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    23R1 Search Results

    23R1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJE4518823R1T Amphenol Communications Solutions Modular Jack - 8P8C, Vertical, Cat6, THR, No Panel Stops, Single Port, Shield With No Tabs, With LEDs Visit Amphenol Communications Solutions
    SLW23R-1C7LF Amphenol Communications Solutions 1.00mm Flex Connectors, SLW-R series, 23 Position, Side Entry ZIF Connector, 1mm (0.039inch) Pitch, Kinked Terminal, Lead-free Visit Amphenol Communications Solutions
    SFW23R-1STAE1LF Amphenol Communications Solutions 1.00mm Flex Connector, SFW-R series, 23 Position, Bottom side Contact, Side Entry Surface Mount ZIF Connector, Lead Free, Selective Gold plated Terminals with Tin-plate Solder-tail. Visit Amphenol Communications Solutions
    SFV23R-1STBE1HLF Amphenol Communications Solutions 0.50mm Flex Connector, SFV-R Series, 23 Position, Bottom Side Contact, Side Entry Surface Mount ZIF Connector, Halogen Free, Lead Free, Gold Flash. Visit Amphenol Communications Solutions
    RJE4A18823R1T Amphenol Communications Solutions Modular Jack - 8P8C, Vertical, Cat6A, THR, No Panel Stops, Single Port, Shield No EMI Tabs, With LEDs Visit Amphenol Communications Solutions
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    23R1 Price and Stock

    Vishay Dale CRCW04023R16FKED

    RES SMD 3.16 OHM 1% 1/16W 0402
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    DigiKey CRCW04023R16FKED Digi-Reel 52,330 1
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    CRCW04023R16FKED Cut Tape 52,330 1
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    Murata Manufacturing Co Ltd NFM3DCC223R1H3L

    CAP FEEDTHRU 0.022UF 50V 1205
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    DigiKey NFM3DCC223R1H3L Cut Tape 12,482 1
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    NFM3DCC223R1H3L Digi-Reel 12,482 1
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    NFM3DCC223R1H3L Reel 8,000 4,000
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    Avnet Americas NFM3DCC223R1H3L Reel 16,000 10 Weeks 4,000
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    Mouser Electronics NFM3DCC223R1H3L 5,720
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    Newark NFM3DCC223R1H3L Cut Tape 4,810 10
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    Bristol Electronics NFM3DCC223R1H3L 16,375
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    TTI NFM3DCC223R1H3L Reel 40,000 4,000
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    Avnet Abacus NFM3DCC223R1H3L 12,000 11 Weeks 4,000
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    Chip1Stop NFM3DCC223R1H3L Cut Tape 34,217
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    Win Source Electronics NFM3DCC223R1H3L 260,062
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    Murata Manufacturing Co Ltd NFM3DPC223R1H3L

    CAP FEEDTHRU 0.022UF 50V 1205
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    DigiKey NFM3DPC223R1H3L Reel 12,000 4,000
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    Avnet Americas NFM3DPC223R1H3L Reel 10 Weeks 4,000
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    Mouser Electronics NFM3DPC223R1H3L 9,468
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    Bristol Electronics NFM3DPC223R1H3L 9,909
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    TTI NFM3DPC223R1H3L Reel 20,000 4,000
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    TME NFM3DPC223R1H3L 8,505 1
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    ComSIT USA NFM3DPC223R1H3L 20,000
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    Chip 1 Exchange NFM3DPC223R1H3L 16,690
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    NFM3DPC223R1H3L 12,690
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    Avnet Abacus NFM3DPC223R1H3L 52,000 11 Weeks 4,000
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    Chip1Stop NFM3DPC223R1H3L Cut Tape 12,847
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    New Advantage Corporation NFM3DPC223R1H3L 100,000 1
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    Win Source Electronics NFM3DPC223R1H3L 80,000
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    Laird, A DuPont Business CM1812B223R-1A

