24A GT Search Results

24A GT Result Highlights (5)

Part	Manufacturer	Description
CS1100	Coilcraft Inc	Current Sense Transformer, 24A, 1:100
CS4100V-01L	Coilcraft Inc	Current Sense Transformer, 24A, ROHS COMPLIANT
UPA2814T1S-E2-AT	Renesas Electronics Corporation	Pch Single Power Mosfet -30V -24A 7.8Mohm HWSON-8
UPA2825T1S-E2-AT	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 24A 4.6Mohm HWSON-8
10070165-00219ALF	Amphenol Communications Solutions	D-Sub MicroTCA, Input Output Connectors, Cable Connector 24A 48V, Solder Bucket, without Accessory, Carton Box.

24A GT Price and Stock

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Samtec Inc ICO-624-AGT .100" LOW PROFILE SCREW MACHINE Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ICO-624-AGT	Tube			18	1 - 10 - 100 $9.64944 1000 $9.64944 10000 $9.64944	Buy Now
Mouser Electronics	ICO-624-AGT					1 $7.4 10 $6.84 100 $6.84 1000 $4.43 10000 $2.63	Get Quote
Newark	ICO-624-AGT	Bulk			1	1 $10.03 10 $10.03 100 $6.56 1000 $4.98 10000 $4.98	Buy Now
Master Electronics	ICO-624-AGT					1 - 10 - 100 $7.75 1000 $4.67 10000 $2.72	Buy Now
Sager	ICO-624-AGT				1	1 $7.4 10 $6.84 100 $4.88 1000 $4.43 10000 $4.43	Buy Now
Samtec Inc ICA-324-AGT .100" SCREW MACHINE DIP SOCKET Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ICA-324-AGT	Tube			18	1 - 10 - 100 $8.13889 1000 $8.13889 10000 $8.13889	Buy Now
Mouser Electronics	ICA-324-AGT					1 $7.4 10 $6.84 100 $6.84 1000 $4.43 10000 $2.63	Get Quote
Master Electronics	ICA-324-AGT					1 - 10 - 100 $7.75 1000 $4.67 10000 $2.72	Buy Now
Sager	ICA-324-AGT				1	1 $7.4 10 $6.84 100 $4.88 1000 $4.43 10000 $4.43	Buy Now
Samtec Inc ICA-624-AGT .100" SCREW MACHINE DIP SOCKET Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ICA-624-AGT	Tube			18	1 - 10 - 100 $8.13889 1000 $8.13889 10000 $8.13889	Buy Now
Mouser Electronics	ICA-624-AGT					1 $7.4 10 $6.84 100 $6.84 1000 $4.43 10000 $2.63	Get Quote
Newark	ICA-624-AGT	Bulk			1	1 $10.03 10 $10.03 100 $6.56 1000 $4.98 10000 $4.98	Buy Now
Master Electronics	ICA-624-AGT					1 - 10 - 100 $7.75 1000 $4.67 10000 $2.72	Buy Now
Sager	ICA-624-AGT				1	1 $7.4 10 $6.84 100 $4.88 1000 $4.43 10000 $4.43	Buy Now
Samtec Inc ICO-324-AGT .100" LOW PROFILE SCREW MACHINE Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ICO-324-AGT	Tube			18	1 - 10 - 100 $8.13889 1000 $8.13889 10000 $8.13889	Buy Now
Mouser Electronics	ICO-324-AGT					1 $7.4 10 $6.84 100 $6.84 1000 $4.43 10000 $2.63	Get Quote
Master Electronics	ICO-324-AGT					1 - 10 - 100 $7.75 1000 $4.67 10000 $2.72	Buy Now
Sager	ICO-324-AGT				1	1 $7.4 10 $6.84 100 $4.88 1000 $4.43 10000 $4.43	Buy Now
YAGEO Corporation SMEJ24AG-TR7 TVS DO218AB 24V 38.9V AUTO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMEJ24AG-TR7	Reel			150	1 - 10 - 100 - 1000 $1.59264 10000 $1.59264	Buy Now

