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    igus Inc 26-17-175-0

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    Enclosures for Industrial Automation ICS25-TL122X12-7035 US118
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    261717 Datasheets Context Search

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    sgm 8905

    Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
    Text: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.


    Original     		PDF \FR\FM\21DED1 pfrm02 21DED1 sgm 8905 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


    OCR Scan     		PDF 2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236

    SK FN 521

    Abstract: 2SA1897 T-100 paps7k V/SK FN 521
    Text: 5ë'fr%-R H u ttifa fp 0|D July 1993 M 1 "sj O *vj m *□ V; w> -* ít Si' ü 1 V >4 v> di V' ü A Si % Vf m 111 V m lin üsf 8$ St * fr H (Q .H •n ~ü H H m Vf Vi- m Püf V. m üf Vi o" Ttr D 1 5o o H s: o" o o H o 11 ro Ül H °Il en H o II IIA N) ^ en


    OCR Scan     		PDF 2SA1897 2SAI897itmrniitH IEI-620) SK FN 521 2SA1897 T-100 paps7k V/SK FN 521

    2sk82

    Abstract: ifoc 2SK823 JI 32
    Text: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .


    OCR Scan     		PDF 2SK823 2sk82 ifoc 2SK823 JI 32

    uPD71084

    Abstract: FZ 300 R 06 KL UPD71084G D71084 UPD71084C V30TM P18C PD70116 PD71084 IC-6390A
    Text: NEC Ì i f / \ M O S In te g ra te d C irc u it f 7 / ¿¿ P D 7 1 0 8 4 ÌÌ, X fc ^ n ¿ P < y D 7 >y 1 ? • s* VX 8 4 •x x ^ v — 9 / \- y 4 ' < T t o n m OC M O S 7 ° n -feX O ^ P D 7 0 1 0 8 « lJ^ j^ V 2 0 ), o % m m t W T L i r ? 7 O ux ? ;m


    OCR Scan     		PDF TS484 raTg14 uPD71084 FZ 300 R 06 KL UPD71084G D71084 UPD71084C V30TM P18C PD70116 PD71084 IC-6390A

    2SK2133

    Abstract: 2SK2133-Z MP-25 MP-25Z CMT-10
    Text: zr— 'i? NEC ^ • £ /— h M O S ^ -^ 5 e j!j^ /\0r7 - M O S FET M O S Field E ffect P o w e r T ran sistors 2SK2133, 2SK2133-Z N ^ Ÿ T W U /x V -M O S f e t i t f f l 2SK 2133, 2 S K 2 1 3 3 -Z l i N i t :Ê . 7 , < i 7 - MOS FET T 't T * ' U ¡Ü IS


    OCR Scan     		PDF 2SK2133, 2SK2133-Z 2SK2133-Z 2SK2133 IEI-620) MP-25 O-220AB) MP-25Z 2SK2133 MP-25 MP-25Z CMT-10

    TC-7606

    Abstract: 2SK1283
    Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to


    OCR Scan     		PDF 2SK1283 2SK1283 TC-7606

    ac05d

    Abstract: AC05DJM AC05DJM-Z AC05FJM AC05FJM-Z AC05F
    Text: • 5 /— h NEC A C 0 5 r jJ M , 400 V, A C 05D J M , A C 0 5 D J M -Z A C 0 5 F J M , A C 0 5 F J M -Z r 5 A A C 05r jJM -Z i i , m b * TRIAC 5 A K TRIAC T , m O il L t ° - ? t 600 V V t o # m o W / ' J v K I C iz M M ù ^ m m W o — h h 'J y <, o É A C 05r jJM -Z


    OCR Scan     		PDF rAC05DJM, AC05DJM-Z AC05FJM, AC05FJM-Z AC05r UL94V-0) OEi-620) AC05DJM, ac05d AC05DJM AC05FJM AC05FJM-Z AC05F

    D17012GF

    Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
    Text: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if


    OCR Scan     		PDF //PD17012GF-011 200MHz7Â TFM18j^ D17012GF 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G

    vlt 2900

    Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
    Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „


    OCR Scan     		PDF uPD78P334 78P334 78334C PD78334 32768X8 J2T43Bt\ 24-i- vlt 2900 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334

    2SJ197

    Abstract: No abstract text available
    Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


    OCR Scan     		PDF 2SJ197 2SJ197 O2SK1483

    2SJ328

    Abstract: 2SJ328-Z J0502
    Text: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,


