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IXYS Corporation IXKR25N80C MOSFET N-CH 800V 25A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKR25N80C	Tube			30	1 - 10 - 100 $20.88033 1000 $20.88033 10000 $20.88033	Buy Now
Mouser Electronics	IXKR25N80C					1 $25.19 10 $22.38 100 $20.88 1000 $20.88 10000 $20.88	Get Quote
Newark	IXKR25N80C	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	IXKR25N80C				1	1 $27.66 10 $21.96 100 $19.74 1000 $19.74 10000 $19.74	Get Quote
IXYS Corporation IXKG25N80C MOSFET N-CH 800V 25A ISO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKG25N80C	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXKC25N80C Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXKC25N80C				1	1 $12.46 10 $8.87 100 $8.87 1000 $8.87 10000 $8.87	Get Quote
IXYS Integrated Circuits Division IXKC25N80CC3 MOSFET DIS.25A 800V N-CH ISOPLUS220 COOLMOS THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXKC25N80CC3					1 $6.457 10 $6.457 100 $5.87 1000 $5.87 10000 $5.87	Get Quote
IXYS Integrated Circuits Division IXKR25N80C MOSFET DIS.25A 800V N-CH ISOPLUS247 COOLMOS THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXKR25N80C					1 $27.38258 10 $27.38258 100 $25.5912 1000 $25.5912 10000 $25.5912	Get Quote

25N80C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CoolMOS Power Transistor Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C
Untitled Abstract: No abstract text available Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	ISOPLUS220TM 25N80C ISOPLUS220LV 728B1 065B1 123B1
25N80C Abstract: No abstract text available Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions	Original	PDF	25N80C ISOPLUS220 E72873 25N80C
IXKR25N80C Abstract: No abstract text available Text: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432	Original	PDF	25N80C 125mW 247TM ISOPLUS247TM E153432 ISOPLUS247 O-247 IXKR25N80C
CoolMOS Power Transistor Abstract: ISOPLUS247 IXKR25N80C Text: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432	Original	PDF	ISOPLUS247TM 25N80C 247TM E153432 CoolMOS Power Transistor ISOPLUS247 IXKR25N80C
power switching Abstract: ISO264 ISO264TM ID90 Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20	Original	PDF	25N80C ISO264TM 728B1 065B1 123B1 power switching ISO264 ISO264TM ID90
25N80C Abstract: 25n80 E72873 mosfet b4 Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features	Original	PDF	25N80C ISOPLUS220 E72873 20080526a 25N80C 25n80 E72873 mosfet b4
25N80C Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80 Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432	Original	PDF	25N80C 125mW ISOPLUS247TM 247TM E153432 20080526a 25N80C "VDSS 800V" mosfet ISOPLUS247 25n80
25n8 Abstract: No abstract text available Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D ﬂ S S isolated back surface E72873 Features	Original	PDF	25N80C ISOPLUS220 E72873 0080526a 20080526a 25n8
Untitled Abstract: No abstract text available Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432	Original	PDF	25N80C ISOPLUS247â E153432 20080526a
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous	Original	PDF	ISOPLUS220TM 25N80C 220TM
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous	Original	PDF	ISOPLUS220TM 25N80C 25VDS 728B1 065B1 123B1
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	PDF	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D