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24A GT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
finder 81.11 Abstract: DSS41A05 sil 9024 gordos 741a-4 dss41a05b Magnecraft HE721C0510 HE3621A2410 gordos 831A-5 nais jw1fsn Text: SECTION 1 Section 1 Magnecraft Supercedes Magnecraft 781XAXM4L-24A 781XAXM4L-120A 781XAXM4L-220/230A 781XAXM4L-240A 781XAXM4L-12D 781XAXM4L-24D 781XAXM4L-110D 781XAXTM4L-120A 781XAXTM4L-12D 781XAXTM4L-24D 781XAXC-24A 781XAXC-120A 781XAXC-24D 781XAXML-24A 781XAXML-120A	Original	PDF	781XAXM4L-24A 781XAXM4L-120A 781XAXM4L-220/230A 781XAXM4L-240A 781XAXM4L-12D 781XAXM4L-24D 781XAXM4L-110D 781XAXTM4L-120A 781XAXTM4L-12D 781XAXTM4L-24D finder 81.11 DSS41A05 sil 9024 gordos 741a-4 dss41a05b Magnecraft HE721C0510 HE3621A2410 gordos 831A-5 nais jw1fsn
Untitled Abstract: No abstract text available Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	JANSR2N7406 FSF250R4
Untitled Abstract: No abstract text available Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSF250D, FSF250R
1E14 Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has	Original	PDF	JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
1E14 Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3 Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSF250D, FSF250R 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
p12n60c3 Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123 Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123
Untitled Abstract: No abstract text available Text: [ /Title HGTP 12N60 C3R, HGT1 S12N6 0C3RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch HGTP12N60C3R, HGT1S12N60C3RS T UCT ROD RODUC P E P T E E OL UT	Original	PDF	GTP12 HGTP12N60C3R, HGT1S12N60C3RS 12N60 S12N6
p12n60c3 Abstract: p12n60 HGTP12N60C3 S12N60C3 TA49123 HGT1S12N60C3S HGT1S12N60C3S9A LD26 RHRP1560 Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 p12n60 S12N60C3 TA49123 HGT1S12N60C3S9A LD26 RHRP1560
Untitled Abstract: No abstract text available Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC.
FDA24N50F Abstract: No abstract text available Text: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDA24N50F FDA24N50F
FDA24N50F Abstract: mj 4310 Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDA24N50F FDA24N50F mj 4310
fda24n50f Abstract: A1872 ir 4310 Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDA24N50F FDA24N50F A1872 ir 4310
TA49188 Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar	Original	PDF	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns TA49188 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
Untitled Abstract: No abstract text available Text: UniFETTM FDP24N40 tm N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDP24N40 FDP24N40

N-Channel mosfet 400v Abstract: FDP24N40 FDPF24N40 Text: UniFETTM FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDP24N40 FDPF24N40 FDPF24N40 N-Channel mosfet 400v
N-Channel mosfet 400v 24A Abstract: MOSFET 400V TO-220 FDP24N40 FDPF24N40 N-Channel mosfet 400v Text: UniFETTM FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDP24N40 FDPF24N40 FDPF24N40 N-Channel mosfet 400v 24A MOSFET 400V TO-220 N-Channel mosfet 400v
FDA24N50 Abstract: diode marking 226 Text: UniFET TM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19 Features Description • RDS on = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDA24N50 FDA24N50 diode marking 226
TA49392 Abstract: ISL9R2480G2 R2480G2 R2480G Text: ISL9R2480G2 Data Sheet P RE LIMINARY November 2000 File Number 5005 24A, 800V Stealth Diode Features The ISL9R2480G2 is a Stealth™ diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current IRRM and	Original	PDF	ISL9R2480G2 ISL9R2480G2 TA49392 R2480G2 R2480G
Untitled Abstract: No abstract text available Text: UniFETTM FDP24N40 tm N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A • Low gate charge ( Typ. 46nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	PDF	FDP24N40
12N60C3 Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	PDF	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12N60C3 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
12n60c Abstract: 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60 Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	PDF	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60
g12n60c3d Abstract: hyperfast diode reference guide HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 g12n60c3 Text: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	PDF	HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC g12n60c3d hyperfast diode reference guide LD26 RHRP1560 TA49061 TA49123 g12n60c3
Untitled Abstract: No abstract text available Text: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	PDF	HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC
12n60c Abstract: No abstract text available Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	PDF	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c

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24A GT Search Results

24A GT Result Highlights (5)

24A GT Price and Stock

Samtec Inc ICO-624-AGT

Samtec Inc ICA-324-AGT

Samtec Inc ICA-624-AGT

Samtec Inc ICO-324-AGT

YAGEO Corporation SMEJ24AG-TR7

24A GT Datasheets Context Search

finder 81.11

Untitled

Untitled

1E14

1E14

p12n60c3

Untitled

p12n60c3

Untitled

FDA24N50F

FDA24N50F

fda24n50f

TA49188

Untitled

N-Channel mosfet 400v

N-Channel mosfet 400v 24A

FDA24N50

TA49392

Untitled

12N60C3

12n60c

g12n60c3d

Untitled

12n60c