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    Rochester Electronics LLC MAX2327EUP

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    Carling Technologies CLB-123-27ENN-W-A

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    Carling Technologies CLB-123-27ENN-B-A

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    Carling Technologies CLB-123-27E3N-W-A

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    Carling Technologies CLB-123-27E3N-W-R

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    2327E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A538f

    Abstract: No abstract text available
    Text: 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF E 6  8B8 66 RoHS 1324F 111AA 12342562789AB9 B CCCDE2FE25FDF5 서식번호 : SSC- QP- 7- 07- 12 Rev.00 123234567898ABCD426EEEEEEF426EEEEEE


    Original
    PDF 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF 12342562789AB9 F27C6B94BDE 358CE A538f

    Untitled

    Abstract: No abstract text available
    Text: 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF E 6  8B8 66 RoHS 1324F 111AA 12342562789AB9 B CCCDE2FE25FDF5 서식번호 : SSC- QP- 7- 07- 12 Rev.00 123234567898ABCD426EEEEEEF426EEEEEE


    Original
    PDF 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF 12342562789AB9 F27C6B94BDE 358CE

    7430 ic data sheet

    Abstract: MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor


    Original
    PDF LV2327E40R SCA53 127147/00/02/pp8 7430 ic data sheet MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original
    PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    D8742

    Abstract: No abstract text available
    Text: 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF E 6  8B8 66 RoHS 1324F 111AA 12342562789AB9 B CCCDE2FE25FDF5 서식번호 : SSC- QP- 7- 07- 12 Rev.00 123234567898ABCD426EEEEEEF426EEEEEE


    Original
    PDF 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF 12342562789AB9 F27C6B94BDE 358CE D8742

    Untitled

    Abstract: No abstract text available
    Text: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan
    PDF LV2327E40R bb53131 7Z88736 7Z88737

    IEC134

    Abstract: LV2327E40R transistor marking AR ghz TRANSISTOR marking ar code
    Text: -1-1- N AMER PHILIPS/DISCRETE ObE D ^53=131 ÜQ150G1 I 2327E40R r- 33-£>? MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a com m on-em itter class-A linear wideband power am plifier from 2 ,3 to 2 ,7 G Hz. Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan
    PDF kLi53' LV2327E40R GD150G4 7z88738 7z88737 IEC134 LV2327E40R transistor marking AR ghz TRANSISTOR marking ar code

    TRANSISTOR MARKING CODE NM

    Abstract: marking code m2 transistor LV2327E40R SC15 marking M2 NPN microwave transistor 03 2327E40R low voltage power transistor
    Text: Philips Semiconductors Product specification NPN microwave power transistor 2327E40R FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency class A circuit. • Diffused emitter ballasting resistors providing excellent current sharing


    OCR Scan
    PDF LV2327E40R OT445B OT445B. TRANSISTOR MARKING CODE NM marking code m2 transistor LV2327E40R SC15 marking M2 NPN microwave transistor 03 2327E40R low voltage power transistor

    2327E40R

    Abstract: T445B
    Text: Philips Semiconductors Product specification NPN microwave power transistor 2327E40R FEATURES QUICK REFERENCE DATA • interdigitated structure provides high emitter efficiency Microwave performance for Tcase = 25 °C in a wideband common-emitter class A circuit.


    OCR Scan
    PDF T445B LV2327E40R 2327E40R

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan
    PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips