SMD Magnetics
Abstract: smd marking code pJ 1219 SMD PJ 899
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0059-1201e
SMD Magnetics
smd marking code pJ 1219
SMD PJ 899
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Untitled
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3020 MHz 11.5 VDC 3265 Tuning Voltage: MHz 0.5 Supply Voltage: 6.46 6.80 7.14 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 40 mA Harmonic Suppression 2 Harmonic
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10kHz
100kHz
25-May-11
CRBV55BES-3020-3265
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24l16
Abstract: No abstract text available
Text: IHLP-6767DZ-11 Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Frequency range up to 750 kHz • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation Manufactured under one or more of the following:
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IHLP-6767DZ-11
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
24l16
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Untitled
Abstract: No abstract text available
Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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V10P10
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
J-STD-020,
11-Mar-11
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siz300dt
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.)
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SiZ300DT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TO-277
Abstract: No abstract text available
Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V10P10
O-277A
AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
2011/65/EU
2002/95/EC.
2011/65/EU.
TO-277
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Untitled
Abstract: No abstract text available
Text: PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR 3 x 3 0.450 0.650 0.018 (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3
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25-May-11
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sf5408
Abstract: No abstract text available
Text: SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage
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SF5400,
SF5401,
SF5402,
SF5403,
SF5404,
SF5405,
SF5406,
SF5407,
SF5408
2002/95/EC
sf5408
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Untitled
Abstract: No abstract text available
Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V
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SiZ340DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IHLP-6767DZ-11 Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Frequency range up to 750 kHz • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation Manufactured under one or more of the following:
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Original
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PDF
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IHLP-6767DZ-11
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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057 98B
Abstract: No abstract text available
Text: SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V
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SiZ300DT
2002/95/EC
11-Mar-11
057 98B
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11
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SiZ300DT
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11
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PDF
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SiZ300DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 200 MHz 5.0 VDC Lower Frequency: Upper Frequency: 400 MHz Tuning Voltage: Supply Voltage: 4.75 5.0 5.25 VDC +3.5 +7.0 dBm 15 mA Pushing: 4.0 MHz/V Pulling, all Phases:
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10kHz
100kHz
CVCO55CL-0200-0400
25-May-11
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Untitled
Abstract: No abstract text available
Text: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0111 at VGS = 10 V 30 a 0.0138 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: For definitions of
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SiZ342DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3020 MHz 11.5 VDC 3265 Tuning Voltage: MHz 0.5 Supply Voltage: 6.46 6.80 7.14 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 40 mA Harmonic Suppression 2 Harmonic
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Original
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PDF
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10kHz
100kHz
25-May-11
CRBV55BES-3020-3265
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104 aec capacitors
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . RFCS KEY BENEFITS • Industry’s highest SRF • Low DCR, high Q • Small size: 0.040 in. x 0.020 in. x 0.015 in. • S parameter files APPLICATIONS • Lumped element fIlters • Impedance matching circuits
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25-May-11
VMN-PT0275-1107
104 aec capacitors
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Untitled
Abstract: No abstract text available
Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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PDF
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V10P10
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
J-STD-020,
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () MAX. ID (A) 0.0095 at VGS = 10 V 30a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40a 0.0070 at VGS = 4.5 V
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Original
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PDF
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SiZ340DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.)
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Original
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PDF
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SiZ300DT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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PDF
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V10P10
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
J-STD-020,
2011/65/EU
2002/95/EC.
2011/65/EU.
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114250
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. 25MAY11 LOC DIST AD 00 R E VIS IO N S LTR DESCRIPTION Z4 REVISED PER DATE 2 5M A Y 11 E C O - 1 1-01 0 8 3 9 APVD DWN RK HMR CONTACT AREA PLATED WITH .0 0 0030 MIN GOLD, SOLDER LEADS
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25MAY11
114250
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MS25036
Abstract: No abstract text available
Text: 4 2 3 THIS DRAWING IS U NP UBLIS HED . RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. R E V IS IO N S 4 G DESCRIP TIO N Z2 DWN REVISED PER E C O - 1 1 -0 1 0839 APVD RK HMR 25MAY11 D D WIRE RANGE 2 2 - 1 6 AWG SOLID OR STRANDED r r \ \m^—J P13288 Ä L is te d
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25MAY11
P13288
LR7189
MS25036
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. 25MAY11 REVISIONS LOC DIST AD 00 LTR Z5 DESCRIPTION REVISED PER DATE 09 A U G 1 1 ECO-1 1 - 01 61 44 APVD DWN HMR JO CONTACT AREA PLATED WITH .0 0 0030 MIN GOLD, SOLDER LEADS
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25MAY11
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