KY2 y0
Abstract: KX 001 TOUCH SCREEN MCU a2c0
Text: AN-1021 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com MMSE-Based Multipoint Calibration Algorithm for Touch Screen Applications by Ning Jia INTRODUCTION
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AN-1021
AN08183-0-7/09
KY2 y0
KX 001
TOUCH SCREEN MCU
a2c0
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Untitled
Abstract: No abstract text available
Text: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.
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D20MHzZ100MHzV300MHz
DZ200MHzV500MHz
D200MHz
20MHz
100MHzV300MHz
effective85M0
049M0
033M0
020M0
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Untitled
Abstract: No abstract text available
Text: NL27WZ126 Dual Buffer with 3-State Outputs The NL27WZ126 is a high performance dual noninverting buffer operating from a 2.3 V to 5.5 V supply. • • • • • • • • • Extremely High Speed: tPD 2.6 ns typical at VCC = 5 V Designed for 2.3 V to 5.5 V VCC Operation
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NL27WZ126
NC7WZ126
NL27WZ126
NL27WZ126US
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K4B4G0846D
Abstract: K4B4G0446D-MC DDR3-1866 RDIMM SPD JEDEC K4B4G0846D-MC
Text: Rev. 1.3, Jul. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M392B5773DH0
M392B5273DH0
M392B5270DH0
M392B1K70DM0
M392B1K73DM0
240pin
78FBGA
K4B4G0846D
K4B4G0446D-MC
DDR3-1866 RDIMM SPD JEDEC
K4B4G0846D-MC
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Untitled
Abstract: No abstract text available
Text: Rev. 1.3, Jul. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M392B5773DH0
M392B5273DH0
M392B5270DH0
M392B1K70DM0
M392B1K73DM0
240pin
78FBGA
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K4B4G0846D
Abstract: K4B4G0446D-MC k4b4g0446d DDR3-1866 RDIMM SPD JEDEC ddr3 so dimm 204 pin DDR3 DIMM 240 pin names cma 1390 rda 1846 K4B4G0846D-MC Design Guide for DDR3-1866
Text: Rev. 1.21, Jan. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M392B5773DH0
M392B5273DH0
M392B5270DH0
M392B1K70DM0
M392B1K73DM0
240pin
78FBGA
K4B4G0846D
K4B4G0446D-MC
k4b4g0446d
DDR3-1866 RDIMM SPD JEDEC
ddr3 so dimm 204 pin
DDR3 DIMM 240 pin names
cma 1390
rda 1846
K4B4G0846D-MC
Design Guide for DDR3-1866
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079J
Abstract: No abstract text available
Text: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.
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D20MHzZ100MHzV300MHz
DZ200MHzV500MHz
D200MHz
20MHz
100MHzV300MHz
079J
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K4B4G0446D-MC
Abstract: k4b4g0446d M393B5270DH0
Text: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M393B5773DH0
M393B5273DH0
M393B5270DH0
M393B1K70DH0
M393B1K73DH0
M393B2K70DM0
240pin
78FBGA
K4B4G0446D-MC
k4b4g0446d
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Untitled
Abstract: No abstract text available
Text: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M393B5773DH0
M393B5273DH0
M393B5270DH0
M393B1K70DH0
M393B1K73DH0
M393B2K70DM0
240pin
78FBGA
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BKP1005
Abstract: HS1215 HS121 P249 P258 BKP2125
Text: 電源用積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS FOR POWER SUPPLY LINES BK SERIES P TYPE –55V+85C OPERATING TEMP. ＊BKP1005を除く ＊Except for BKP1005 特長 FEATURES YLow Rdc value brings about low power dissipation and extending the life of
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BKP1005
BKP1005
YUSBIEEE1394
IEEE1394
BKP1608
f0603g
063M0
031M0
012M0
HS1215
HS121
P249
P258
BKP2125
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intel 2102 Static RAM
Abstract: M2102A 2107B-6 abb inverter manual acs 800 display 1602A M3101 D1 intel 8008 cpu LCD display 1602A
Text: in t e l' d a t a c a t a l o g Intel Corporation 3065 Bowers Ave. Santa Clara, C A 95051 Tel: 408/246-7501, T W X: 910-338-0026, Telex: 34-6372 1. INDEXES & GENERAL INFORMATION contents Page 1. 2. Indexes and General Information . 1-1
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1024Hz
intel 2102 Static RAM
M2102A
2107B-6
abb inverter manual acs 800
display 1602A
M3101 D1
intel 8008 cpu
LCD display 1602A
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FCK101
Abstract: 7400N FCL101 fch 191 7402N 7420N FJH101 FJH111 FJH121 FJH131
Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. T T L range D TL range -RC 206 -RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 M ullard comparable
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7400N
FJH131
FCL101
FJH231
7402N
FJH221
FJH121
7420N
FJH111
7430N
FCK101
fch 191
FJH101
FJH111
FJH121
FJH131
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Untitled
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUITS NTE1649 Telephone Ringer, V qc = 29V max 8-Lead DIP, See Diag. 246 NTE1650 28-Lead DIP, See Diag, 251 Video Signal Processor w/Auto Flesh Control, VCC = 15V Peaking C a pa cito r A C C D etector C o lo r C ontrol K ille r D etector
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NTE1649
NTE1650
28-Lead
NTE1655
NTE1662
16-Lead
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BF246
Abstract: tic 246 h BF 246 tic 246 in 5 246 b BF 246 A
