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    245IS Search Results

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    Microchip Technology Inc PIC16F15245-I-SS

    IC MCU 8BIT 14KB FLASH 20SSOP
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    DigiKey PIC16F15245-I-SS Tube 1,580 1
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    Microchip Technology Inc PIC16F15245-I-SO

    IC MCU 8BIT 14KB FLASH 20SOIC
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    DigiKey PIC16F15245-I-SO Tube 538 1
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    Analog Devices Inc LT1245IS8-PBF

    IC REG CTRLR BUCK 8SOIC
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    DigiKey LT1245IS8-PBF Tube 22 1
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    Analog Devices Inc LT1245IS8-TRPBF

    IC REG CTRLR BUCK 8SOIC
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    DigiKey LT1245IS8-TRPBF Reel 2,500
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    Red Lion Controls DAS00PN2245IS000

    DSP/MC RS232/485 CARD
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    DigiKey DAS00PN2245IS000 Bulk 1
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    245IS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Â B V I î » A e ro s p a c e /R u g g e d :zöd Printed Circuit Board C o nnectors Catalog 296 350 Issued 9 -9 7 4-Row Receptacle A s s e m b l ie s .060 T I H o u s in g M a t e r ia l f^ciyp t'eilylen:.-: .is o [3.31 s.illirlf; pet MIL M 245IS nr type


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    PDF 245IS G-LCP-30 1-800-f

    Untitled

    Abstract: No abstract text available
    Text: IS93C46 '. d ISSI i 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs


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    PDF IS93C46 1024-BIT 733-ISSI 245-ISSI

    Untitled

    Abstract: No abstract text available
    Text: ISSI PRELIMINARY 2048-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs


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    PDF 2048-BIT 733-ISSI 245-ISSI

    61C416

    Abstract: IS61C416
    Text: IS 61C416 ISSI v ili 4K X 16 HIGH SPEED CMOS CACHE RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time - 2 5 ,3 5 ,45ns Max. • Designed for 80386 Cache system: 25ns - 33MHz 35ns - 25MHz 45ns - 20MHz The ISSI IS61C416 is a very high speed, low power, 4096


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    PDF 61C416 33MHz 25MHz 20MHz IS61C416 33MHz. IS61C416-25L 61C416

    733-ISSI

    Abstract: No abstract text available
    Text: 16KX1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20,25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10(iW (Typical) CMOS standby (L-version) • Fully static operation-no clock or refresh required


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    PDF 16KX1 200mW power-55mW IS61C67 61C67 IS61C67-15N IS61C67-L15N IS61C67-20N IS61C67-L20N IS61C67-25N 733-ISSI

    61C30

    Abstract: 82385
    Text: IS 61C308 2 X 2K X 16 HIGH SPEED CMOS CACHE RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed acces time - 2 5 ,3 5 ,45ns Max. • Designed for 80386 Cache system: 25ns - 33MHz 35ns - 25MHz 45ns - 20MHz The ISSI IS61C308 is a high speed, low power, two banks of


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    PDF 61C308 33MHz 25MHz 20MHz 9/11/15ns 82C307/82C327 IS61C308 2048-word 16-bit 61C30 82385

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly


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    PDF 61C68 200mW power-55mW IS61C68 IS61C68-15N IS61C68-L15N IS61C68-20N IS61C68-L20N

    IS61C67-15N

    Abstract: 733-ISSI
    Text: HH -gli IS 61C67 ISSI 1 6 KX1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20,25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10|iW (Typical) CMOS standby (L-version)


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    PDF 61C67 200mW power-55mW IS61C67 IS61C67-15N IS61C67-L15N IS61C67-20N IS61C67-L20N 733-ISSI

    62c1024

    Abstract: IS62C1024 CE121
    Text: IS 62C1024 ISSI 'm s*' ? 128K X 8 LOW POWER CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • The ISSI IS62C1024 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol­


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    PDF 62C1024 time-70 100ns power-10 IS62C1024 IS62C1024-70W IS62C1024-L70W IS62C1024-85W IS62C1024-L85W 62c1024 CE121

    OF sk 733

    Abstract: 93C66 93c66 issi f 93c66 txal IS61C416 chip 8-pin 93C66 IS93C66
    Text: ISSI IS93C66 4096-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs


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    PDF IS93C66 4096-BIT 733-ISSI 245-ISSI OF sk 733 93C66 93c66 issi f 93c66 txal IS61C416 chip 8-pin 93C66 IS93C66

    61c1024

    Abstract: IS61C1024
    Text: IS 61C1024 128K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY SEPTEMBER 1990 DESCRIPTION FEATURES The ISSI IS 6 lC l0 2 4 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol­


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    PDF 61C1024 power-400mW power-50 50jiW IS61C1024-S35W IS61C1024-L35W IS61C 1024-S45 IS61C1024-S55W 61c1024 IS61C1024

    82C481

    Abstract: 82C381 opti 82C481 OPTI 82C281 FACT521A opti 82c381
    Text: IS 61C81 j ISSI •v!! ■ :/iÀ 8K X 8 - BIT CACHE TAG CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • • • • The ISSI IS61C81 is a very high speed cache address comparator sub-system consisting of a 65,536-bit static RAM organized as 8K x 8. Cycle Time and Compare Access Time


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    PDF 61C81 500mW 82C281 82C381 82C481 FACT521A IS61C81 IS61C81-20N IS61C81-20J IS61C81-L20N opti 82C481 OPTI 82C281 opti 82c381

