GaAs SPDT
Abstract: SW-239-PIN SW-239 spdt switch SW-239TR SW-239RTR SW239PIN SW239
Text: GaAs SPDT Switch DC-2.5 GHz SW-239 V 2.01 Ordering Information Model No. Package SW-239 PIN SW-239TR SW-239RTR SOIC 8 Lead Forward Tape & Reel Reverse Tape & Reel GaAs SPDT Switch SW-239 V 2.01
|
Original
|
SW-239
SW-239
SW-239TR
SW-239RTR
GaAs SPDT
SW-239-PIN
spdt switch
SW-239TR
SW-239RTR
SW239PIN
SW239
|
PDF
|
HD6413003F16
Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Text: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744
|
Original
|
ZM33064C
ZSD1000D8
TD300IN
TSH10IN
TSH11IN
TS271CN
TS274ID
TS902IN
TS912IN
TS3V393IN
HD6413003F16
hd6413002f16
HD6473042F16
TL084-LM324
piezo autotransformer
HD6413004F16
HD6413005F16
laptop inverter SCHEMATIC TRANSISTOR
6N138 SPICE
HD6413003F-16
|
PDF
|
transistor 9751
Abstract: LT1424 LT1425 LT1737
Text: RELIABILITY DATA LT1424 / LT1425 / LT1737 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SOIC/SOT/MSOP 231 9640 231 • PRESSURE COOKER TEST AT 15 PSIG, +121°C PACKAGE TYPE SAMPLE SIZE PLASTIC DIP SOIC/SOT/MSOP 249 239 488 • TEMP CYCLE FROM -65°C to +150°C
|
Original
|
LT1424
LT1425
LT1737
00-03-6209B.
transistor 9751
LT1737
|
PDF
|
SW-239TR
Abstract: M513 SW-239
Text: GaAs SPDT Switch DC - 2.5 GHz SW-239 V6 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP3 Nanosecond Switching Speed
|
Original
|
SW-239
SW-239
SW-239TR
M513
|
PDF
|
SW-239TR
Abstract: SW239/7
Text: GaAs SPDT Switch DC - 2.5 GHz SW-239 V4 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 50 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed
|
Original
|
SW-239
SW-239TR
SW239/7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs SPDT Switch, DC - 2.5 GHz SW-239 V3 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 50 mW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed
|
Original
|
SW-239
|
PDF
|
SW-239TR
Abstract: SW SPDT M513 SW-239
Text: SW-239 GaAs SPDT Switch DC - 2.5 GHz Rev. V6 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP3 Nanosecond Switching Speed
|
Original
|
SW-239
SW-239
SW-239TR
SW SPDT
M513
|
PDF
|
M513
Abstract: SW-239 SW-239TR
Text: SW-239 GaAs SPDT Switch DC - 2.5 GHz Rev. V4 Features • Functional Schematic Very Low DC Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP3 Nanosecond Switching Speed
|
Original
|
SW-239
SW-239
M513
SW-239TR
|
PDF
|
RF-IF High Frequency
Abstract: high frequency mixer rf mixer 200-250 mhz RF Mixer for 200-250 MHz JESD22-A114 J-STD-020B MH203 MH203-PCB
Text: MH203 The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Features • • • • • • • +32 dBm IIP3 RF 800 – 960 MHz IF 200 – 350 MHz High-side LO configuration +17 dBm Drive Level Low Cost SOIC-8 Package No External Bias Required
|
Original
|
MH203
MH203
JESD22-C101
JESD22-A114
J-STD-020B
1-800-WJ1-4401
RF-IF High Frequency
high frequency mixer
rf mixer 200-250 mhz
RF Mixer for 200-250 MHz
JESD22-A114
J-STD-020B
MH203-PCB
|
PDF
|
JESD22-A114
Abstract: J-STD-020B MH203 MH203-PCB
Text: MH203 High Linearity Cellular-Band MMIC Mixer Product Features • • • • • • • • +32 dBm IIP3 RF 800 – 960 MHz IF 200 – 350 MHz ISO & EPC compliant High-side LO configuration +17 dBm Drive Level Low Cost SOIC-8 Package No External Bias Required
|
Original
|
MH203
MH203
JESD22-C101
JESD22-A114
J-STD-020B
WJ1-4401
JESD22-A114
J-STD-020B
MH203-PCB
|
PDF
|
LTC6101
Abstract: R503
Text: RELIABILITY DATA LTC6101 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE NEWEST DATE CODE SOIC/SOT/MSOP 77 0502 77 • PRESSURE COOKER TEST AT 15 PSIG, +121°C PACKAGE TYPE SAMPLE SIZE SOIC/SOT/MSOP 188 188 • TEMP CYCLE FROM -65°C to +150°C
|
Original
|
LTC6101
00-03-6209B.