    CMC 22UH 310MA 2LN 1.2KOHM SMD
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    DigiKey CM1812B223R-1A Digi-Reel 7,940 1
    • 1 $1.11
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    CM1812B223R-1A Cut Tape 7,940 1
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    CM1812B223R-1A Reel 7,500 500
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    PanJit Group 1SMA5923_R1_00001

    SURFACE MOUNT SILICON ZENER DIOD
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    DigiKey 1SMA5923_R1_00001 Cut Tape 1,507 1
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    Chip1Stop 1SMA5923_R1_00001 Cut Tape 1,800
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    Ozdisan Elektronik 1SMA5923_R1_00001
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    23R1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TPCS8213

    Abstract: No abstract text available
    Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original     		TPCS8213 TPCS8213 PDF

    S8214

    Abstract: TPCS8214
    Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)


    Original     		TPCS8214 S8214 TPCS8214 PDF

    S8302

    Abstract: TPCS8302
    Text: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		TPCS8302 S8302 TPCS8302 PDF

    s8208

    Abstract: TPCS8208
    Text: TPCS8208 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8208 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 13 mΩ (標準)


    Original     		TPCS8208 s8208 TPCS8208 PDF

    s8211

    Abstract: TPCS8211
    Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8211 s8211 TPCS8211 PDF

    TPCS8006

    Abstract: No abstract text available
    Text: TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) •


    Original     		TPCS8006 TPCS8006 PDF

    s8208

    Abstract: TPCS8208
    Text: TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		TPCS8208 s8208 TPCS8208 PDF

    TPCS8102

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 TPCS8102 PDF

    TPCS8201

    Abstract: S8201
    Text: TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		TPCS8201 TPCS8201 S8201 PDF

    a3180

    Abstract: TPCS8303 TPCS83
    Text: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		TPCS8303 a3180 TPCS8303 TPCS83 PDF

    S8104

    Abstract: TPCS8104
    Text: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		TPCS8104 S8104 TPCS8104 PDF

    s8204

    Abstract: TPCS8204 S-8204
    Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)


    Original     		TPCS8204 s8204 TPCS8204 S-8204 PDF

    S8204

    Abstract: S-8204 TPCS8204
    Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)


    Original     		TPCS8204 S8204 S-8204 TPCS8204 PDF

    s8211

    Abstract: TPCS8211
    Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8211 s8211 TPCS8211 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHⅡπ-MOSⅤ TPCS8008-H High-Speed Switching Applications Switching Regulator Applications Unit: mm DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω (typ.)


    Original     		TPCS8008-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8101 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to small and thin package z Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		TPCS8101 PDF

    s8210

    Abstract: A/s8210
    Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		TPCS8210 s8210 A/s8210 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)


    Original     		TPCS8004 PDF

    s8105

    Abstract: No abstract text available
    Text: TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)


    Original     		TPCS8105 s8105 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		TPCS8104 PDF

    50R0500

    Abstract: 5SSB30X 5SSB30X0800 thyris
    Text: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering


    OCR Scan     		5SSA20R15 50X0400 38X0600 30X0800 26X2200 23X2400 23X2600 20X2800 20X3000 50R0500 5SSB30X 5SSB30X0800 thyris PDF

    50R0500

    Abstract: 5SSA20R1600 5SSA23R1300 5SSA38R0800 5SSA23R1400 30R1000 5SSA30R1000 abb traction motor 30R1 5SSA38R0700
    Text: Silicon Surge Voltage Suppressor 5SSA .R Series Doc. No. 5SYA1030-01 Nov.95 Features The 5SSA silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSA silicon surge voltage suppressors are best suited to protect power thyristors against small


    OCR Scan     		5SYA1030-01 50R0500 50R0600 38R0700 38R0800 30R0900 30R1000 26R10 30R1000 5SSA20R1600 5SSA23R1300 5SSA38R0800 5SSA23R1400 5SSA30R1000 abb traction motor 30R1 5SSA38R0700 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Abb breakover diode

    Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
    Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >


    OCR Scan     		VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800 PDF