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    251C

    Abstract: CEM8435A
    Text: March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V, -7.9A, R ds on =24itiQ R ds(on)=40itiQ @Vgs=-1 0V. @Vgs=-4.5V. D D D • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		CEM8435A 40itiQ 251C CEM8435A PDF