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    21L1 Search Results

    21L1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    72221L10PF Renesas Electronics Corporation 1K x 9 SyncFIFO, 5.0V Visit Renesas Electronics Corporation
    72221L15PF Renesas Electronics Corporation 1K x 9 SyncFIFO, 5.0V Visit Renesas Electronics Corporation
    72421L15PF Renesas Electronics Corporation 64 x 9 SyncFIFO, 5.0V Visit Renesas Electronics Corporation
    72821L10TF8 Renesas Electronics Corporation 1K x 9 DualSync FIFO, 5.0V Visit Renesas Electronics Corporation
    72V221L15PFG Renesas Electronics Corporation 1K x 9 SyncFIFO, 3.3V Visit Renesas Electronics Corporation
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    21L1 Price and Stock

    Infineon Technologies AG BTS621L1E3128AAUMA1

    IC PWR SWITCH
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    DigiKey BTS621L1E3128AAUMA1 Reel 7,000 1,000
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    Mouser Electronics BTS621L1E3128AAUMA1 3,478
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    EBV Elektronik BTS621L1E3128AAUMA1 14 Weeks 1,000
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    Infineon Technologies AG BTS721L1XUMA1

    IC PWR SWITCH N-CHAN 1:1 DSO-20
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    DigiKey BTS721L1XUMA1 Reel 1,000 1,000
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    Avnet Americas BTS721L1XUMA1 Reel 1,000 20 Weeks 1,000
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    Newark BTS721L1XUMA1 Cut Tape 4,546 1
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    Mouser Electronics BTS721L1XUMA1 3,844
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    Chip1Stop BTS721L1XUMA1 Cut Tape 718
    • 1 $6.92
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    EBV Elektronik BTS721L1XUMA1 27 Weeks 1,000
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    Win Source Electronics BTS721L1XUMA1 20,300
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    Lattice Semiconductor Corporation LPTM21L-1ABG100I

    IC PLATFORM MANAGER 3.3VDC 100BG
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    DigiKey LPTM21L-1ABG100I Tray 830 1
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    Newark LPTM21L-1ABG100I Bulk 840
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    Flip Electronics LPTM21L-1ABG100I 1,812
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    Amphenol CIT TMB-E8F2-1L1

    1.85(F)2-H,EL,FIELDREP
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    DigiKey TMB-E8F2-1L1 Tray 353 1
    • 1 $71.41
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    Richardson RFPD TMB-E8F2-1L1 82 1
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    Alpha Wire F221L1IN-BK004

    HEATSHRINK 1" BLACK
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    DigiKey F221L1IN-BK004 Bulk 200 200
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    F221L1IN-BK004 Bulk 1 1
    • 1 $22.07
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    Find more 21L1 price and stock on Findchips.com

    21L1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)


    Original     		PDF SSM3J56MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK4059MFV 100mV

    Untitled

    Abstract: No abstract text available
    Text: SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High-Speed Switching Applications Optimum for high-density mounting in small packages Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10


    Original     		PDF SSM3K04FV

    EASE63180

    Abstract: ML63187 ML63189B ML63193 SASM63K AC power tool variable speed control circuit melody circuit
    Text: ¡ ML63187/189B/193 User's Manual Please ignore data of ML63187 herein. The product is unavailable. FIRST EDITION ISSUE DATE: Mar. 2000 FEUL63193-01 E2Y0002-2X-13 NOTICE 1. The information contained herein can change without notice owing to product and/or


    Original     		PDF ML63187/189B/193 ML63187 FEUL63193-01 E2Y0002-2X-13 EASE63180) EASE63180. M189B Appendix-58 EASE63180 ML63189B ML63193 SASM63K AC power tool variable speed control circuit melody circuit

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV

    Untitled

    Abstract: No abstract text available
    Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Unit: mm z Complementary to the RN1101MFV to RN1106MFV R1 (kΩ) R2 (kΩ)


    Original     		PDF RN2101MFVâ RN2106MFV RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN1101MFV RN1106MFV

    sat 1205

    Abstract: 2SA1955FV
    Text: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧


