sup65p06
Abstract: No abstract text available
Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP/SUB65P06-20
O-220AB
O-263
SUB65P06-20
SUP65P06-20
O-220AB
O-263)
S-57253--Rev.
24-Feb-98
sup65p06
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Si4559EY
Abstract: No abstract text available
Text: Si4559EY Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1
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Si4559EY
S-57253--Rev.
24-Feb-98
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sup60n06-18
Abstract: SUB60N06-18
Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP/SUB60N06-18
O-220AB
O-263
SUB60N06-18
SUP60N06-18
57253--Rev.
24-Feb-98
sup60n06-18
SUB60N06-18
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Si4559EY
Abstract: No abstract text available
Text: Si4559EY Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1
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Si4559EY
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUP/SUB75N08-10 Siliconix N-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUP/SUB75N08-10
O220AB
SUB75N0810
SUP75N0810
O-220AB
O-263)
O-263
S-57253--Rev.
24-Feb-98
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Untitled
Abstract: No abstract text available
Text: SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB40N06-25L
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SUP/SUB40N06-25L
O-220AB
O-263
SUP40N06-25L
SUB40N06-25L
O-220AB
O-263)
O-263
08-Apr-05
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vishaysiliconix
Abstract: No abstract text available
Text: SUP/SUB70N06-14 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.014 70a TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUP/SUB70N06-14
O-220AB
O-263
SUP70N06-14
SUB70N06-14
O-263)
O-263
S-57253--Rev.
24-Feb-98
vishaysiliconix
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Untitled
Abstract: No abstract text available
Text: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUP/SUB75P03-08
O220AB
SUB75P0308
SUP75P0308
O-220AB
O-263)
O-263
S-57253--Rev.
24-Feb-98
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Untitled
Abstract: No abstract text available
Text: SUP/SUB75N05-06 Siliconix N-Channel 50-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUP/SUB75N05-06
O-220AB
O-263
SUP75N05-06
SUB75N05-06
O-263)
O-263
S-57253--Rev.
24-Feb-98
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Si9945AEY
Abstract: No abstract text available
Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET
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Si9945AEY
08-Apr-05
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SMP60N03-10L
Abstract: smp60n03
Text: SMP60N03-10L Siliconix N-Channel 30-V D-S , 150_C MOSFET, Logic Level Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.01 60 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SMP60N03-10L
O-220AB
S-57253--Rev.
24-Feb-98
SMP60N03-10L
smp60n03
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AMD29LV
Abstract: hacker pb Burner 12bit shift register ic burner ADSP-2100 EE-39 ADSP-2100 Family Assembler Tools AMD29LV010
Text: Engineer To Engineer Note EE-39 Notes on using Analog Devices’ DSP, audio, & video components from the Computer Products Division Phone: 800 ANALOG-D or (781) 461-3881, FAX: (781) 461-3010, EMAIL: [email protected] Interfacing Byte Programmed Flash Memories to the
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EE-39
ADSP-218x
asm21
AMD29LV
hacker pb
Burner
12bit shift register
ic burner
ADSP-2100
EE-39
ADSP-2100 Family Assembler Tools
AMD29LV010
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SUP75N08-10
Abstract: SUB75N08-10
Text: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP/SUB75N08-10
O-220AB
O-263
SUB75N08-10
SUP75N08-10
O-220AB
O-263)
O-263
08-Apr-05
SUP75N08-10
SUB75N08-10
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sub60n06
Abstract: sup60n06-18 SUB60N06-18
Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP/SUB60N06-18
O-220AB
O-263
SUB60N06-18
SUP60N06-18
08-Apr-05
sub60n06
