J05Z
Abstract: TO-92 Package Dimensions fairchild TO-226-AE
Text: TO-92 Package Dimensions TO-92; TO-5 Standard Lead Form J05Z Option (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 ; Note: Option available for TO-226AE package; Call factory for details.
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O-226AE
J05Z
TO-92 Package Dimensions
fairchild
TO-226-AE
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TO-226-AE
Abstract: 41213 521-02 226AE
Text: TO-226AE Package Dimensions TO-226AE FS PKG Code 95, 99 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.300 S4.70-4.32; S1.52-1.02; 2" TYP S7.73-7.10; S7.87-7.37; 2" TYP S1.65-1.27; 0.51
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O-226AE
O-226AE
TO-226-AE
41213
521-02
226AE
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D72Z
Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
Text: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:
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O-226AE
O-226
CBVK741B019
PN2222N
D9842
F63TNR
PN222N
F63TNR
D9842AB
D72Z
CBVK741B019
PN2222N
D73Z
J32Z
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226AE
Abstract: PN2222N
Text: TO -226AE Packaging Configuratio n: Figur e 1.0 TAPE and REEL OPTION FSCINT Label sampl e See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B LOT: CBVK741B019 QTY: 10000 NSID: PN2222N
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O-226AE
-226AE
CBVK741B019
PN2222N
D9842
F63TNR
375mm
267mm
375mm
226AE
PN2222N
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PSW01A
Abstract: MPSW
Text: M AXIM U M RATINGS Rating Symbol Collector-Emitter Voltage Value Vdc VCEO M P SW O l M P SW O l A Unit Collector-Base Voltage Vdc v CBO CASE 29-05, STYLE 1 TO-92 TO-226AE 40 50 M PSW 01 M P SW O l A v EBO 5.0 Vdc Collector Current — Continuous Emitter-Base Voltage
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O-226AE)
MPSW01,
PSW01A
MPSW
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIM UM RATINGS Rating Symbol Value Collector-Emltter Voltage v CEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage
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O-226AE)
MPSW10
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MPF6659
Abstract: MPF6661 MPF6660
Text: MPF6659 thru MAXIMUM RATINGS Symbol MPF6659 MPF6660 MPF6661 Rating Drain-Source Voltage VDS 35 Drain-Gate Voltage VDG 35 Gate-Source Voltage 90 60 90 VGS ±30 Id 2.0 3.0 MPF6661* Vdc CASE 29-05, STYLE 22 TO-92 TO-226AE Vdc Vdc Ade Id m Total Device Dissipation
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MPF6659
MPF6660
MPF6661
MPF6659
MPF6661*
O-226AE)
MPF6661
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2N6729
Abstract: No abstract text available
Text: 2N6729/MPS6729 £39 National J u d Semiconductor 2N6729 /ffl/ IU MPS6729 llf l I TO-237 TO- 226AE V TL/G/10100-8 TL/G/10100-4 PNP G eneral P u rpo se Am plifier Electrical C ha ra cte ristics ta = 25°c unless otherwise noted Sym bol Param eter Min Max Units
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2N6729/MPS6729
2N6729
O-237
MPS6729
TL/G/10100-4
226AE
TL/G/10100-8
2N6729
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BDC08
Abstract: BDC06 MPSW92
Text: MOT ORCL A SC XSTRS/R F ISE D I t3b?aSM OOñS^lb T |T - BDC06 BDC08 CA SE 29-03, STYLE 14 TO-92 TO-226AE M A X IM U M RATINGS U nit Sym bol BDC 06 BDC 08 Collector-Emitter Voltage VCEO 300 250 Vdc Collector-Base Voltage VcBO 300 250 Vdc Em itter-Base Voltage
