VS-8E2TX06-E
Abstract: No abstract text available
Text: VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • • • • • • • • • • 2L TO-220 FULL-PAK Base cathode 2 1 Cathode 3 Anode 2 Anode 1 Cathode VS-8E2TX06 DESCRIPTION/APPLICATIONS
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Original
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VS-8E2TX06-E,
VS-8E2TX06-M,
VS-8E2TX06FP-E
2002/95/EC
O-220AC
O-220
2011/65/EU
2002/95/EC.
2011/65/EU.
VS-8E2TX06-E
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PDF
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N2A-XX-S153R-35B
Abstract: No abstract text available
Text: 90° Patterns - Dual Grid Micro-Measurements Transducer-Class Strain Gages GAGE PATTERN Actual size shown. Enlarged when necessary for definition. inch DIMENSIONS RES. IN OHMS GAGE DESIGNATION See Note 1 STANDARD CREEP CODE millimeter ENCAPSULATION OPTION
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Original
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N2A-XX-S063Q-350
N2A-XX-S167R-350
N2K-XX-S015T-350/DP
N2K-XX-S184T-10C/DP
TK-XX-S015T-350/DP
TK-XX-S184T-10C/DP
22-Jan-10
N2A-XX-S153R-35B
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PDF
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Untitled
Abstract: No abstract text available
Text: TDSL31. Vishay Semiconductors Low Current 10 mm Seven Segment Display FEATURES • Low power consumption • Suitable for DC and multiplex operation • Evenly lighted segments • Grey package surface • Untinted segments • Luminous intensity categorized
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Original
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TDSL31.
2002/95/EC
2002/96/EC
TDSL31
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation
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Original
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VS-8E2TH06-E,
VS-8E2TH06-M,
VS-8E2TH06FP-E
2002/95/EC
O-220AC
O-220
VS-8E2TH06
VS-8E2TH06FP
11-Mar-11
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PDF
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VS-ETX1506FP
Abstract: No abstract text available
Text: VS-ETX1506-M3, VS-ETX1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETX1506-M3,
VS-ETX1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-ETX1506FP
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETU3006-M3,
VS-ETU3006FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETU3006-M3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-ETH1506-M3, VS-ETH1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETH1506-M3,
VS-ETH1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-ETL1506-M3, VS-ETL1506FP-M3 Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • State of the art low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC
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Original
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VS-ETL1506-M3,
VS-ETL1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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TDSl3150
Abstract: tdsl3150 m TDSL3160
Text: TDSL31. Vishay Semiconductors Low Current 10 mm Seven Segment Display FEATURES • Low power consumption • Suitable for DC and multiplex operation • Evenly lighted segments • Grey package surface • Untinted segments • Luminous intensity categorized
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Original
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TDSL31.
2002/95/EC
2002/96/EC
TDSL31
18-Jul-08
TDSl3150
tdsl3150 m
TDSL3160
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PDF
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eth1506fp
Abstract: VS-ETH1506FP-M3
Text: VS-ETH1506-M3, VS-ETH1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETH1506-M3,
VS-ETH1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETH1506-M3
VS-ETH150
11-Mar-11
eth1506fp
VS-ETH1506FP-M3
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PDF
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VS-ETL0806-M3
Abstract: No abstract text available
Text: VS-ETL0806-M3, VS-ETL0806FP-M3 Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES • State of the art low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETL0806-M3,
VS-ETL0806FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETL0806-M3
11-Mar-11
VS-ETL0806-M3
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PDF
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PEG 122
Abstract: Potentiometer 25K potentiometer Sfernice PE60 Logarithmic Potentiometer 500k
Text: PE60 Vishay Sfernice Power Panel 6 W Potentiometer FEATURES • High power rating 6 W at 50 °C • Cermet element • Full sealing • Mechanical strength • Industrial and professional grade • Tests according to CECC 41000 • Compliant to RoHS directive 2002/95/EC
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Original
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2002/95/EC
32-UNEF-2A
18-Jul-08
PEG 122
Potentiometer 25K
potentiometer Sfernice
PE60
Logarithmic Potentiometer 500k
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PDF
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Untitled
Abstract: No abstract text available
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • – DSP instruction Extensions, ARM Jazelle® Technology for Java® Acceleration – 8 Kbytes Data Cache, 16 Kbytes Instruction Cache, Write Buffer – 200 MIPS at 180 MHz
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Original
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ARM926EJ-Sâ
32-Kbyte
32-Kbyte
AT91SAM9XE256
AT91SAM9XE512)
16-Kbyte
AT91SAM9XE128)
AT91SAM9XE128,
AT91SAM9XE51re
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-ETL0806-M3, VS-ETL0806FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES • State of the art low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC
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Original
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VS-ETL0806-M3,
VS-ETL0806FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETL0806-M3
2011/65/EU
2002/95/EC.
