IRHM7264SE
Abstract: No abstract text available
Text: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test
|
Original
|
PDF
|
91393D
IRHM7264SE
250Volt,
IRHM7264SE
|
Diode SOT-23 marking Js
Abstract: No abstract text available
Text: BAS19/BAS20 BAS21 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications
|
Original
|
PDF
|
BAS19/BAS20
BAS21
200mAMPERS
120-250VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
100mA
Diode SOT-23 marking Js
|
250volt power regulator
Abstract: IRHG7214 IRHG8214
Text: Provisional Data Sheet No. PD- 9.1711 IRHG7214 IRHG8214 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 250Volt, 2.25Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
|
Original
|
PDF
|
IRHG7214
IRHG8214
250Volt,
MO-036AB
250volt power regulator
IRHG7214
IRHG8214
|
DIODE JS
Abstract: diodes ir trr 50ns DIODE JS 4 MarKING JS DIODE JS.4 Diode SOT-23 marking J J marking js 4 Switching diode 4
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAS21A/C/S Features • • Power dissipation: 225mW Tamb=25℃ Forward current: 200mA 225mW 250Volt Switching Diode SOT-23 A D BAS21A
|
Original
|
PDF
|
BAS21A/C/S
225mW
200mA
225mW
250Volt
OT-23
BAS21A
BAS21C
BAS21S
1100mV
DIODE JS
diodes ir
trr 50ns
DIODE JS 4
MarKING JS
DIODE JS.4
Diode SOT-23 marking J
J marking
js 4
Switching diode 4
|
pcb 200W audio amplifier
Abstract: IRHNB7264SE
Text: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No
|
Original
|
PDF
|
PD-91738
IRHNB7264SE
250Volt,
pcb 200W audio amplifier
IRHNB7264SE
|
BAV19WS
Abstract: BAV20WS BAV21WS
Text: BAV19WS/BAV20WS BAV21WS Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS P b Lead Pb -Free Features: * Fast Switching Speed. * Surface Mount PackageIdeally. * High Conductance. * For General Purpose Switching Applications. Suited for Automatic Insertion.
|
Original
|
PDF
|
BAV19WS/BAV20WS
BAV21WS
200mAMPERS
120-250VOLTS
OD-323
MIL-STD-202,
004grams
OD-323
100mA
BAV19WS
BAV20WS
BAV21WS
|
IRHNA7264SE
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1432A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology
|
Original
|
PDF
|
IRHNA7264SE
250Volt,
IRHNA7264SE
|
IRHNA7264SE
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1432 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.
|
Original
|
PDF
|
IRHNA7264SE
250Volt,
IRHNA7264SE
|
Untitled
Abstract: No abstract text available
Text: BAS20/BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 200-250VOLTS Features: * We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw
|
Original
|
PDF
|
BAS20/BAS21
200mAMPERS
200-250VOLTS
OT-23
OT-23
25-May-2011
BAS20
BAS21
|
BAS20
Abstract: BAS19 BAS21
Text: BAS19/BAS20 BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications 3 Mechanical Data:
|
Original
|
PDF
|
BAS19/BAS20
BAS21
200mAMPERS
120-250VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
00haracteristic
BAS20
BAS19
BAS21
|
250Volts
Abstract: 7272 QIE0220001 QIE0220002
Text: QIE0220002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Trench Gate Design Six IGBTMODTM 200 Amperes/250Volts Label P N CONNECTION DIAGRAM Page 1 5/2/2007 QIE0220002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
|
Original
|
PDF
|
QIE0220002
Amperes/250Volts
QIE0220001
250Volts
7272
QIE0220001
QIE0220002
|
BAS20
Abstract: sot23 marking JR bas21 js Diode SOT-23 marking J BAS19 BAS21 MARKING JS sot-23
Text: BAS19/BAS20 BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications 3 Mechanical Data:
|
Original
|
PDF
|
BAS19/BAS20
BAS21
200mAMPERS
120-250VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
00eristic
BAS20
sot23 marking JR
bas21 js
Diode SOT-23 marking J
BAS19
BAS21
MARKING JS sot-23
|
Untitled
Abstract: No abstract text available
Text: BAV19WS/BAV20WS BAV21WS Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS P b Lead Pb -Free Features: * Fast Switching Speed. * Surface Mount PackageIdeally. * High Conductance. * For General Purpose Switching Applications. Suited for Automatic Insertion.