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BDC06
BDC08
O-226AE)
BDC08
MPSW92
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2903 st
Abstract: bdc07
Text: MOTOROLA SC -CXSTRS/R F> 6367254 M OT O RO L A D lf | b 3 b 7 2 S 4 SC CXSTRS/R F 96D 81734 D BDC05 BDC07 C A S E 29-03, ST Y LE 14 TO-92 TO-226AE) M A X IM U M R A T IN G S BDC 07 U n it 300 250 Vdc 300 250 Vdc Sym bol BDC 05 C o lle c to r-E m itte r V o lta g e
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BDC05
BDC07
8DC07
BDC07
2903 st
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R312
Abstract: AJA SOT23 e purse MMBTA64 MPSA64 MPSW64
Text: MPSA64/MPSW64/MMBTA64 n ä TL SEM IC O DISCRETE H E ' K g M J lA E n U[] Bc MPSW64 J*UH b TL/G/10100-1 0 0 3 7 ^ 5 | T - 3 1 '2 1 MMBTA64 if T0-92 b501L3G - National Semiconductor MPSA64 » g TO-236 SOT-23 TO-226AE TL/G/10100-5 " C TL/G/10100-4 PNP Darlington Transistor
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G0H7272
r-31-2^
MPSA64
MPSW64
MMBTA64
to-92
T0-22ME
to-236
sot-23)
TL/G/10100-5
R312
AJA SOT23
e purse
MMBTA64
MPSA64
MPSW64
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tic 2160
Abstract: BDC07 BDC05 MPSW42
Text: MO T OR OL A SC 12E D I fc.3b?aSM 0005115 ñ | X S TR S/ R F BDC05 BDC07 CASE 29-03, STYLE 14 TO-92 TO-226AE M AXIM UM RATINGS R atin g S ym b ol BDC 05 BDC 07 U n it C ollector-E m itter Voltage VCEO 3 00 250 Vdc Collector-Base Voltage VCBO 3 00 250 Vdc
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BDC05
BDC07
tic 2160
MPSW42
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P2N3019
Abstract: F 2452
Text: MOT OR GL A SC 12E D X S T R S/ R F I I t>3b?as4 ODÖbaOt. b r - a w P2N3019 : CASE 29-03, STYLE 1 TO-92 TO-226AE MAXIMUM RATINGS Sym bol Value ColJector-Ermtter Voltage VCEO 80 Vdc Collector-Base Voltage VcBO 120 Vdc VEBO 7.0 . Vdc ic 1.0 Ade R a tin g
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P2N3019
O-226AE)
P2N3019
F 2452
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F930
Abstract: T12P MPF960 F990
Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain
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MPF930*
MPF960*
MPF990*
MPF930
MPF960
MPF990
O-226AE)
MPF930,
MPF960,
F930
T12P
F990
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W01A
Abstract: No abstract text available
Text: MAXIM UM RATINGS Symbol Rating C o U e c to r-E m itte r V o lta g e Value MPSW Ol M P S W 01A Unit V dc v CEO 40 C o lle c to r-B a s e V o lta g e Vdc VCBO M P S W 01 M P S W 01A 40 50 E m itte r-B a s e V o lta g e CASE 29-03, STYLE 1 TO-92 TO-226AE Ve b o
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O-226AE)
MPSW01,
W01A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement 3 DRAIN 2 GATE \ j. TMOS 1 SOURCE CASE 29-05, STYLE 22 TO-92 TO-226AE MAXIM UM RATINGS Symbol Value Unit Drain-Source Voltage Rating Voss 60 Vdc Gate-Source Voltage — Continuous
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O-226AE)
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2N6715
Abstract: No abstract text available
Text: 2N6715/PN6715/MPS6715 Z W A H ü National Semiconductor 2N6715 M / PN6715 T0" 257 J u B„ C MPS6715 ify T0" 92 B Z *C T L /Q /1 0 1 0 0 -8 TO• 226AE UU Bc T l/G /1 0 1 0 0 -1 T L /G /1 0 1 0 0 -4 N P N G e n e r a l P u r p o s e A m p lifie r E l e c t r ic a l C h a r a c t e r i s t i c s ta = 25°c unless otherwise noted
