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    261 OPTO Search Results

    261 OPTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    261 OPTO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    66a hall sensor

    Abstract: unipolar stepper motor 12 vdc 7,5 deg equivalent relay to hm 810 PLC based PROJECTS S 261 Hall SMC-26 DCB-261 nema 34 stepper motor amp rj45 chart 1 3362 3
    Text: DCB-261 USERS GUIDE Table of Contents DCB-261 USERS GUIDE Revision date: 03/02/2010 Ad va nc e d M ic r o S ys te ms , I nc . | www. s t e p c o n tr o l. c o m i DCB-261 USERS GUIDE Table of Contents Table of Contents 1 Introduction . 1-1


    Original     		PDF DCB-261 DCB-261 66a hall sensor unipolar stepper motor 12 vdc 7,5 deg equivalent relay to hm 810 PLC based PROJECTS S 261 Hall SMC-26 nema 34 stepper motor amp rj45 chart 1 3362 3

    26-48-1026

    Abstract: No abstract text available
    Text: 261-2012:QuarkCatalogTempNew 8/27/12 2:27 PM Page 261 2 KK Series PC Board Connectors Breakaway Headers, Right-Angle with Friction Lock, Tin Crimp Terminal Housings, Receptacles with Locking Ramp Only RoHS 3B Mates with 2A, 2B and 2C. Fig. 3B 2B Mates with 1A, 1B and 1C.


    Original     		PDF -HT-1921 24-circuit 26-48-1026

    FDN86246

    Abstract: marking 246
    Text: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description „ Max rDS on = 261 m: at VGS = 10 V, ID = 1.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDN86246 FDN86246 marking 246

    LT 7232

    Abstract: GHM3045X7R222K-GC FDS6680A 336V 4329 LT1681 LTC1698 MMBT3906LT1 MURS120T3 31264R
    Text: = !48V !"#$%&' *+, ! 261 Kurk Mathews !"48V !"#$%&'()*+,!"#$%&'()*+,- ./01* !"#$%&' ()*+,-"./0 !"#$%&'()*+,-./0123 LT 1681 / LTC®1698 !"#$%&'( !"#$%&'()*+,-.$/012 !"#$%&'()*+,-./0123 !"#$ LT1681 !"#$%&'( )*+, !"#$%LTC1698 !"#$%&'( !"LT1681 !"#$250kHz !


    Original     		PDF LT1681 LTC1698 250kHz LTC1698 V/20A 36VIN 72VIN OUT/20A LT 7232 GHM3045X7R222K-GC FDS6680A 336V 4329 LT1681 MMBT3906LT1 MURS120T3 31264R

    Untitled

    Abstract: No abstract text available
    Text: Through Hole Lamp Product Data Sheet LTL-30EHJH96 Spec No.: DS20-2001-261 Effective Date: 10/02/2013 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.


    Original     		PDF LTL-30EHJH96 DS20-2001-261 BNS-OD-FC001/A4 STD-750D MIL-STD-883D 10mins MIL-STD-202F MIL-STD-750D

    eer3016

    Abstract: EER3016 transformer ntc 5D-9 2KBP06M2N257 IN4007 diode static resistance FSFM300N ZENER 4148 DATASHEET FSFM260N IN4007 SMD DATA SHEET CHARACTERISTICS DIODE IN4007
    Text: FSFM260N / FSFM261N / FSFM300N Green-Mode Fairchild Power Switch FPS Features Description ! Internal Avalanche-Rugged SenseFET The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power


    Original     		PDF FSFM260N FSFM261N FSFM300N FSFM260/261/300 240VAC 67kHz eer3016 EER3016 transformer ntc 5D-9 2KBP06M2N257 IN4007 diode static resistance FSFM300N ZENER 4148 DATASHEET IN4007 SMD DATA SHEET CHARACTERISTICS DIODE IN4007

    GHM3045X7R222K-GC

    Abstract: planar transformer layout FDS6680A 31264R VJ1825Y155MXB optocoupler Iso1 LT1681 LTC1698 MMBT3906LT1
    Text: advertisement Chip Set Offers Low Cost Alternative to 48V Telecom Modules Design Note 261 Kurk Mathews The demand for high performance 48V input telecom modules has never been higher. The latest generation modules offer high current, high efficiency alternatives to


    Original     		PDF 1681/LTC compMURS120T3 MMBT3906LT1 MURS120T3 LT1681 GHM3045X7R222K-GC VJ1825Y155MXB T510X337K010AS TPSE686M020R0150 MOC207 GHM3045X7R222K-GC planar transformer layout FDS6680A 31264R VJ1825Y155MXB optocoupler Iso1 LT1681 LTC1698 MMBT3906LT1

    Q65110A3337

    Abstract: BPX osram GEOY6021 OHRD1938 Q62703-Q395
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode


    Original     		PDF

    BPX osram

    Abstract: GEOY6021 OHLY0598 OHRD1938 Q65110A3337
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81


    Original     		PDF

    OHRD1938

    Abstract: BPX osram GEOY6021 Q62703-Q395 Q62703-Q67 LD261-1
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original     		PDF FDN86246