    OCR Scan     		PDF 2SJ328 2SJ328-Z 2SJ328ttP? bT2SJ3291f IEI-620) 2SJ328 2SJ328-Z J0502

    e5es

    Abstract: IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7
    Text: r M OS Integrated Circuit /¿PD17P402 * t i t ^ m 4 fcf'y N • •v - f ? □ = ] > h P - 7 /¿PD17P402 i, /¿PD17402£>P^VX?ROM £, 7 > • £ < A P R O M T 'B £ & tL* I«K i T T o fi P D17P402 « , 7 P 7 A 0 W # Jt £ / jP D 1 7 P 4 0 2 C 7 3 ^ ^ t4 (fc jg fc S ftftif) l i ,


    OCR Scan     		PDF uPD17P402 PD17402£ D17P402 D17402 16K/W 8192X16 PD17P402GC-3B9 U10427JJ1VQDS00 PP17P402 e5es IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7

    TRANSISTOR si 6822

    Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
    Text: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to


    OCR Scan     		PDF uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822

    IC-8857

    Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
    Text: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o


    OCR Scan     		PDF uPA674T IEI-620) ETS14 IC-8857 fbise t460 transistor bth 200 63445-5

    TC7988

    Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
    Text: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y


    OCR Scan     		PDF 2SK2158 2SK2158Ià 73pDpà IEI-620) 1-N00 TC7988 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q

    2SD1000

    Abstract: IC HE 4011 2SB799 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor
    Text: ?— S • Ss— H Silicon T ra n s is to r 2SD1000 o - t — r 'A * T > m m m i •mm - 7 °m < T ) K 7 4 2 S B 7 9 9 ¿ 3 yy°') ? 'jr f È f f l e '# ti~0 O/J'A^’C P t ^ '^ ^ ^ > ¡ftiiŒ T 'i) < 5o 1.5+0.1 p m = 2 .0 m w ± 0 .7 mmX Il 3 U 7 y W 3


    OCR Scan     		PDF 2SD1000 2SB799 OT-89) PWS10 cycleS50 2SD1000 IC HE 4011 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor

    TC-8008

    Abstract: 2SJ355 xz43
    Text: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)


    OCR Scan     		PDF 2SJ355 2sj355tip51-p^ iei-620) TC-8008 2SJ355 xz43

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


    OCR Scan     		PDF 2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717

    fcf - 4 94v - 0 _ 1

    Abstract: FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083
    Text: i. I I ÎK I M E C Y ^ MOS M O S # [l]fê In te g r a te d C ir c u it /¿ P D 1 7 1 3 4 B ,1 7 1 3 6 B '¡ 'm 4 fcÎ 7 h • u m 'y y 0 * h P - 7 ¿¿PD17134B, 17136BÌÌ, 8 fcT'y h A/D 3 >/<— $ 4 ^ * ; u , ? < (3 ^ + * ; u ) , A C - t z P ^ P ^ f è


    OCR Scan     		PDF uPD17134B uPD17136B //PD17134 fcf - 4 94v - 0 _ 1 FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083

    ic SE 135

    Abstract: 00jT K49H
    Text: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •


    OCR Scan     		PDF PWS10 CycleS50 ic SE 135 00jT K49H

    2sk1150

    Abstract: b 772 my1 PS7K 2SK 1411 t8506
    Text: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .


    OCR Scan     		PDF 2SK1150 50tti 2sk1150 b 772 my1 PS7K 2SK 1411 t8506

    2SK1149

    Abstract: transistor sb 772
    Text: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C


    OCR Scan     		PDF 2SK1149 2SK1149 transistor sb 772

    kb 778 o g 5

    Abstract: 3e tRANSISTOR kb 778 UA61
    Text: — S 7 • $ / — h f ê E 'ê ' > i> 7 * 9 -7 h Com pound Transistor / //PA 6118C ü, f# (c K-y V9 A 7 ¿ P A <r>Y'ÿ A °F IP 6 1 1 8 C t 7 * ffl 8 Elï# )StfO ] - 7 > y X ^ T H ' T f „ T T L ^ M O S L S I^ tB ÎJÎS f- d ^ h - fr- C , ^ - X fc îfc fc iS lIIR t


    OCR Scan     		PDF juPA611 PA6118Cii, kb 778 o g 5 3e tRANSISTOR kb 778 UA61