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Linear Patterns - Dual Grid Micro-Measurements Transducer-Class Strain Gages GAGE PATTERN Actual size shown. Enlarged when necessary for definition inch DIMENSIONS GAGE DESIGNATION See Note 1 RES. IN OHMS STANDARD CREEP CODE millimeter ENCAPSULATION OPTION
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Original
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N2A-XX-S061P-350
N2K-XX-S085N-350/DP
N2K-XX-S098N-10C/DP
TK-XX-S085N-350/DP
TK-XX-S098N-10C/DP
SK-XX-S085N-350
27-Apr-2011
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-ETU1506-M3,VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETU1506-M3
VS-ETU1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETU1506-M3
11-Mar-11
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PDF
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transistor d 13009
Abstract: DM6030HK XP1015 XP1015-BD XP1015-BD-000V XP1015-BD-EV1
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD January 2010 - Rev 22-Jan-10 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1015-BD
22-Jan-10
MIL-STD-883
XP1015-BD-EV1
XP1015
transistor d 13009
DM6030HK
XP1015-BD
XP1015-BD-000V
XP1015-BD-EV1
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PDF
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ETX1506FP
Abstract: VS-ETX1506FP-M3
Text: VS-ETX1506-M3, VS-ETX1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETX1506-M3,
VS-ETX1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETX1506-M3
11-Mar-11
ETX1506FP
VS-ETX1506FP-M3
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PDF
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VS-ETL1506FP-M3
Abstract: No abstract text available
Text: VS-ETL1506-M3, VS-ETL1506FP-M3 Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • State of the art low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC
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Original
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VS-ETL1506-M3,
VS-ETL1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETL1506-M3
11-Mar-11
VS-ETL1506FP-M3
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PDF
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vs-eth0806
Abstract: No abstract text available
Text: VS-ETH0806-M3, VS-ETH0806FP-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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Original
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VS-ETH0806-M3,
VS-ETH0806FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETH0806-M3
VS-ETH0806
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: REVISIONS 1,5±0,1 1,7 0,89 1,42 R0,2 0,4 3 0,2 SCALE 6:1 B A ECN SYM 11061 A SDP002 DESCRIPTION DATE 0,2 2±0,05 APPROVAL 9/25/12 RELEASED TO PRODUCTION 1,2±0,1 A JT 0,8 0,05 2X HOLES 1,5 PIVOT 3 0,2 1,15 2 1 1,85±0,1 2±0,1 2 3,05±0,1 1,6 3 COM 1 2X 0,5
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Original
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SDP002
2002/95/EC
CKQI0019
SDP002-OL
25-Jan-10
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PDF
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Untitled
Abstract: No abstract text available
Text: E in 3 u E c n m % *s I i 0IBUJA99 EN PROYfCCIONES F1 DATE DESCRIPTION rev REVISED PER ECO-10-000445 22JAN10 SEE ECR-11-006271 G 25MAR11 DW APPV KK HMR JS LB Oï co SECCION B - B o en .M s 3 X ¡4 1 :Ü W ï f f iK C S ï ^ ^ M 3 # fi i . "' s;í ’íí:í-?•/■k^kk:kfk;kfk:;-^
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OCR Scan
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0IBUJA99
ECO-10-000445
22JAN10
ECR-11-006271
25MAR11
9903n
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PDF
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LR7189
Abstract: E13288
Text: 4 TH IS DRAWING COPYRIGHT IS 3 U N P U B L IS H E D . RELEASED BY 1TCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N 2 -, - R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. G D E S C R IP TIO N RE V DIMPLES R 15.87 [R.625] MAX WASHER PER ECR 10-000722 22JAN10
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OCR Scan
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22JAN10
LR7189
B-152,
E13288
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS £l DRAWI NG IS UNPUBL I SHED. COPYRI GHT 20 RELEASED BY TYCO E LECTRONI CS CORPORATI ON. ALL FOR P U B L I C A T I O N I NTERNATIONAL LOC RI GHTS RESERVED. GP DI ST REV ISIONS 00 LTR E2 A ± .010 DESCRI PTION 300CT2009 R E V P ER E C O - 0 9 - 0 2 4 0 2 5
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OCR Scan
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300CT2009
ECO-10-000444
22JAN10
300CT2009
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PDF
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