LTC6101
R503
|
PDF
|
25804
Abstract: No abstract text available
Text: RELIABILITY MONITOR DS1000Z-25 OCT '00 MONITOR DEVICE REVISION DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 150x1.4 OSEP 0033 PROCESS Single Poly, Single Metal DE009456ACE 8 SOIC 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7 β: 1
|
Original
|
DS1000Z-25
DS1000
DE009456ACE
150x1
DS87C520
DE029195AAB
650x65
25804
|
PDF
|
DALLAS DS80C320
Abstract: 25863
Text: RELIABILITY MONITOR DS1232L JAN '00 Monitor DEVICE REVISION DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1232 C2-L 150 9948 PROCESS Single Poly, Single Metal DK933191AAJ 8 SOIC ATP Anam, PI 0.8 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7
|
Original
|
DS1232L
DS1232
DK933191AAJ
HRS87C520
DS87C520
DE013425AAD
J-STD-020
30C/60%
DALLAS DS80C320
25863
|
PDF
|
25821
Abstract: dallas date code ds12887 25854
Text: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 MAR '00 25224 9950 OSEP DE940040AAC SOIC 50 50 DS1869 A3 JUN '00 25547 0017 CPS ChipPac, China DH833210AAB SOIC
|
Original
|
DS1621
DS1869
DE940040AAC
DH833210AAB
DS2181A
DS5002
DE004552ABD
DN012259AAL
DN028766AAD
25821
dallas date code ds12887
25854
|
PDF
|
|
|
JSTD-020
Abstract: DM035 26438
Text: RELIABILITY MONITOR DS1232L JAN '01 MONITOR REVISION DATE CD LOT NUMBER PINS PACKAGE 0051 DK038265AAC 8 C2-L SOIC PROCESS Single Poly, Single Metal 0.8 µm Standard Process DEVICE DS1232 WIDTH ASSEMBLY SITE 150x1.4 ATP Anam, PI JOB NO DESCRIPT Cf: 60% Ea: 0.7
|
Original
|
DS1232L
DK038265AAC
DS1232
J-STD-020
85C/85%
14x20x
DS80CH11
DS80CH11
DN034351AA
JSTD-020
DM035
26438
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPDT Reflective Switch ITT239AB FEATURES • • • • • • • SOIC-8 package High Isolation 34 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors Pin-for-pin compatible with standard “239” reflective switches
|
Original
|
ITT239AB
ITT239AB
|
PDF
|
ITT239AB
Abstract: DC-10 High Isolation Reflective SPDT Switch
Text: SPDT Reflective Switch ITT239AB FEATURES • • • • • • • SOIC-8 package High Isolation 34 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors Pin-for-pin compatible with standard “239” reflective switches
|
Original
|
ITT239AB
ITT239AB
DC-10
High Isolation Reflective SPDT Switch
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Package Number 239 - 24-Lead SOIC |- $ - | .0 1 Q - 2 5 ( m ) I B ( M ) l IN D EX " AREA D E T A IL 1 BASE PLA N E D S E A T IN G PLAN E 12 ” A” —A1 1 uuuuuu MMMMM .0. T - | - -
|
OCR Scan
|
24-Lead
ZZ239
|
PDF
|
AD239-12
Abstract: No abstract text available
Text: GaAs 1C 3 Bit Digital Attenuator 4 dB LSB Positive Control 0.75-2 GHz ESAlpha A D 239-12 Features SOIC-8 • Attenuation in 4 dB Steps to 28 dB with High Accuracy PIN 8 ■ Single Positive Control Voltage for Each Bit M 0.050 1.27 mm BSC 0.244 (6.20 mm)
|
OCR Scan
|
AD239-12
3/99A
|
PDF
|
SCR POWER CONTROL
Abstract: DS1239 DS1236 DS1239-5
Text: DS1239 DALLAS ds1Chip 239 MicroManager s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • Provides necessary control for start up and shutdown of power supply from keyboard vbat [ v cco [ vcc[ • Holds microprocessor in check during power transients 16
|
OCR Scan
|
DS1239
DS1239-5
DS1239.
DS1236
0012S24
SCR POWER CONTROL
DS1239
DS1239-5
|
PDF
|
AS239-12
Abstract: No abstract text available
Text: ES Alpha GaAs 1C SPDT Reflective Switch DC-2.5 GHz A S 239-12 Features SOIC-8 • Low Insertion Loss 0.4 dB @ 1 GHz PIN 8 ■ High Isolation (35 dB @ 1 GHz) 0.050 (1.27 mm) BSC M ■ General Purpose Switching 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 IN D IC A TO R -
|
OCR Scan
|
AS239-12
AS239-12
3/98A
|
PDF
|
sw239
Abstract: No abstract text available
Text: Afazcm w a n A M P com pany GaAs SPDT Switch DC-2.5 GHz SW-239 SO-8 Features • Very Low Power Consumption: 50 nW • Low Insertion Loss: 0.5 dB • High Isolation: 25 dB up to 2 GHz • Very High Intercept Point: 46 dBm IP 3 • Nanosecond Switching Speed
|
OCR Scan
|
SW-239
SW-239
sw239
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A fe GaAs SPDT Switch DC-2.5 GHz SW-239 SO-8 Features • Very Low Power Consumption: 50 pW • Low Insertion Loss: 0.5 dB • High Isolation: 25 dB up to 2 GHz • Very High Intercept Point: 46 dBm IP3 • Nanosecond Switching Speed 3 m 0 0 i i- Q l0 ( ° 2 5 ) ® i B <
|
OCR Scan
|
SW-239
SW-239
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs SPDT Switch DC-2.5 GHz SW-239 SO-8 Features • Very Low Power Consumption: 50 |iW • • .1497- 1574 High Isolation: 25 dB up to 2 GHz 3 f i q ° 0 l [ 0 1 0(0.25) I B © 1 1 • Very High Intercept Point: 46 dBm IP 3 • PIN 1 Nanosecond Switching Speed
|
OCR Scan
|
SW-239
SW-239
|
PDF
|