    TOP256

    Abstract: top*254 en top258 top253 top261 TOP257 TOP261YN TOP259-261YN TOP256YN TOP254PN
    Text: TOP252-261 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads


    Original     		PDF OP252-261 TOP256 top*254 en top258 top253 top261 TOP257 TOP261YN TOP259-261YN TOP256YN TOP254PN

    2KBP06M2N257

    Abstract: FSFM260
    Text: FSFM260N / FSFM261N / FSFM300N Green-Mode Fairchild Power Switch FPS™ Features Description  Internal Avalanche-Rugged SenseFET The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power


    Original     		PDF FSFM260N FSFM261N FSFM300N FSFM260/261/300 240VAC 67kHz 2KBP06M2N257 FSFM260

    GEO06021

    Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability


    Original     		PDF OHR01878 GEO06021 GEO06021 OHRD1938 Q62703-Q395 Q62703-Q67

    GEOY6021

    Abstract: OHLY0598 OHRD1938 Q65110A3337
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81


    Original     		PDF

    design opto interrupter

    Abstract: MW131 261 opto 0T526
    Text: • bfiD22MS 00D0170 2 * 0 T I OPTO TECHNOLOGY INC 42E » OPTO TECHNOLOGY OPTICAL SWITCH T Y P E OTS 261 Features ■ .035 aperture ■ Photodarlington ■ Low cost ii3 Description H I - 125 Non-contact switching is pro­ vided by Opto Technology’s OTS 261 Interrupter. This unit


    OCR Scan     		PDF IL60090 design opto interrupter MW131 261 opto 0T526

    Untitled

    Abstract: No abstract text available
    Text: MME D SIEMENS CMPNTS-, OPTO • Û23b32b QQOSlOfl b M S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit 'zm Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and


    OCR Scan     		PDF 23b32b LD261-4 LD261-5 -30-N-0

    LD261-4

    Abstract: LD261-5 LD269 lfl-10
    Text: SIEMENS CMPNTS-i OPTO 25E D • âS3b3Sb 0G04E3S LD 261 SERIES S IE M E N S IN F R A R E D EMITTER SINGLE AND ARRAYS -40 to +80 Storage Temperature Soldering Temperature Distance from soldering joint FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and


    OCR Scan     		PDF 0Q04E3S LD269 23b32ti QG0453b -30-20-fl 3010S LD261-4 LD261-5 lfl-10

    44e 003

    Abstract: No abstract text available
    Text: MME D SIEMENS CMPNTSi OPTO • Û23b32b QQOSlQfl b B S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit ^ ]¿ t¿ s Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and


    OCR Scan     		PDF 653b32b 44e 003

    HE8807SG

    Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


    OCR Scan     		PDF Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


    OCR Scan     		PDF Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) voltL7831G) 44Tb2QS HL7831G)

    CIO-MINI37

    Abstract: RADIO SHACK PARTS CROSS REF amd9513 GORDOS SOLID STATE RELAY laptop cq 42 MOTHERBOARD VOLTAGE diagram S0833 AD7748 DAS-1600 winbook toshiba ICs cross reference catalog
    Text: ATA ACQUISITION & CONTROL W4 :i' / na/og Volume 6 :f¡ A N EW A G E DAWNS’ ISA to PCM CIA 125 High Street Mansfield, MA 02048 508 261-1123 FAX (508)261-1094 ^ * u j -u a ô u o /a u 0 0 -D A S 0 8 P G H & L C IO -D A SO 8 C IO -D A S 48 » c n a n n e i ZUJS.HZ A / D m > g O ain & 2 C hannels o t 12 B it D /A


    OCR Scan     		PDF

    R-261

    Abstract: r260 DIODE
    Text: R-260/261 Series CLAROSTAT Reflective Optical Switches S B B C fiS AND CONTROLS GROUP Features Absolute Maximum Ratings TA = 25°C unless otherwise stated. • • • • • Storage and Operating to +65°C


    OCR Scan     		PDF R-260/261 R-260) R-261) R-261 r260 DIODE

    SFOR3G42

    Abstract: SFOR3B42 SFOR3D42 SFOR3J42 I-RTAX 02261 SF0R3J42 SF0R3 TOSHIBA THYRISTOR sfor3g
    Text: 9097250 TOSHIBA - ¿ t w n n Goossbi a | SF0R3J42 600V O T - SS"- &=> 39C 02 261 DISCRETE/OPTO PHASE CONTROL THYRISTOR Unit in mm 0.3A (65.1MAX. MAXIMUM RATINGS C H A R A C T ER IST IC SYM BOL 100 R epetitive Peak O ff-State Voltage SFOR3D42 and Repetitive


    OCR Scan     		PDF 10172S0 SF0R3J42 SFOR3B42 SFOR3D42 SFOR3G42 SFOR3J42 SFOR3G42 SFOR3D42 SFOR3J42 I-RTAX 02261 SF0R3J42 SF0R3 TOSHIBA THYRISTOR sfor3g