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    25N120 IGBT Search Results

    25N120 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    25N120 IGBT Datasheets Context Search

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    IC IGBT 25N120

    Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12
    Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 25N120 25N120D1 O-247 IC IGBT 25N120 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12

    25N120

    Abstract: IC IGBT 25N120 25n120 IGBT D-68623
    Text: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		PDF 25N120 25N120D1 O-247 25N120 IC IGBT 25N120 25n120 IGBT D-68623

    25N120

    Abstract: 25N120 ixys
    Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 25N120 25N120D1 O-247 25N120 25N120 ixys

    IC IGBT 25N120

    Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E
    Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 25N120 25N120D1 O-247 IC IGBT 25N120 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E

    100N120

    Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
    Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50


    Original     		PDF 15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352

    25N120

    Abstract: 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A
    Text: Low VCE sat High speed IGBT IXGH 25 N120 IXGH 25 N120A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C


    Original     		PDF N120A O-247 25N120 25N120A 25N120 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A

    25N120

    Abstract: IC IGBT 25N120 n120 30 igbt 25N120A N120 IXGH25N120A
    Text: Low VCE sat High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES IC25 VCE(sat) 1200 V 1200 V 50 A 50 A 3V 4V Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 V


    Original     		PDF N120A 25N120 25N120A 25N120 IC IGBT 25N120 n120 30 igbt 25N120A N120 IXGH25N120A

    10n120

    Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
    Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp


    Original     		PDF MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 10n120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120

    15n120

    Abstract: IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120
    Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E–POWER modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0


    Original     		PDF MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 15n120 IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    c2555

    Abstract: IC IGBT 25N120 25N120
    Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C


    OCR Scan     		PDF 25N120 25N120A 25N120A c2555 IC IGBT 25N120

    25N120

    Abstract: IC IGBT 25N120 ixgh25n120 .25N120
    Text: IXGH25N120 IXGH25N120A L O W V CE sa« High speed IGBT V " ces *C25 VCE(sat) 1200 V 1200 V 50 A 50 A 3V 4V Q_ $ Symbol Test Conditions V *CES Tj = 25°C to 150°C 1200 V v CGR Tj = 25°C to 150°C; ReE = 1 MU 1200 V v GES Continuous ±20 V v GEM T ransient


    OCR Scan     		PDF IXGH25N120 IXGH25N120A O-247 25N120A 25N120A 25N120 IC IGBT 25N120 .25N120

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A

    SMD diode b24

    Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
    Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64


    OCR Scan     		PDF 12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode