VID200-12S4
Abstract: VDI200-12S4 200-12S4 VII200-12S4 IXYS DS
Text: IGBT Modules Half-Bridge and Chopper Configurations VII High Short Circuit SOA Capability VII 200-12S4 VID 200-12S4 VDI 200-12S4 VID 3 VDI 3 3 3 8 9 1 11 10 2 1 11 10 Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES
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200-12S4
VII200-12S4
VID200-12S4
VDI200-12S4
VID200-12S4
VDI200-12S4
200-12S4
VII200-12S4
IXYS DS
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Brown Boveri induction Motor
Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Text: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C
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VII200-12G4
IC100
Brown Boveri induction Motor
sj 2025
ic sj 2025
ASEA fast thyristor
berulub F
GD Rectifiers
BROWN BOVERI servo motor
bn16
brown Boveri diode
Diode BN16
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VII75-12S3
Abstract: IC100 VDI75-12S3 VID75-12S3
Text: IGBT Modules Half-Bridge and Chopper Configurations High Short Circuit SOA Capability VII VII 75-12S3 VID75-12S3 VDI75-12S3 VID 3 VDI 3 8 9 1 11 10 2 1 11 10 Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM 8 9
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75-12S3
VID75-12S3
VDI75-12S3
IC100
VII75-12S3
VII75-12S3
IC100
VDI75-12S3
VID75-12S3
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VID150-12S4
Abstract: VII150-12S4 150-12S4 VDI150-12S4
Text: IGBT Modules Half-Bridge and Chopper Configurations VII High Short Circuit SOA Capability VII 150-12S4 VID 150-12S4 VDI 150-12S4 VID 3 VDI 3 8 9 1 11 10 2 1 11 10 Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM
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150-12S4
VII150-12S4
VID150-12S4
VDI150-12S4
VID150-12S4
VII150-12S4
150-12S4
VDI150-12S4
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VDI100-12S3
Abstract: VII100-12S3 VID100-12S3 IC100
Text: IGBT Modules Half-Bridge and Chopper Configurations VII High Short Circuit SOA Capability VII 100-12S3 VID100-12S3 VDI100-12S3 VID 3 VDI 3 8 9 1 11 10 2 1 11 10 Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM 8
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100-12S3
VID100-12S3
VDI100-12S3
IC100
VII100-12S3
VDI100-12S3
VII100-12S3
VID100-12S3
IC100
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12S-4
Abstract: VDI125-12S4 VID125-12S4 VII125-12S4
Text: IGBT Modules Half-Bridge and Chopper Configurations VII High Short Circuit SOA Capability VII 125-12S4 VID125-12S4 VDI125-12S4 VID 3 VDI 3 8 9 1 11 10 2 1 11 10 Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM 8
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125-12S4
VID125-12S4
VDI125-12S4
VII125-12S4
12S-4
VDI125-12S4
VID125-12S4
VII125-12S4
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Untitled
Abstract: No abstract text available
Text: J package Part num ber schem e J T 25 N 16 KNX 1 Transparent view of gate pin terminal 1.47mm 0.060 DIA. 20 2 3 4 5 6 1) Package designation 2) Thyristor designation (i.e. SCR) 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier (example: 16 x 100 = 1600)
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111mm
280mm
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 3 -J 3 = 2 .0 DC RESISTANCE: P 3 - J 3 P 4 -J 4 3 .0 IMPEDANCE: P 4 -J 4 CMA - d B TYPICAL CMA ( - d B ) MIN 30 25 40 30 2 MHz 40 30 6 MHz 35 25 10 MHz 30 20 FREQUENCY 10 0 KHz 1 MHz : 3 .0 mH : : 1.0 o h m
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SI-20153
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 INDUCTANCE: P 6 -J 6 = P 3 -J 3 2 .0 DC RESISTANCE: P 6 - J 6 P 3 -J 3 P 2 -J 2 P 1 -J 1 3 .0 3 .0 ; P 2 -J 2 = P 1 COMMON MODE ATTENUATION: FREQUENCY M H z T Y P IC A L 1 8 5 17 20 23 70 25 200
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--20C
SI-20143
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si20144
Abstract: CT640041
Text: ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 INDUCTANCE: P 6 -J 6 = P 3 -J 3 2.0 DC RESISTANCE: P 6 -J 6 P 3 -J 3 P 2 -J 2 P 1 -J 1 3.0 3.0 COMMON MODE ATTENUATION: FREQUENCY MHz ; P 2 -J 2 = P 1 TYPICAL 1 8 5 17 20 23 70 25 200 22 500 11
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CT640041C1
SI-20144
si20144
CT640041
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SI-20019
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 INDUCTANCE: P 6 -J 6 = P 3 -J 3 2.0 DC RESISTANCE: P 6 -J 6 P 3 -J 3 P 2 -J 2 P 1 -J 1 3.0 3.0 COMMON MODE ATTENUATION: FREQUENCY MHz ; P 2 -J 2 = P 1 TYPICAL 1 8 5 17 20 23 70 25 200 22 500 11
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SI-20019
SI-20019
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 INDUCTANCE: P 6 -J 6 = P 3 -J 3 2.0 DC RESISTANCE: P 6 -J 6 P 3 -J 3 P 2 -J 2 P 1 -J 1 3.0 3.0 COMMON MODE ATTENUATION: FREQUENCY MHz ; P 2 -J 2 = P 1 TYPICAL 1 8 5 17 20 23 70 25 200 22 500 11
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UL94V0
CT660007/24-0004
I-20020
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u0010
Abstract: No abstract text available
Text: PRODUCT NO DESCRIPTION SEE TABLE J REQIM S. REVISED MRC 9/19/90 ARRANGEMENT AND STYLE NOTE IO.II.12.13. .0 1 0 '0.25 -R -048 I .22 REF $• & - DIM [B~|- .010'.25 X Y ® .016/.41 ® X Y ® AT BASE. TYP AT TIPS. TYP NOTE 3 EuRnt Efeetrafcs J J J J J J J J j|j o|J J J
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Untitled
Abstract: No abstract text available
Text: LOW ER ROW < D d> - <&> ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE P 6 - J 6 ( P l- J l) 2.0 DC R ESIST A N C E P 6 - J 6 J P 3 - J 3 ; P 2 - J E J P I - J1 3.0 COMMON MDDEi FREQUENCYCMHz) T Y PICALC-dB) 1 8 5 17 20 23 70 25 2 00 22 500 11 UPPER REV •65uH TYP g 0,1V ; LOKHz
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SI-30036
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC> ELECTRICAL CHARACTERISTICS @ 25 'C P 3 -P 5 -P 6 : J 3 -J 6 ) P 1 -P 4 -P 2 ) : (J 1 -J 2 )
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2002/95/EC>
350uH
FM999185
10/100BT
SI-60159-F
SI-60159-F
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC J ELECTRICAL CHARACTERISTICS O 25’C 1.0 TURNS RATIO: P 3 -P 5 -P 6 : (J 3 -J 6 )
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2002/95/EC
350uH
100KHz,
30MHz
60MHz
80MHz
FM999185
10/1OOBT
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Untitled
Abstract: No abstract text available
Text: DS2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design 28 □ V cc A12 C 2 27 □ WE A7 C 3 28 CE2 A6 L 4 25 A5 L_ 5 24 A4 C 6 23 ASC 7 22 J 3 J J J A2 C S 21 n A10 A1 C 9 20 AC u 10 19 DQ0 L 11 OQ1 C 12 OQ2 C
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DS2064
28-pin
DS2064
65536-bit
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F16N
Abstract: 25 j 3 pin
Text: Packages Available • M in i mold type .6 r Body Unit : mm 1 i dimension j r 2.0 '( 0 .8 J r 2.9 I .25 1608 (0 6 03 ) 21 2 5 (0805) 2913 (1 1 05 ) - - - Actual size UMT EM 3 i r j, S S T (U. S. / E u r o p e a n S O T -2 3 ) 3-Pin Enlarged x 3.0) UM4 5-Pin
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MFW10
F16N
25 j 3 pin
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Untitled
Abstract: No abstract text available
Text: D-Subminiature connectors ig r r ” , -m -w -w 111" “ ’f * ^ ''J I J ,J T H E D ffB 3 3 T & Solder pin straight with threaded spacer clip Kat 1 i G6A Kat 1 i G7A A -0 ,7 6 B - 0,25 C 9 31,19 16,46 25,00 15 39,52 24,79 25 53,42 37 50 No. of pos. A - 0,76
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15-polig/way
25-polig/way
37-polig/way
50-polig/way
26-polig/way
44-polig/way
62-polig/way
78-poliq/way
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EM901
Abstract: EM903 EM904 EM911 EM951 EM952
Text: COHPUTER P R D T sT p OWERTT dF J 2313103 □ □ □ 0 3 ‘i b 3 "J” , SPECIFICATIONS T ^ s n - ii All Specifications Typical at Nominal Line, Full Load, and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage A ccuracy. ± 3 .0% , max.
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03cib
EM900
EM911
EM913
EM914
EM961
EM962
EM901S,
EM951S,
EM901
EM903
EM904
EM911
EM951
EM952
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Untitled
Abstract: No abstract text available
Text: R E V . I B X I ' FIGURE 1 THROUGH HOLE - 0 1 ,-1 1 ,- 2 1 ,-3 1 No. OF POS. x .0 5 0 + .1 25 REF [1 .2 7 ] [3 .1 8 ] ANGLES ONE PLACE DECIMALS ±.1 [2,54]tHREE PLACE DECIMALS t'« f j j ] TWO PLACE DECIMALS ±.01 [.25]FOUR PLACE DECIMALS ±,0020 [.0 5] ± 2 '
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Untitled
Abstract: No abstract text available
Text: multi-chip light bars LUME SSB-LX620xx Series 6x20mm, 3-Chip Light Bars 11.40 CO.44 9 ] 1 9 .9 0 [ 3 7 8 3 ] 6.80 [0 2 6 8 ] J 3 50 [0.020] _ J L _ 2 PLS. 1.20 [0.047] TYP. 0 50 [0.020] (2 PLS.) 6 40 [0 .25 2] 2 3 4 FEATURES / OPTIONS APPLICATIONS / USES
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6x20mm,
SSB-LX620xx
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PDF
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Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIO O X Yes Yes ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise n oted : GREEN/ORANGE YELLOW INDUCTANCE: 350uH m in., 100kHz, lOOmV, 8mADC, J 1 - J 2 ; J 3 - J 6 , Lp. DIELECTRIC RATING: 1500Vrms for 1 m inute te ste d betw een P I —J l( t ie P 3 + P 4 ).
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350uH
100kHz,
1500Vrms
100MHz.
30MHz.
45MHz.
60MHz.
80MHz.
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JIS-B-6015
Abstract: JISB6015 HY 25-P
Text: Table of Content Series HS Description^^ Item Metal receptacle Typical product Shell size 12 14 16 21 25 P, R , J , R C P, R , R C P, R , J , R C P, R , J , RC P, R , RC 2 2 2 , 3 , 4, 5 2, 3 , 4 , 5, 6, 7, 8, 10 2 ,3 , 4 , 5 , 6 , 7 ,8 , 10 7A 7A 7 A : 2, 3, 4
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JIS-B-6015
IL-C-5015
JISB6015
HY 25-P
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