Untitled
Abstract: No abstract text available
Text: 307C1654BHLAB, 307C1654BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS @ 25°C PARAMETER UNIT 70 ± 25% Maximum Voltage Vrms 265 Maximum Continuous Voltage Vrms 150 Withstand Voltage
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307C1654BHLAB,
307C1654BHMAB
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
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Si1904EDH
SC-70
OT-363
SC-70
08-Apr-05
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mosfet low vgs
Abstract: diode marking CODE VN S2 Si1501DL marking code vishay SILICONIX
Text: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V
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Si1501DL
OT-363
SC-70
18-Jul-08
mosfet low vgs
diode marking CODE VN S2
marking code vishay SILICONIX
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Si1904EDH
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
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Si1904EDH
SC-70
OT-363
SC-70
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 307C1654BHLAB, 307C1654BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS @ 25°C PARAMETER UNIT 70 ± 25% Maximum Voltage Vrms 265 Maximum Continuous Voltage Vrms 150 Withstand Voltage
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307C1654BHLAB,
307C1654BHMAB
307C1654BHLAB
21-May-01
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Si1904EDH
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
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Si1904EDH
SC-70
OT-363
SC-70
S-03929--Rev.
21-May-01
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lp8527
Abstract: 0X122 B25 640 TO3 transistor to1a CRC16 SD CARD CONTROLLER CMD26 TC6384AF ACMD18 TC6377AF cypher
Text: TENTATIVE DATA Revison0.35 SD Memory Card/SmartMedia Interface Controller TC6377BF/TC6384AF SPECIFICATION TENTATIVE Revison0.35 2001-06-25 Copyright 2001 Toshiba Corporation. All rights reserved. TOSHIBA STRICTRY CONFIDENTIAL 2001-07-11 TENTATIVE DATA Revison0.35
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TC6377BF/TC6384AF
7-FEB-01
23-MAR-01
26-Apr-01
18-May-01
21-May-01
30-May-01
01-Jun-01
05-Jun-01
25-Jun-01
lp8527
0X122
B25 640 TO3
transistor to1a
CRC16
SD CARD CONTROLLER CMD26
TC6384AF
ACMD18
TC6377AF
cypher
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Si5465EDC
Abstract: siliconix
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
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Si5465EDC
S-03912--Rev.
21-May-01
siliconix
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Si1563EDH
Abstract: "MARKING CODE EA"
Text: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V
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Si1563EDH
SC-70
OT-363
SC-70
S-03943--Rev.
21-May-01
"MARKING CODE EA"
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Untitled
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
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Si1904EDH
SC-70
OT-363
SC-70
08-Apr-05
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SUC85N10-04S
Abstract: No abstract text available
Text: SPICE Device Model SUC85N10-04S Vishay Siliconix N-Channel 100-V D-S 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUC85N10-04S
0-to-10V
18-Jul-08
SUC85N10-04S
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MARKING CODE EA
Abstract: mosfet low vgs marking EA sot-363 Si1563EDH
Text: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V
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Si1563EDH
SC-70
OT-363
SC-70
08-Apr-05
MARKING CODE EA
mosfet low vgs
marking EA sot-363
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Si1501DL
Abstract: "MARKING CODE S1"
Text: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V
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Si1501DL
OT-363
SC-70
S-03840--Rev.
21-May-01
"MARKING CODE S1"
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Si1501DL
Abstract: No abstract text available
Text: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V
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Si1501DL
OT-363
SC-70
08-Apr-05
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Si1904EDH
Abstract: No abstract text available
Text: Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS
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Si1904EDH
SC-70
OT-363
SC-70
S-03929--Rev.
21-May-01
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Si1501DL
Abstract: No abstract text available
Text: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363
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Si1501DL
OT-363
SC-70
S-03840--Rev.
21-May-01
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h0603
Abstract: H0705
Text: Vishay Thin Film Single High Value Chip Resistors SURFACE MOUNT H FEATURES • Ohmic values to hundred megohms • Low Noise • Tight Tolerance TYPICAL PERFORMANCE Actual Size ◆ These high value resistors are manufactured using thin film technology and are available with improved performance and
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200mW
250mW
500mW
21-May-01
h0603
H0705
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8 pin SURFACE MOUNT RESISTOR
Abstract: NOMC16031002Z NOMC
Text: Vishay Thin Film Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks Narrow Body FEATURES • Standard 8, 14 & 16 pin counts 0.150" Narrow Body JEDEC MS-012 • Rugged molded case construction • Stable thin film element Actual Size • Low temperature coefficient
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MS-012
25ppm/
21-May-01
8 pin SURFACE MOUNT RESISTOR
NOMC16031002Z
NOMC
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUC85N10-04S Vishay Siliconix N-Channel 100-V D-S 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUC85N10-04S
0-to-10V
21-May-01
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MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View
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1902DL
OT-363
SC-70
S-99188--
01-Nov-99
MARKING PARI SC70-6
sot363 marking qs
sm905
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Untitled
Abstract: No abstract text available
Text: SÌ1904EDH Vishay Siliconix New Product Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY 0 .8 1 0 @ V g s = 4 .5 V 0 .7 3 • TrenchFET Power MOSFETS: 2.5-V Rated • ESD Protected: 1800 V • Thermally Enhanced SC-70 Package 1 .04 @ V Gs = 0.65
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1904EDH
SC-70
OT-363
SC-70
S-03929--
21-May-01
SM904EDH
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MARKING CODE EA
Abstract: 71416 SM563EDH
Text: SÌ1563EDH Vishay Siliconix New Product Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY FEATURES rDS(on) < ^) I d (A ) 0.280 G VQS = 4.5 V 1.28 V d s (V ) N-Channel 20 P-Channel -2 0 0.360 @ VGS * 2.5 V 1.13 0.450 @ V qs - 1.8 V 1.00 0.490 @ V GS = -4 .5 V
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1563EDH
SC-70
OT-363
SC-70
S-03943--
21-May-01
MARKING CODE EA
71416
SM563EDH
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Untitled
Abstract: No abstract text available
Text: — THIS DRAWING 15 UNPUBLISHED.- RELEASED M R PUBLICATION- BY TYCO ELECTRONICS CORPORATION. COPYRIGHT ALL R Gh TS RESERVED. LOC D isr GP 00 REVISIONS LTF D DATE OWN APVD 13JUL01 JS GB DESCRIPTION PER 0 S 20— 0281 — 01
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13JUL01
Z2MAY01
21MAY01
31MAR2000
AMP52770
22MAY01
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03840
Abstract: MARKING CODE AA S0384-0
Text: Sii 501 DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel Vd s (V) N-Channe! 20 r D S (o n) lo(mA) (Q) 2.0 @ V GS = 4.5 V P-Channel 250 2.5 @ V GS = 2.5 V 150 3.8 @ VGS - -4 .5 V -1 8 0 5.0 @ VGS « -2 .5 V -1 0 0 -2 0
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OT-363
SC-70
S-03840--
21-May-01
SM501DL
03840
MARKING CODE AA
S0384-0
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