected • Easy memory expansion with CE and OE options.


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    IMM1481 --2640mW IMM1481 IMM1481-70BSC IMM1481-100BSC 36-Pin 125OC IMM1481-70BSC 2640mW PDF

    MB81C1000

    Abstract: No abstract text available
    Text: May 1990 FUJITSU IPRODUCT PROFILE: MB85260 - 80/ - 10/-12 CMOS 1M X 8 LOW PROFILE DRAM MODULE The Fujitsu MB85260 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000 devices. The MB85260 is optimized for those applications requiring high speed, high


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    MB85260 MB81C1000 30-pin MSP-30P-P06 3080mW PDF

    Untitled

    Abstract: No abstract text available
    Text: OKI semiconductor MSC23B136B-xxBS4/DS4 1,048,576 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE_ GENERAL DESCRIPTION The Oki MSC23B136B-xxBS4/DS4 is a fully decoded, 1,048,576 word X 36 bit CMOS dynamic random access memory composed of two 16Mb 1Mx16 DRAMs and two 2Mb{1 Mx2) DRAMs in SOJ.


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    MSC23B136B-xxBS4/DS4 MSC23B136B-xxBS4/DS4 1Mx16) 72-pin MSC23B136B-xxBS4 MSC23B136B-xxDS4 compati------DQ20 ------DQ23 ------DQ24 PDF

    THM81000AS

    Abstract: TC511000AJ TC511000A
    Text: TOSHIBA MOS MEMORY PRODUCTS THM81000AS/AL-70, 80,10 THM81020AL-70, 80, 10 DESCRIPTION; The THM81000AS is 8 pcs of TC511000AJ on The THM81000AS is high density and large memory systems, and to a 1,048,576 words by 8 bits dynamic RAM module which assembled the printed circuit board.


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    THM81000AS/AL-70, THM81020AL-70, THM81000AS TC511000AJ THM81000AS/A THM81020AL 100ns 150ns 130ns TC511000A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is {DRAM MODULE M H 2 M 3 2 C L J -5 ,-6 ,-7 / M H 2 M 3 2 C N L J -5 ,-6 ,-7 FAST PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Slngl* side] The MH2M32CLJ/CNLJ is a 2097152-word x 32-bit dynamic


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    67108864-BIT 2097152-WORD 32-BIT) MH2M32CLJ/CNLJ 32-bit DD3Q450 PDF

    136B

    Abstract: MSC23B136B-60BS4
    Text: OKI semiconductor MSC23B136B-xxBS4/DS4 1,048,576 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE_ GENERAL DESCRIPTION The Oki MSC23B136B-xxBS4/DS4 is a fully decoded, 1,048,576 word X 36 bit CMOS dynamic random access memory composed of two 16Mb 1Mx16 DRAMs and two 2Mb(1 Mx2) DRAMs in SOJ.


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    MSC23B136B-xxBS4/DS4 SC23B136B-xxBS4/DS4 1Mx16) 72-pin MSC23B136B-xxBS4 MSC23B136B-xxDS4 -DQ23 -DQ24 -DQ25 136B MSC23B136B-60BS4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is <DRAM MODULE MH2M32CLJ-5,-6,-7/ MH2M32CNLJ-5,-6,-7 FAST PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The MH2M32CLJ/CNLJ is a 2097152-word x 32-bit dynamic RAM and consists of 4 industry standard 2M x 8 dynamic


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    MH2M32CLJ-5 MH2M32CNLJ-5 67108864-BIT 2097152-WORD 32-BIT) MH2M32CLJ/CNLJ 32-bit 5M417800CJ MH2M32CLJ/CNLJ-6tRAS PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1990 FUJITSU IP R O D U C T p r o f i l e : MB 85260A -60/-70/-80/-10 CMOS 1M x 8 LO W PROFILE DRAM MODULE The Fujitsu MB85260A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000A devices. The MB85260A is optimized for those applications requiring high speed, high


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    5260A MB85260A MB81C1000A 30-pin MSP-30P-P06 2860mW PDF