ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
|
Original
|
PDF
|
NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
ULGA52
NAND08GW3B2C
ONFI nand flash
NAND04GW3B2DN6
NAND08G-B2C
NAND08GR3B4C
NAND08GW3B4C
|
LGA-52
Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage
|
Original
|
PDF
|
NAND04G-B2D,
NAND08G-BxC
byte/1056
LGA-52
LGA52
NAND LGA52
NAND08GW3B2C
NAND04GW3B2DN6
NAND08GW3B4C
NAND04GW4B2D
NAND08GR
NAND08GW
lga52 footprint
|
Untitled
Abstract: No abstract text available
Text: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.02 03/2014 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
|
Original
|
PDF
|
MC9S12ZVH-Family
HCS12
MC9S12ZVHRMV1
S12ZCPU
2013ry
|
Untitled
Abstract: No abstract text available
Text: Product data sheet Industrial MultiMedia Card M-1 Series A 3.31, 4.1, and 4.2 compliant Extended and industrial temperature grade B U: Date : Re vi si o n: Sw i ss b it Gr ou p 31 . Au gu st 20 1 1 1 .3 0 M -1 0 0_d at a_ she e t_ M M -O x B N_Re v1 3 0. do c
|
Original
|
PDF
|
CH-9552
Rev130
|
200V transistor npn 10a
Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
Text: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER
|
Original
|
PDF
|
2N3583
2N3584
2N3585
500mA
200mA,
100mA,
200V transistor npn 10a
transistor 200V 100MA NPN
200v 10a npn transistor
200V 100MA NPN
|
Untitled
Abstract: No abstract text available
Text: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.00 09/2013 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
|
Original
|
PDF
|
MC9S12ZVH-Family
HCS12
MC9S12ZVHRMV1
S12ZCPU
|
M50LPW080
Abstract: PLCC32
Text: M50LPW080 8 Mbit 1M x8, Uniform Block 3V Supply Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3.0 to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)
|
Original
|
PDF
|
M50LPW080
M50LPW080
PLCC32
|
Untitled
Abstract: No abstract text available
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
|
Original
|
PDF
|
NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
|
VDFPN8 package
Abstract: TBGA24
Text: M25PX16 16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features SPI bus compatible serial interface 75 MHz maximum clock frequency 2.3 V to 3.6 V single supply voltage Dual input/output instructions resulting in an
|
Original
|
PDF
|
M25PX16
16-Mbit,
64-Kbyte
64-byte
64-Kbyte)
VDFPN8 package
TBGA24
|
M25PX16
Abstract: No abstract text available
Text: M25PX16 16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features SPI bus compatible serial interface 75 MHz maximum clock frequency 2.3 V to 3.6 V single supply voltage Dual input/output instructions resulting in an
|
Original
|
PDF
|
M25PX16
16-Mbit,
64-Kbyte
64-byte
64-Kbyte)
M25PX16
|
AN2824
Abstract: STM32 stm32f100 stm32f105 errata stm32f105 STM32F10* I2C STM32F10* I2C errata stm32f105* errata STM32F101 DMA stm32
Text: AN2824 Application note STM32F10xxx I2C optimized examples Introduction The aim of this application note is to provide I2C firmware optimized examples based on polling, interrupts and DMA, covering the four I2C communication modes available in the STM32F10xxx, that is, slave transmitter, slave receiver, master transmitter and master
|
Original
|
PDF
|
AN2824
STM32F10xxx
STM32F10xxx,
STM32F101xx
STM32F103xx
STM32F105/107xx
STM32F100xx
STM32F10xxx.