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2N6715/PN6715/MPS6715
2N6715
PN6715
MPS6715
226AE
2N6715
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Untitled
Abstract: No abstract text available
Text: 2N6724/MPS6724/2N6725/MPS6725 NATL SEMI COND DISCRET E HE D J bSOllBO 00372^4 b £K1 National át¡á Semiconductor 2N6724 2N6725 f MPS6724 MPS6725 TO-237 4 TL/G/10100-8 W II TO-226AE V TL/G/10100-4 NPN Darlington T ra n sisto r Electrical C h a ra cte ristics
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2N6724/MPS6724/2N6725/MPS6725
2N6724
2N6725
MPS6724
MPS6725
O-237
TL/G/10100-8
O-226AE
TL/G/10100-4
2N6724/MPS6724
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Untitled
Abstract: No abstract text available
Text: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted
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MPSA56/MPSW56/MMBTA56
MPSA56
MPSW56
MMBTA56
TL/G/10100-1
O-236
226AE
Tl/G/10100-5
TL/G/10100-4
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MMBTA06
Abstract: MPSW06
Text: MPSA06/MPSW06/MMBTA06 N AT L SEMI CONO DISCRETE 11E D | t S D 1 1 3 D _0 0 3 7 E t . a T-27-05 CTH National æ j Semiconductor M PSW 06 M PSA06 ¥ U E 0 UU Bc M M BTA06 ^ iß IIIHl 10-92 t TUG/10100-1 UH BC B | TO-236 S01' 23 T0-226AE TUG/10100-6 „L/G/10100-4
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SD113D
0D37Et
MPSW06
MMBTA06
TUG/10100-1
O-226AE
O-236
OT-23)
TUG/10100-6
TUG/10100-4
MMBTA06
MPSW06
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LC 300-S
Abstract: 2N6717 MPS6717
Text: NATL S EM I C O N D H E DISCRETE D • bS01130 D0375b3 I 4 I | ' National Semiconductor Jl A 2N6717 I Ml - ro T'3 3 'OS M PS6717 T O -2 J 7 llllll BC TO -226AE TL/G/10100-8 TL/G/10100-4 NPN General Purpose Amplifier Electrical Characteristics ta = 25°c unless otherwise noted
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bS01130
D0375b3
2N6717
MPS6717
TUG/10100-8
O-226AE
TL/G/10100-4
MPS6717
LC 300-S
2N6717
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att High Voltage Transistor MPSW42 NPN Silicon M otorola Preferred Device COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIMUM RATINGS Rating Symbol Value Unit v CEO 300 Vdc v CBO 300 Vdc Vdc C ollector-E m itter Voltage
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MPSW42
O-226AE)
Resis00
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MPF910
Abstract: mfe910
Text: MPF910 MPF910 CASE 29-05, STYLE 22 TO-92 TO-226AE M A X IM U M RATIN G S Rating Symbol Value U nit VDS 60 Vdc Vg S VGSM ±20 ±40 Vdc Vpk 'D 'd m 0.5 1.0 Ade Total Device Dissipation (a T/^ = 25°C Derate above 25°C MPF910 pd 1.0 8.0 m wrc Total Device Dissipation (a Tç = 25°C
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MPF910
MPF910
O-226AE)
MFE910
MPF6669
30ICAL
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BR a92
Abstract: No abstract text available
Text: MPSA92/MPSW92/MMBT A92 J£|National JUm Semiconductor MPSA92 MPSW92 L 1 jJlJjj /M ////// M T°‘92 / // i \ UI f f J M/ !iM B c MMBTA92 TO-236 <SO r-23> TO- 226AE T L /G /1 0 1 0 0 -5 Bc T L /G /1 0 1 0 0 -1 T L /G /1 0 1 0 0 -4 PNP High Voltage Amplifier
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MPSA92/MPSW92/MMBT
MPSA92
MPSW92
MMBTA92
226AE
O-236
100fiA
BR a92
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