32P05T
Abstract: No abstract text available
Text: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA32P05T
IXTP32P05T
O-263
32P05T
1-22-10-A
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IXTH96P085T
Abstract: ixtp96 IXTP96P085T 96P085T DS1000-25
Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA96P085T IXTP96P085T IXTH96P085T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 85V - 96A Ω 13mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings
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IXTA96P085T
IXTP96P085T
IXTH96P085T
O-263
O-220
IXTA96P085T
96P085T
IXTH96P085T
ixtp96
IXTP96P085T
DS1000-25
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IXTA120P065T
Abstract: IXTH120P065T IXTH120 120P065T IXTP120P065T P-CHANNEL 25A TO-247 POWER MOSFET
Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA120P065T IXTP120P065T IXTH120P065T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 65V - 120A Ω 10mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings
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IXTA120P065T
IXTP120P065T
IXTH120P065T
O-263
O-220
IXTA120P065T
120P065T
IXTH120P065T
IXTH120
IXTP120P065T
P-CHANNEL 25A TO-247 POWER MOSFET
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IXTA76P10T
Abstract: ixth76p10t 76P10T DIODE 76A IXTP76P10T
Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA76P10T IXTP76P10T IXTH76P10T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 100V - 76A Ω 24mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings
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IXTA76P10T
IXTP76P10T
IXTH76P10T
O-263
O-220
IXTA76P10T
76P10T
ixth76p10t
DIODE 76A
IXTP76P10T
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140P05T
Abstract: IXTH140P05T IXTA140P05T IXTP140P05T P-CHANNEL 25A TO-247 POWER MOSFET
Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA140P05T IXTP140P05T IXTH140P05T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 50V - 140A Ω 8mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTA140P05T
IXTP140P05T
IXTH140P05T
O-263
IXTA140P05T
140P05T
IXTH140P05T
IXTP140P05T
P-CHANNEL 25A TO-247 POWER MOSFET
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IXTH140P05T
Abstract: IXTA140P05T IXTP140P05T P-CHANNEL 25A TO-247 POWER MOSFET PF6-40 123B16
Text: Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 = = ≤ RDS on - 50V - 140A Ω 9mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS
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IXTA140P05T
IXTP140P05T
IXTH140P05T
O-263
IXTA140P05T
140P05T
IXTH140P05T
IXTP140P05T
P-CHANNEL 25A TO-247 POWER MOSFET
PF6-40
123B16
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44P15T
Abstract: IXTP44P15T ixta44p15t IXTA44 IXTP44 TO-3P weight
Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T P-Channel Enhancement Mode Avalanche Rated - 150V - 44A Ω 65mΩ TO-3P IXTQ S (TAB) G D S G (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C - 150
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IXTA44P15T
IXTP44P15T
IXTQ44P15T
IXTH44P15T
O-220
O-263
IXTA44P15T
IXTQ44P15T
44P15T
IXTP44P15T
IXTA44
IXTP44
TO-3P weight
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
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IXGA16N60B2
Abstract: IXGP16N60B2
Text: HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 1.95V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES
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IC110
IXGA16N60B2
IXGP16N60B2
O-263
16N60B2D1
IXGA16N60B2
IXGP16N60B2
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES
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IC110
IXGA16N60B2
IXGP16N60B2
O-263
O-220)
16N60B3D1
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IXGA16N60B2
Abstract: IXGP16N60B2 16N60B
Text: HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES
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IC110
IXGA16N60B2
IXGP16N60B2
O-263
O-220)
O-263)
16N60B3D1
IXGA16N60B2
IXGP16N60B2
16N60B
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IXGH24N60C4D1
Abstract: 24N60C4D1 G24N60
Text: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM
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IXGH24N60C4D1
IC110
O-247
IF110
24N60C4D1
IXGH24N60C4D1
G24N60
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600TD
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60A3
IXGP48N60A3
IXGH48N60A3
IC110
O-263
O-220
O-247
062in.
48N60A3
0-08-A
600TD
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60A3
IXGP48N60A3
IXGH48N60A3
IC110
O-263
48N60A3
0-08-A
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24N60C4D1
Abstract: G24N60
Text: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM
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IC110
IXGH24N60C4D1
O-247
IF110
24N60C4D1
G24N60
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IXGP48N60A3
Abstract: IXGH48N60a3 IXGH48N60 IXGA48N60A3
Text: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60A3
IXGP48N60A3
IXGH48N60A3
IC110
O-263
IC110
O-220
O-247
48N60A3
0-08-A
IXGH48N60a3
IXGH48N60
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IXGP20N120B3
Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Text: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
IXGP20N120B3
IXGP20N120B
IXGA20N120B3
IXGA20N120B
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Untitled
Abstract: No abstract text available
Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
O-263
O-220AB
20N120A3
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IXGH12N120A3
Abstract: IXGH12N120 IXGP12N120A3 G12N120
Text: IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 GenX3TM 1200V IGBTs High Surge Current VCES = 1200V = 12A IC90 VCE sat ≤ 3.0V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA12N120A3
IXGP12N120A3
IXGH12N120A3
O-263
O-220AB
O-247
12N120A3
IXGH12N120A3
IXGH12N120
G12N120
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Untitled
Abstract: No abstract text available
Text: GenX3TM 1200V IGBTs VCES = 1200V IC90 = 12A VCE sat ≤ 3.0V IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA12N120A3
IXGP12N120A3
IXGH12N120A3
O-263
O-220AB
12N120A3
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ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Text: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions
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125OC
100ms
ixf55n50
50N50
24 volts 100 amperes smps
9 NA STR 2005
125OC
eco-pac
PSMG50
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH30N65C3
IC110
20-60kHz
O-247
30N65C3
4D-R47)
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48n60
Abstract: IXGH48N60 IXGH48N60A3 IXGA48N60A3 48N60A3 IXGP48N60A3 1660I C5036
Text: GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60A3
IXGH48N60A3
IXGP48N60A3
IC110
O-263
O-247
O-220
48N60A3
7-10-08-A
48n60
IXGH48N60
IXGH48N60A3
IXGA48N60A3
IXGP48N60A3
1660I
C5036
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode IXYH75N65C3H1 VCES = IC110 = VCE sat tfi(typ) = 650V 75A 2.3V 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES
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IXYH75N65C3H1
IC110
20-60kHz
O-247
IF110
75N65C3
71-R47)
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