AN2824
STM32
stm32f100
stm32f105 errata
stm32f105
STM32F10* I2C
STM32F10* I2C errata
stm32f105* errata
STM32F101
DMA stm32
|
M50LPW080
Abstract: PLCC32 PLCC32 package
Text: M50LPW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for
|
Original
|
PDF
|
M50LPW080
TSOP40
PLCC32
M50LPW080
PLCC32
PLCC32 package
|
Untitled
Abstract: No abstract text available
Text: M50LPW080 8 Mbit 1M x8, Uniform Block 3V Supply Low Pin Count Flash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3.0 to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast
|
Original
|
PDF
|
M50LPW080
|
FB6000
Abstract: No abstract text available
Text: M50FW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Firmware Hub (FWH) Interface for embedded
|
Original
|
PDF
|
M50FW080
PLCC32
TSOP40
FB6000
|
|
|
NAND04GB2D
Abstract: NAND04G-B2D
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
|
Original
|
PDF
|
NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
NAND04GB2D
NAND04G-B2D
|
RLR RESISTORS
Abstract: AA59569R36N0250 raychem AD-1377 AA59569R36N0171 RLR32C raychem ir-550 AA55517 AA59569R3 ad 1377 crimp tool raychem heat shrink 06090
Text: SPECIFICATION CONTROL DRAWING 1 SLEEVE, OUTER COVER, Qty/kit: 1 3) SLEEVE, INNER COVER, Qty/kit: 1 2) SLEEVE, INTERMEDIATE COVER, Qty/kit: 1 4) BRAID, OUTER, Qty/kit: 1 5) BRAID, Qty/kit: 1 6) SOLDERSLEEVE, Qty/kit: 2 7) SOLDERSLEEVE, Qty/kit: 2 8) SEALING SLEEVE, Qty/kit: see sht. 2, item 8
|
Original
|
PDF
|
D-150-0328-01
D-150-0328-02
D-150-0328-03
D-150-0328-04
AA5551704560G
RLR32C56R0GR
AA5551704152G
RLR32C1520GR
M39003/01-7107
AA5551704222G
RLR RESISTORS
AA59569R36N0250
raychem AD-1377
AA59569R36N0171
RLR32C
raychem ir-550
AA55517
AA59569R3
ad 1377 crimp tool
raychem heat shrink 06090
|
Untitled
Abstract: No abstract text available
Text: CWDM305P SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed
|
Original
|
PDF
|
CWDM305P
CWDM305P
C503P
22-June
|
Untitled
Abstract: No abstract text available
Text: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.03 06/2014 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
|
Original
|
PDF
|
MC9S12ZVH-Family
HCS12
MC9S12ZVHRMV1
S12ZCPU
|
Low pin count bus
Abstract: low pin count lpc
Text: M50LPW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for
|
Original
|
PDF
|
M50LPW080
TSOP40
PLCC32
Low pin count bus
low pin count lpc
|
Untitled
Abstract: No abstract text available
Text: DOC No. HX8664-B-DS HX8664-B 960CH TFT LCD Gate Driver Preliminary version 01 June, 2009 HX8664-B 960CH TFT LCD Gate Driver Preliminary Version 01 June, 2009 1. General Description The HX8664-B is a 960-channel outputs gate driver, which is used for driving the
|
Original
|
PDF
|
HX8664-B-DS
HX8664-B
960CH
HX8664-B
960-channel
200KHz
22June,
|
FFBC0100
Abstract: BIOS Flash ROM Chip datasheet M50LPW080 PLCC32
Text: M50LPW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for
|
Original
|
PDF
|
M50LPW080
TSOP40
PLCC32
FFBC0100
BIOS Flash ROM Chip datasheet
M50LPW080
PLCC32
|
el inverter
Abstract: MC33441 capacitor package Distributors and Sales Partners
Text: Order this publication as PBMC33441/D Semiconductor Components Group Analog, Logic and Discretes 22-June-1999 er IC s v i r D t mp Produc a L ent c able s t e r n o i lum ys in P o r t Elec ispla D CD for L Introduction The MC33441 Electroluminescent Lamp EL Driver IC is a DC-AC inverter
|
Original
|
PDF
|
PBMC33441/D
22-June-1999
MC33441
el inverter
capacitor package
Distributors and Sales Partners
|
LGA52
Abstract: NAND LGA52 LGA-52 ONFI 3.0 NAND08GW3B2C NAND04GW3B2dn6
Text: NAND04G-B2D, NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
|
Original
|
PDF
|
NAND04G-B2D,
NAND08G-BxC
2112-byte/1056-word
LGA52
NAND LGA52
LGA-52
ONFI 3.0
NAND08GW3B2C
NAND04GW3B2dn6
|
Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T CM 00 LTR DESCRIPTION DATE REVISED PER EC 0G3B-1099-04 22JUNE05 OWN APVD KW DB 1\ M A T E R IA L H O U S IN G : P O L Y A M I D E
|
OCR Scan
|
PDF
|
0G3B-1099-04
22JUNE05
21JUNZ005
21JUNEZ005
21JUNE2005
MTA-156
31MAR2000
|