Text: I 2SC D • 023SbOS QQQM4b4 T « S I E G N-Channel Junction Field-Effect Transistors BF 246 A 25C 0 4 4 6 4 S IE M E N S D A K T IE N G E S E L L S C H A F SE2Î2 5 B F246C BF 2 4 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar
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023SbOS
F246C
B--07
23Sb05
QGQ44bb
BF246
tic 246 h
BF 246
tic 246
in 5 246 b
BF 246 A
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MO-153-ABT
Abstract: No abstract text available
Text: 1.00 • 01.00 s CD MMDN DIMENSIDNS r N B □ L A A, As b bl Y c cl EXPOSEDDIE PAD D E TDP V IE W [HI—- t M 4j=y=fl JKU=U=:=tf -D - H L N BDTTDM V IE W t r * Y A l^ o ,io | c | / 7 \ t \ '—SEATING V f . yn Y oc < r \ -^ -/ - E
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MO-153
MO-153,
MO-153-ABT
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Untitled
Abstract: No abstract text available
Text: A N A LO G ► D E V IC E S General Purpose Input Isolation Amplifier AD102/AD 104 FEATURES Integral Isolated Power Supply 500 V rms CMV Isolation Rating High Accuracy: ±0.05% Max IMonlinearity Small SIP Style Footprint Lowest Priced Isolation Amplifiers
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AD102/AD
202/A
AD102/ADI
AD102
AD104
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MT1257-15
Abstract: MT1257 MT1257-12 iris mote DNA 1005 1N3064 MARKING t06 BF 246 C equivalent M41256 MT125
Text: MIL-M-38510/24É 13 JANUARY 1987 MILITARY SPECIFICATION M I C R O C I R C U I T S , DIGITAL, NMOS, R AND OM A C C E S S MEM OR Y DRAM , 26 2,144 BIT DYN AMIC MONOLITKIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d for us e by all D e p a r t
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MIL-M-38510/24Ã
144/1-bit,
MIL-M-38510
256-cycle
MIL-M-38510/246
MT1257-15
MT1257
MT1257-12
iris mote
DNA 1005
1N3064
MARKING t06
BF 246 C equivalent
M41256
MT125
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES Small Size: 4 Channels/Inch Low Power: 35 m W AD204 High Accuracy: ±0.025% max N onlinearity (K Grade) High CMR: 130 dB (Gain = 100 V /V ) W ide Bandwidth: 5 kHz Full-Power (AD204) High C M V Isolation: ±2000 V pk Continuous (K Grade)
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AD204)
AC1060
AC1058
AD202
AD204
AD246
AC1058
AD246JY
AD246JN
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transformer vde 0551
Abstract: resistor 330 DGU524-32
Text: Ungeregelte Gleichstrom versorgungen Non-stabilized de power supplies dreiphasige Gleichstromversorgung DG5 dreiphasige Universalgleichstromvers. DGU5 three phase de power supply DG5 three phase universal de power supply DGU5 DG5 400/24-10 DGU5 24-16 Ausführung
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VDE0551,
IEC742
enclos33
transformer vde 0551
resistor 330
DGU524-32
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KM48V2104BS-L
Abstract: km48v2104bs
Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2M bit x 32 D ynam ic RAM high density m em ory module. The
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KMM332F203BS-L
KMM332F213BS-L
KMM332F203BS-L
KMM332F213BS-L
2Mx32
KMM332F20
72-pin
332F20
KM48V2104BS-L
km48v2104bs
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dd127
Abstract: No abstract text available
Text: SANYO SEMI CONDUCTOR CORP b3E D • 7T=J 7D71. DD1 2 7 M3 MTS « T S A J Ordering number : EN 3915 M LC74HC137 N o .3915 C M O S High-Speed S ta n d ard Logic i l-of-8 Decoder/Demultiplexer with A ddress Latch F eatu res • The M L C 74H C 13 7 decodes a three-bit a d d ress to one-of-eight active-low outputs. It has latches on the
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LC74HC137
74LS137)
GQlE74b
MLC74HC137
dd127
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76308
Abstract: 036 906 051
Text: Features • Highly reliable dual metal PV contact for modular and programming applications. • Stackable end-to-end and side to side. • For parallel and right-angle p.c. board mounting. • Mates with 0,64 mm 0.025 inch square and round pins. Spacing
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tl555
Abstract: ic CD 4047 AD200 AD1021 ad200 op amp AD1021A
Text: ANALOG DEVICES General Purpose Input Isolation Amplifier AD102/AD104 FEATURES I n t eg r al I sol at ed P o w e r S u p p l y 500 V r m s CM V I s o l a t i on Ra t i ng 100% T es t ed FUNCTIONAL BLOCK DIAGRAM Hi gh A c c u r a c y : ± 0. 05 % M a x N o n l i n e a r i t y
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AD102/AD104
AD202/AD204
AD210
tl555
ic CD 4047
AD200
AD1021
ad200 op amp
AD1021A
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Untitled
Abstract: No abstract text available
Text: SANYO S E MI CONDUCT OR CORP b3E ]> 7TT7D?b GQ127H7 Q4Ü « T S A J O rdering nu m b er: EN3 9 1 6 MLC74HC137M No.3916 C M O S H ig h -S p e e d S ta n d a r d Logic l-of-8 Decoder/Demultiplexer with Address Latch F eatu res • T h e M L C 7 4H C 137 M decodes a th r e e -b it a d d re s s to one-of-eight active-low o u tp u ts . It h a s la tc h e s on
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GQ127H7
MLC74HC137M
74LS137)
D01S7SD
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