Untitled
Abstract: No abstract text available
Text: D ECO-12-017358 22JAN13 CWR D D OBSOLETE OBSOLETE D D D
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ECO-12-017358
22JAN13
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Untitled
Abstract: No abstract text available
Text: V12W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V12W60C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V6WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V6WL45C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V6WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V6WM100C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
612-S
19-MAR-13
22-JAN-13
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PDF
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V10WM
Abstract: V10WM100
Text: V10WM100 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses
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Original
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V10WM100
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V10WM
V10WM100
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PDF
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MAL216099
Abstract: No abstract text available
Text: 160 CLA www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , High Temperature, Low Impedance FEATURES • Useful life for 2000 h at 150 °C • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free
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J-STD-020
AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MAL216099
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PDF
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Untitled
Abstract: No abstract text available
Text: V20W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V20W60C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V6W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V6W60C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: LVB14A www.vishay.com Vishay General Semiconductor Low VF Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Uni-directional polarity only • Peak pulse power: 600 W 10/1000 s • Ideal for automated placement • Low forward voltage
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LVB14A
J-STD-020,
DO-214AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V12WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V12WM100C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BYWE29-50 thru BYWE29-200 www.vishay.com Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time TO-220AC • Low switching losses, high efficiency • Low leakage current • High forward surge capability
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BYWE29-50
BYWE29-200
O-220AC
22-B106
BYWE29-XXX
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: V10WL45 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V10WL45
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Not For New Design EBC www.vishay.com Vishay Roederstein Aluminum Capacitors Axial Capacitor Style FEATURES • Long useful life: 3000 h at 105 °C • Polarized aluminum electrolytic capacitors • High ripple current capability • Axial leads, insulated cylindrical aluminum case
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: P6SMB Series www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional
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Original
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J-STD-020,
DO-214AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V20WL45 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V20WL45
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V15WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V15WL45C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STAINLESS STEEL QUALITY CLASS: 10000 MATING CYCLES ENVIRONMENTAL
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Original
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UL94-V0
100VAC
500VAC/MN
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PDF
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Untitled
Abstract: No abstract text available
Text: V15W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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Original
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V15W60C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TWX, TWXF www.vishay.com Vishay Draloric Watercooled RF Power Pot Capacitors External Cooling System FEATURES • High voltage, current, and power ratings • Compact design reduces terminal self inductance and permit operation up to higher frequencies • These pot capacitors feature increased density through
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: P2SMA130A thru P2SMA220A www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional 200 W peak pulse
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Original
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P2SMA130A
P2SMA220A
DO-214AC
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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NEM-QTSB-714PPNS-B
Abstract: No abstract text available
Text: D rg N o . CU76348Y METRIC 7 6 5 4 3 2 i 2-4-50-08 Rev G A3 NOTE 1. DIMENSIONS ARE NOMINAL UNLESS STATED OTHERWISE. 2. MATERIALS / FINISH BODY PARTS_ST. STEEL_ BLACK ELECTROLESS NICKEL OR ELECTROLESS NICKEL INSULATORS_ HIGH TEMPERATURE THERMOPLASTIC.
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OCR Scan
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CU76348Y
22AWG
76348Y
NEM-QTSB-714PPNS-B
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PDF
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Untitled
Abstract: No abstract text available
Text: Drg No. CU76360Y METRIC 1 2 3 5 6 7 ASTER KEY ASTER KEY ASTER KEY 14 WAY SCALE 2:1 4 2-4-10-08 Rov G A3 19 WAY SCALE 2:1 8 WAY NOTE 1. DIMENSIONS ARE NOMINAL UNLESS STATED OTHERWISE. 2. MATERIALS / FINISH :BODY PARTS_ ST. STEEL_ BLACK ELECTROLESS NICKEL OR ELECTROLESS NICKEL.
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OCR Scan
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CU76360Y
22AWG
76381Y)
22-Jan-13
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PDF
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