sup60n06-18
SUB60N06-18
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CK408
Abstract: CK-408
Text: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage
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4480DY
CK408
CK-408
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Untitled
Abstract: No abstract text available
Text: n 7 T H I S DRAWING JÊL COPYRIGHT 15 U N P U B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N , 6 4 5 3 2 19 L OC ALL R IG H T S R ES E R V E D . BY AMP INCORPORATED. A D DI S T REVI SI ONS 47 DESCRIPTION C REVISE PER ECN 0U1B-0198-00 5U 2 1 5EP00
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0U1B-0198-00
5EP00
24FEB9S
24FEB98
03-0CT-00
t3172
/home/ampt3172/edmmod
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Untitled
Abstract: No abstract text available
Text: 4 DRA WI N G THIS MADE IN THIRD DRAWI NG C ANGL E IS UNPUBLISHED. COPYRIGHT 19 2 3 PROJECTION RED EASED BY AMP FOR R U B D I C A T I ON INCORPORATED. ALL LOC ,19 INTERNATIONAL RIGHTS D I ST Ah RESERVED. REV I 5 I ONS 50 P F ZONE LTR B DESCRIPTION REV PER
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0L10-0040-98
24-FEB-98
s/dept212
/dwq2121/
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS 0 DRAWING C O PY R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL PUBLICATION FOR RI C 5 ,19 PITS R ES ER V ED . D C -S: IÖ I 71 o mm p a iw ir R i M ILE k h H® — 0 . 95 - in as i b h h i h b I h b D R I L L E D HOLE
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21-JAN-05
27JUN96
us040973
/home/us040973/dmmod
24FEB98
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Untitled
Abstract: No abstract text available
Text: r 8 7 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 5 6 ,19 ALL R1GHIhl RESERVED. D C 27 . 8 1 16.26 13.72 9.02 A CO MODEL CO 3-DIMENSIONAL NTS 6 . 30 2 . 36 0.25 0.13 MM CONVERSION AMP 4605 REV 11JUN97 24-FEB-98
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11JUN97
24-FEB-98
19B38
/home/ampl9538/ec287-97
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Untitled
Abstract: No abstract text available
Text: SUD50N03-10 Siliconix N-Channel 30-V D-S , 175 °C MOSFET Product Summary r DS(on) ( ^ ) Id (A) 0.010 @ V o s = 10 V ±15 ±12 V d s (V ) 30 0.019 @ VGs = 4.5 V yis te * 'VV^'oe^ 1 D O T O -252 o TT A <Ji Drain Connected to Tab G D S Top View Order Number:
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SUD50N03-10
SUD50N03-10
S-57253--Rev.
24-Feb-98
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Untitled
Abstract: No abstract text available
Text: n THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP ALL IN COR PO RA TE D. FOR 7 , PUBLICATION R IG H T S 4 5 6 3 2 19 DI ST LOC AD R ES ER V ED . REVI SI ONS 47 DESCRIPTION C / V / s / v / - s / - S / s / V / V /
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24FEB98
27JUN96
30-JUL-99
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Untitled
Abstract: No abstract text available
Text: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SUP/SUB60N06-18
O-220AB
O-263
SUB60N06-18
SUP60N06-18
O-220AB
O-263tors
S-57253â
24-Feb-98
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Untitled
Abstract: No abstract text available
Text: SUD25N06-45L VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET, Logic Level Product Summary V DS (V) 60 tied; Id (A) rDS(on) (£2) 0.035 @ VGs = 10 V 25 0.045 @ VGs = 4.5 V 22 -^eWPe' \T 5 ,.vv:v * * * ' " _ al » D Q TO -252 o T J Drain Connected to Tab
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SUD25N06-45L
S-57253â
24-Feb-98
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Untitled
Abstract: No abstract text available
Text: 7 THIS C DRAWING C O PY R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION 5 6 ,19 PITS R ES ER V ED . D C -48 . 0 ^^ mmmbin ¡Hü mm ü mm in bbbb IS mm m ]§0§H mmm mmmm mmmm ii mm m nn BEI b b b BBBB BIS 11 SBBÖ B B B B
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21-JAN-05
27JUN96
24FEB98
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