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    263AB Search Results

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    263AB Price and Stock

    Vishay Semiconductors VO1263AB

    OPTOISO 5.3KV 2CH PHVOLT 8DIP
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    DigiKey VO1263AB Tube 1,618 1
    • 1 $4.88
    • 10 $4.88
    • 100 $4.88
    • 1000 $2.19595
    • 10000 $2.11868
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    Analog Devices Inc DC2263A-B

    EVAL BOARD FOR LTC3887EUJ
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    DigiKey DC2263A-B Box 1 1
    • 1 $294.25
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    Mouser Electronics DC2263A-B
    • 1 $295.55
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    Analog Devices Inc DC2263A-B 20
    • 1 $287.03
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    Richardson RFPD DC2263A-B 1
    • 1 $282.48
    • 10 $282.48
    • 100 $282.48
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    Siemens 3RT29263AB31

    MECHANICAL LATCH FOR 3RT2 S0 AC/
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    DigiKey 3RT29263AB31 Bulk 1 1
    • 1 $155.05
    • 10 $135.439
    • 100 $123.223
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    Mouser Electronics 3RT29263AB31 3
    • 1 $152.43
    • 10 $135.43
    • 100 $123.22
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    RS 3RT29263AB31 Bulk 1 5 Weeks 1
    • 1 $158.15
    • 10 $150.24
    • 100 $126.52
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    Maxim Integrated Products VT263ABEVKIT-

    EVAL BOARD FOR VT263AB
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    DigiKey VT263ABEVKIT- Box
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    JRH Electronics G9263AB1805KNF

    CONN
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    DigiKey G9263AB1805KNF Bulk 1
    • 1 $1258.45
    • 10 $1258.45
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    Find more 263AB price and stock on Findchips.com

    263AB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GIB2401 thru GIB2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-263AB • Ultrafast recovery time K • Low switching losses, high efficiency • High forward surge capability


    Original     		GIB2401 GIB2404 O-263AB J-STD-020, 2002/95/EC 2002/96/EC J-STD-002 2011/65/EU 2002/95/EC. PDF

    FT1614

    Abstract: No abstract text available
    Text: FT16.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 16 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-263AB D2PAK FEATURES • Glass/passivated die junctions • Medium current Triac • Low thermal resistance • Ideal for automated placement


    Original     		O-263AB 2011/65/EU 2002/96/EC J-STD-020, ft16ghc Oct-13 FT1614 PDF

    JESD22-B102

    Abstract: J-STD-002 U20xCT 89017
    Text: New Product U B 20BCT thru U(B)20DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction TO-263AB TO-220AB • Ultrafast recovery time K • Soft recovery characteristics • Low switching losses, high efficiency


    Original     		20BCT 20DCT O-263AB O-220AB U20xCT J-STD-020, O-263AB UB20xCT O-220AB 2002/95/EC JESD22-B102 J-STD-002 U20xCT 89017 PDF

    75631P

    Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
    Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE


    Original     		HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 75631P AN9321 HUFA75631P3 HUFA75631S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1. Gate 2. Source 3. Drain 0.037 (0.95) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125)


    Original     		2N7002 O-263AB OT-23) OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEPB16AT thru FEPB16JT Dual Ultrafast Plastic Rectifier Reverse Voltage 50 to 600V Forward Current 16A TO-263AB 0.411 10.45 0.190 (4.83) 0.380 (9.65) 0.160 (4.06) Mounting Pad Layout 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN Dimensions in inches and (millimeters)


    Original     		FEPB16AT FEPB16JT O-263AB 0V-400V 00V-1000V 0-400V 00-400V 00-600V 50mVp-p PDF

    Untitled

    Abstract: No abstract text available
    Text: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N ct E ET u R d T NF ro P New GE TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. S D Mounting Pad Layout 0.320 (8.13)


    Original     		GFB50N03 O-263AB O-263 PDF

    2n4403

    Abstract: No abstract text available
    Text: MMBT4403 Small Signal Transistor PNP t c u rod P New TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original     		MMBT4403 O-263AB OT-23) OT-23 E8/10K 2n4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: VBT1545CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses


    Original     		VBT1545CBP-E3 O-263AB J-STD-020, VBT1545CBP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VBT6045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses


    Original     		VBT6045C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 16H35 thru MBR(F,B)16H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES ITO-220AC 2 2 1 1 MBR16Hxx MBRF16Hxx PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB


    Original     		16H35 16H60 O-220AC ITO-220AC MBR16Hxx MBRF16Hxx O-263AB J-STD-020, O-263AB 22-B106 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 TO-263AB D2PAK 1 Cathode


    Original     		VS-16TTS. J-STD-020, JEDEC-JESD47 O-263AB VS-16electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: VB60100C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses TO-263AB • High efficiency operation


    Original     		VB60100C-M3 O-263AB J-STD-020, VB60100C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VBT2045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses


    Original     		VBT2045C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: VB20120SG-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses TO-263AB • High efficiency operation


    Original     		VB20120SG-M3 O-263AB J-STD-020, VB20120SG 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VBT2060C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VBT2060C-M3 O-263AB J-STD-020, VBT2060C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    76423P

    Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
    Text: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S


    Original     		HUFA76423P3, HUFA76423S3S O-220AB O-263AB HUFA76423P3 76423P 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13 PDF

    76633s

    Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
    Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S


    Original     		HUF76633P3, HUF76633S3S O-220AB O-263AB HUF76633P3 76633s 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407 PDF

    76443P

    Abstract: AN7254 AN9321 AN9322 HUF76443P3 HUF76443S3S HUF76443S3ST TB334
    Text: HUF76443P3, HUF76443S3S Data Sheet October 1999 File Number 4784 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76443P3 HUF76443S3S


    Original     		HUF76443P3, HUF76443S3S O-220AB O-263AB HUF76443P3 76443P AN7254 AN9321 AN9322 HUF76443P3 HUF76443S3S HUF76443S3ST TB334 PDF

    D2Pak Package dimensions

    Abstract: D2Pak Package TO-263AB weight D2PAK TO-263AB D2-PAK package
    Text: TO-263AB/D2PAK Package Dimensions TO-263AB/D2PAK FS PKG Code 45 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 2000 Fairchild Semiconductor International August 1998, Rev. A


    Original     		O-263AB/D2PAK O-263AB/D2PAK D2Pak Package dimensions D2Pak Package TO-263AB weight D2PAK TO-263AB D2-PAK package PDF

    RFP70N06

    Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω


    Original     		RFG70N06, RFP70N06, RF1S70N06SM TA49007. O-247 O-220AB O-263AB 175oC TB334 RFP70N06 RFP70N06 AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334 PDF

    75631p

    Abstract: 75631 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
    Text: HUF75631P3, HUF75631S3ST Data Sheet August 2000 File Number 4720.3 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features


    Original     		HUF75631P3, HUF75631S3ST O-220AB O-263AB HUF75631P3 75631P 75631p 75631 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334 PDF

    HUF75939P3

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75939S3ST TB334
    Text: HUF75939P3, HUF75939S3ST Data Sheet December 2000 File Number 5008 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		HUF75939P3, HUF75939S3ST O-220AB O-263AB HUF75939P3 75939P HUF75939P3 AN7254 AN7260 AN9321 AN9322 HUF75939S3ST TB334 PDF

    76439S

    Abstract: HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334
    Text: HUFA76439P3, HUFA76439S3S Data Sheet January 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76439P3 HUFA76439S3S • Ultra Low On-Resistance


    Original     		HUFA76439P3, HUFA76439S3S O-220AB O-263AB HUFA76439P3 O-220opment. 76439S HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334 PDF