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    2222A TRANSISTOR Search Results

    2222A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2222A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
    Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


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    PDF VPS05161 OT-23 2222/A EHP00744 EHP00745 Oct-14-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP

    2222a

    Abstract: marking code k22 dual npn 500ma CMKT2222A 2222a central
    Text: Central CMKT2222A TM Semiconductor Corp. ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 100mA, 150mA, x10-4 2222a marking code k22 dual npn 500ma CMKT2222A 2222a central

    transistor 2222a

    Abstract: CMLT2222A MARKING CODE l22 2222a central
    Text: Central CMLT2222A SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMLT2222A OT-563 OT-563 100mA, 150mA, x10-4 transistor 2222a CMLT2222A MARKING CODE l22 2222a central

    marking code k22

    Abstract: 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a
    Text: CMKT2222A SURFACE MOUNT ULTRAminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 150mA, x10-4 marking code k22 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a

    MARKING K27

    Abstract: NPN2222A k27 transistor k27 sot-363
    Text: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP


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    PDF MMDT2227 222A-Type 907A-Type OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA MARKING K27 NPN2222A k27 transistor k27 sot-363

    m1b marking

    Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
    Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage


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    PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* m1b marking MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907a
    Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    PDF 2N2907 2N2907A 500mA, 150mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907a

    1N914

    Abstract: MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a
    Text: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage


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    PDF MMBT2222LT1 MMBT2222ALT1* r14525 MMBT2222LT1/D 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27


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    PDF OT-363 MMDT2227 OT-363 -500mA -150mA, -15mA -500mA,

    2907 TRANSISTOR PNP

    Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    PDF 2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222

    M1B marking

    Abstract: transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1 LMBT2222LT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


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    PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1 M1B marking transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1G

    1P marking

    Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO


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    PDF LMBT2222LT1G LMBT2222ALT1G 3000/Tape OT-23 1P marking LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP


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    PDF MMDT2227 222A-Type 907A-Type OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA

    K27 pnp

    Abstract: K27 npn K27 SOT-363 MARKING k27 sot-363
    Text: SPICE MODELS: MMDT2227 MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • A Complementary Pairs One 2222A Type NPN One 2907A Type (PNP) Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching


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    PDF MMDT2227 OT-363 J-STD-020C DS30122 K27 pnp K27 npn K27 SOT-363 MARKING k27 sot-363

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B


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    PDF Q68000-A6481 OT-23 Jan-22-1999

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B


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    PDF Q68000-A6481 OT-23 EHN0005 EHN00056 10CK2, Jan-22-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222a sot23 2222A transistor

    transistor 2222a

    Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
    Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially


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    Untitled

    Abstract: No abstract text available
    Text: Centrar CMKT2222A Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 13-November

    marking code k22

    Abstract: transistor 2222a k22 transistor sot-363 MARKING l0 MARKING CODE c26
    Text: Central CMKT2222A Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 13-November marking code k22 transistor 2222a k22 transistor sot-363 MARKING l0 MARKING CODE c26

    Untitled

    Abstract: No abstract text available
    Text: Central CMLT2222A Semiconductor Corp. SURFACE MOUNT PICOmini DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMLT2222A OT-563 OT-563 13-November

    transistor k70

    Abstract: No abstract text available
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


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    PDF CMKT2207 OT-363 X10-4 X10-4 OT-363 13-November transistor k70

    transistor pn 2222a

    Abstract: transistor 2222a to-92 marking EB 202 transistor
    Text: PN2907A PNP SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction KM hM Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN 2222A TO-92


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    PDF PN2907A IL-STD-202, -15mA -50mA -50mA -150mA -500mA -50mA, 100MHz transistor pn 2222a transistor 2222a to-92 marking EB 202 transistor

    KI 2222A

    Abstract: transistor 2222a sot-363 MARKING l0
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


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    PDF CMKT2207 OT-363 150mA, KI 2222A transistor 2222a sot-363 MARKING l0

    k27 transistor

    Abstract: NPN2222A MARKING K27 k27 sot-363 MMDT2227 PNP2907A LC 300-S
    Text: MMDT2227 TRANSYS ELECTRONICS COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features_ Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and


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    PDF MMDT2227 222A-Type 907A-Type OT-363, MIL-STD-202, PNP2907A NPN2222A OT-363 -150mA, -15mA k27 transistor MARKING K27 k27 sot-363 MMDT2227 LC 300-S