    Untitled

    Abstract: No abstract text available
    Text: ISSI •T 3T 51 *• > 1 IS 61C816 2 x 4K x 16, 8K X 16 HIGH SPEED CMOS CACHE RAM OCTOBER1990 DESCRIPTION FEATURES • PRELIMINARY The ISSI IS61C816 is fabricated by the double layer polysili­ con, double layer metal CMOS technolgy. It is specifically designed to provide direct interface to the 80386 32-bit CPU


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    PDF 61C816 33MHz 25MHz 20MHz OCTOBER1990 IS61C816 32-bit IS61C816-25L

    93C46 CMOS Serial Electrically Erasable PROM

    Abstract: 93c46 LN 93c46 st IS93C46 chip 8-pin 93C46 ISSI 93C46
    Text: IS93C46 ISSI * 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY PRELIMINARY August 1990 PIN CONFIGURATIONS FEATURES • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs


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    PDF IS93C46 1024-BIT 733-ISSI 245-ISSI 93C46 CMOS Serial Electrically Erasable PROM 93c46 LN 93c46 st IS93C46 chip 8-pin 93C46 ISSI 93C46

    Untitled

    Abstract: No abstract text available
    Text: ISS 3 4K X 4-BIT CACHE-TAG CMOS STATIC RAM OCTOBER 1990 FEATURES DESCRIPTION • Very High Speed -1 2 ,1 5 , 20ns Max. • Fast output enable (tOE) for cache applications • CMOS Low Power Operation The ISSI IS61C180 is a high-speed, low power 4096 words by 4 bit static RAM. It is fabricated using ISSI's high


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    PDF IS61C180 61C180 IS61C180-12N IS61C180-15N IS61C180-20N 733-ISSI 245-ISSI

    IS61C66-20N

    Abstract: No abstract text available
    Text: ISSI IS 61C66 16KX4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C66 is a very high speed, low power, 16384 words by 4 bit static RAM. The device is fabricated using ISSI's high performance CMOS double metal technology.


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    PDF 61C66 16KX4 400mW 25n-W IS61C66 IS61C66-15N IS61C66-L15N IS61C66-20N IS61C66-L20N

    61c64

    Abstract: IS61C64-S20W IS61C64-S20N IS61C64 IS61C64-S20P
    Text: ISSI IS61C64_ U 8K X 8 HIGH SPEED CMOS STATIC RAM FEATURES • • • • • • • • • • Very High Speed - 20, 25, 30 ns Max. Fast output enable (tOE) for cache applications Automatic power-down when chip is deselected CMOS Low Power Operation


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    PDF 400mW IS61C64 IS61C64-L25N IS61C64-L25P IS61C64-L25W IS61C64-S30N IS61C64-S30P IS61C64-S30W IS61C64-L30N IS61C64-L30P 61c64 IS61C64-S20W IS61C64-S20N IS61C64-S20P

    61c88

    Abstract: No abstract text available
    Text: ISSI IS 61C88 16K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • • The ISSI IS61C88 is a very high speed, low power, 16384 words by 4 bit static RAM. The device is fabricated using ISSI's high performance CMOS double metal technology.


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    PDF 61C88_ 400mW IS61C88 IS61C88-L20N IS61C88-L20J IS61C88-25N IS61C88-25J IS61C88-L25N IS61C88-L25J IS61C88-30N 61c88

    62C256

    Abstract: No abstract text available
    Text: IS 62C256 ISSI - JïOv* 32K X 8 LOW POWER CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • Fast Access Time: 8 0 ,1 0 0 ,120ns max. • Low Power Dissipation Standby (CMOS): 10nW(typ.) Operating: 250mW (max.) The ISSI IS62C256 is a high speed, low power, 32,768-word


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    PDF 62C256 120ns 250mW IS62C256 768-word IS62C256-80W IS62C256-100W IS62C256-120W 62C256

    Untitled

    Abstract: No abstract text available
    Text: IS 62C1024 128K X 8 LOW POWER CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION Low active power- 75mW Typical High speed access tim e-70,8 5 ,100ns (Max.) Low standby power-1 O^iW (Typical) CMOS standby (L-version) Output enable and two chip enable inputs for ease


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    PDF 62C1024 100ns IS62C1024 IS62C1024-70W IS62C1024-L70 IS62C1024-85W IS62C1024-L85W IS62C1024-100W

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS93C66 4096-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs


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    PDF IS93C66 4096-BIT 733-ISSI 245-ISSI

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS93C46-3 1024-BIT SERIAL 3V TO 5V ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — 3V to 5V operation — Full TTL compatible inputs and outputs


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    PDF IS93C46-3 1024-BIT 733-ISSI 245-ISSI

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 61C88 16K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • Very High Speed - 15, 20, 25, 30 ns Max. • Fast output enable (tDOE) for cache applications • • Automatic power-down when chip is deselected CMOS Low Power Operation


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    PDF 61C88 IS61C88 IS61C88has isIS61C88-L30J 733-ISSI 245-ISSI

    IS61C64-25N

    Abstract: IS61C64-20N 61c16 IS61C64-25J IS61C64-20 IS61C64
    Text: ISST 2K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • The ISSI IS61C16 is a very high speed, low power, 2048 words by 8 bit static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly


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    PDF IS61C16 61C16 IS61C64-20N IS61C64-20J IS61C64-L20N IS61C64-L20J IS61C64-25N IS61C64-25J IS61C64-L25N 61c16 IS61C64-20 IS61C64