D12-CRCW0805
Abstract: E48-series crcw1206 D11-CRCW0603 crcw0603 ms1 Resistors CRCW0402 LAE1KCHIP1206NJE24 crcw0805 LAE1ACHIP0805NJE24
Text: Pick Of The Chips Vishay Thick Film Chip Resistors Engineering Design Kit, Surface Mount Our popular D25/CRCW1206, D12/CRCW0805, D11/CRCW0603, D10/CRCW0402 ± 1 % ± 100 ppm/°C and ± 5 % ± 200 ppm/°C, Thick Film Chip Resistors are now conveniently packaged in a choice of different engineering design kits.
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D25/CRCW1206,
D12/CRCW0805,
D11/CRCW0603,
D10/CRCW0402
E48-series
LAE1FCHIP0402NJE24
LAE1GCHIP0402KFE48
LAE1BCHIP0603NJE24
D12-CRCW0805
crcw1206
D11-CRCW0603
crcw0603
ms1 Resistors
CRCW0402
LAE1KCHIP1206NJE24
crcw0805
LAE1ACHIP0805NJE24
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch
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SUD50P06-15
O-252
SUD50P06-15-GE3
11-Mar-11
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SiP12203
Abstract: Si1972DH
Text: SiP12203 Vishay Siliconix Triple Step Down Controller IC for 2 Synchronous and 1 Linear Power Rails DESCRIPTION FEATURES The SiP12203 is a triple-output controller designed for high performance conversion of intermediate bus voltages into the load supplies in set top boxes, base stations, wall adapters,
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SiP12203
18-Jul-08
Si1972DH
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VESD05A5A-HSF-GS08
Abstract: 20453 LLP75-6L 81655
Text: VESD05A5A-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75 Features • • • • • • Ultra compact LLP75-6L package Low profile < 0.6 mm 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 13 pF ESD-protection acc. IEC 61000-4-2
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VESD05A5A-HSF
LLP75
LLP75-6L
2002/95/EC
2002/96/EC
18-Jul-08
VESD05A5A-HSF-GS08
20453
81655
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si4944dy-t1-e3
Abstract: No abstract text available
Text: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT
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Si4944DY
Si4944DY-T1-E3
Si4944DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 VDS (V) 20 0.025 at VGS = 2.5 V • Halogen-free Qg (Typ.) • TrenchFET Power MOSFET RoHS 10 nC 6 COMPLIANT APPLICATIONS
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Si5432DC
Si5432DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT
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Si4944DY
Si4944DY-T1-E3
Si4944DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®
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SiS406DN
SiS406DN-T1-GE3
11-Mar-11
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marking tm tsop-6
Abstract: Si5432DC
Text: New Product Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 VDS (V) 20 0.025 at VGS = 2.5 V • Halogen-free Qg (Typ.) • TrenchFET Power MOSFET RoHS 10 nC 6 COMPLIANT APPLICATIONS
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Si5432DC
Si5432DC-T1-GE3
11-Mar-11
marking tm tsop-6
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A1930
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
11-Mar-11
A1930
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VESD05A5A-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75 Features • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 13 pF ESD-immunity acc. IEC 61000-4-2
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VESD05A5A-HS3
LLP75
LLP75-6A
2002/95/EC
2002/96/EC
VESD05A5A-HS3
VESD05A5A-HS3-GS08
2011/65/EU
2002/95/EC.
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SiR470DP
Abstract: S-8229 sir470dp-t1-ge3
Text: New Product SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 60 0.00265 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 45.5 nC • • • • Halogen-free TrenchFET Gen III Power MOSFET 100 % Rg Tested
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SiR470DP
SiR470DP-T1-GE3
18-Jul-08
S-8229
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SiR850DP-T1-GE3
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
15lectual
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 1 SPICE Device Model Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7748DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification
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SiR492DP
SiR492DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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V7-1C17D8-002
Abstract: i8700 FO503
Text: FO-50360-L CW-B1651 REV DOCUMENT 4 0043895 CHANGED MB H BY CHECK 22SEP08 BL R S T E E L ACTUATOR , 8 7 0 ± . 02 0 040 . 0 6 0MAX — , PRETRAVEL . 32 c r r r - _ I r . 6 0 0 ± . 02 0 OPERATING POS I T I O N . 4 06±. 003 . 25 i . I I 4 ± . 002 4 ± . 00 2 HOLE
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OCR Scan
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FO-50360-L
CW-B1651
22SEP08
060MAX
1C17D8-002
FORCE----160
V7-1C17D8-002
V7-1C17D8-002
i8700
FO503
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