|
Original
|
PDF
|
BAV19WS/BAV20WS
BAV21WS
200mAMPERS
120-250VOLTS
OD-323
MIL-STD-202,
004grams
OD-323
100mA
|
IRHM7264SE
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1393C IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
|
Original
|
PDF
|
1393C
IRHM7264SE
250Volt,
IRHM7264SE
|
|
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS PG Long Life, High Reliability series Low Impedance Anli-Solvenl Feature Through 250Vonly Long Lile •Extended load life up to 7000hours at +1 05 °C . PG Long Life •Specifications P erfo rm an ce C h a ra cte ristics
|
OCR Scan
|
PDF
|
250Vonly)
7000hours
10X20
16X25
18X40
120Hz
105TC
120Hz
300Hz
|
Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Pro, *. dv/dt R ATED HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRH N A7264SE N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11 on, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology
|
OCR Scan
|
PDF
|
A7264SE
250Volt,
California90245,
S54S2
|
Untitled
Abstract: No abstract text available
Text: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y
|
OCR Scan
|
PDF
|
IRHG7214
IRHG8214
250Volt,
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET
|
OCR Scan
|
PDF
|
1393C
IRHM7264SE
250Volt,
4SS54S2
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1393C International IO R Rectifier IRHM7264SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11£1, (SEE) RAD HARD HEXFET
|
OCR Scan
|
PDF
|
1393C
IRHM7264SE
250Volt,
|
sot23 js marking
Abstract: BAS20 BAS21 DIODE BAS JS v
Text: BASI9/BAS20 BAS21 1 Surface M o u n t S w itching Diode SWITCHING DIODE 200mA MPERS 120-250VO ITS Features: *F ast S w itc h in g S peed •S u rfa c e M o u n t P ackage Id e a lly S u ite d fo r A u to m a tic In s e rtio n *H ig h C o n d u c ta n c e *F or G eneral P u rp o se S w itc h in g A p p lic a tio n s
|
OCR Scan
|
PDF
|
BASI9/BAS20
BAS21
OT-23
MIL-STD-202.
008grams
200mA
120-250VOLTS
OT-23
Cha100
sot23 js marking
BAS20
BAS21
DIODE BAS JS v
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD- 9.1711 International I R Rectifier R EPETITIVE AVALANCHE AND dv/dt RATED IRHG721 4 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 250Volt,2.25£2, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD H ARD te c h n o lo g y
|
OCR Scan
|
PDF
|
IRHG721
IRHG8214
250Volt
|
Untitled
Abstract: No abstract text available
Text: ^ 5^*^ MMWA-EF METALLIZED POLYESTLR FILM CAPACITORS MMWA-EF^ jr,7sX ♦ # ft/FEATURES • i 5 HI * 5 it <D* I ' =i > x > -9- V t „ • a i r o S ji • Ic S t i f t t U L 9 4 V -0 £t „ [z & -p T I ' f <0 <D t ti r i's t X tK + '> i t £ m L T l' t
|
OCR Scan
|
PDF
|
AC125,
154LE
AC125V
AC250V
250Vo-p
630Vo-p
|
F4823
Abstract: F2683
Text: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type ECWF B D e s ig n e d fo r a p p lic a tio n s w h e re h ig h c u rre n t a n d h ig h fre q u e n c y are re q u ire d • Features • L o w - lo s s • E x c e lle n t fre q u e n c y c h a ra c te ris tic s
|
OCR Scan
|
PDF
|
250VDC
150Vrms
250Vo-p)
F4823
F2683
|
taf 3
Abstract: Vgl-45 tungsram ot-400 tungsram
Text: 25 TUNGSRAM R A D IO Type TAF 3 — Hochfrequenz-Penthode R e g e l- C h a r a k t e r is t ik D ie R öhre TAF 3 ist eine H o c h fre q u e n z -P e n th o d e so a u sg e b ild e t ist, d a ss d a s Z u stan d e kom m e n e in e r mit R e ge l-C h ara kteristik,
|
OCR Scan
|
PDF
|
|