    Original     		PDF 2SA1955FV sat 1205 2SA1955FV

    SSM3K38MFV

    Abstract: No abstract text available
    Text: SSM3K38MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K38MFV ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2±0.05 1 2 0.32±0.05 0.4 0.8±0.05 0.4 0.8±0.05 0.22±0.05 1.2V drive Low ON-resistance : Ron = 20 Ω max (@VGS = 1.2 V)


    Original     		PDF SSM3K38MFV SSM3K38MFV

    SSM3J15FV

    Abstract: No abstract text available
    Text: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Low on-resistance Unit: mm Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100 Pulse


    Original     		PDF SSM3J15FV SSM3J15FV

    SSM3K16FV

    Abstract: No abstract text available
    Text: SSM3K16FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K16FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Ron = 4.0 Ω 最大 (@VGS = 2.5 V) 1.2±0.05 : Ron = 15 Ω (最大) (@VGS = 1.5 V) 絶対最大定格 (Ta = 25°C)


    Original     		PDF SSM3K16FV SSM3K16FV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    SSM3K16FV

    Abstract: No abstract text available
    Text: SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications Analog Switch Applications 1.2±0.05 : Ron = 15 Ω max (@VGS = 1.5 V) Symbol Rating Unit Drain-Source voltage Characteristics VDS 20 V Gate-Source voltage


    Original     		PDF SSM3K16FV SSM3K16FV

    RN1107MFV

    Abstract: RN1109MFV RN2107MFV RN2108MFV RN2109MFV
    Text: RN2107MFV～RN2109MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107MFV, RN2108MFV, RN2109MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2107MFVRN2109MFV RN2107MFV, RN2108MFV, RN2109MFV RN1107MFVRN1109MFV RN2107MFV2109MFV RN2107MFV RN2108MFV RN1107MFV RN1109MFV RN2107MFV RN2108MFV RN2109MFV

    RN1114MFV

    Abstract: RN1118MFV RN2114 RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV
    Text: RN2114MFV～RN2118MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV 単位 : mm R1 (kΩ) R2 (kΩ) RN2114MFV 1 10 RN2115MFV 2.2 10 RN2116MFV 4.7 10 RN2117MFV


    Original     		PDF RN2114MFVRN2118MFV RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV RN1114MFVRN1118MFV RN2114MFV RN2115MFV RN1114MFV RN1118MFV RN2114 RN2116MFV RN2118MFV

    RN1104FV

    Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV
    Text: RN1101FV~RN1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting


    Original     		PDF RN1101FVRN1106FV RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV RN2101FV RN2106FV RN1104FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV


    Original     		PDF RN1112MFV RN1113MFV RN1112MFV, RN2112MFV RN2113MFVmitation,

    Untitled

    Abstract: No abstract text available
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN2112MFV RN2113MFV RN2112MFV, RN1112MFV RN1113MFV

    RN1110MFV

    Abstract: RN1111MFV RN2110MFV RN2111MFV
    Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN1110MFV RN1111MFV RN2110MFV RN2111MFV RN1111MFV RN2111MFV

    RN1131MFV

    Abstract: RN2131MFV RN2132MFV
    Text: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1131MFV RN1132MFV RN2131MFV RN2132MFV RN2132MFV

    sat 1205

    Abstract: No abstract text available
    Text: RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 z Reduce a quantity of parts and manufacturing process 0.4 1 0.4 0.8±0.05 2


    Original     		PDF RN2119MFV RN1119MFV sat 1205

    Untitled

    Abstract: No abstract text available
    Text: RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.32±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 With built-in bias resistors


    Original     		PDF RN1119MFV RN2119MFV

    L15A

    Abstract: MCM2125A
    Text: MCM2115A 21L15A MCM2125A MCM21L25A M O TO R O LA 1024 x 1 STATIC RAM MOS T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A fa m ilie s a re h ig h -s p e e d , 1024 w o r d s b y o n e -b it, ra n d o m -a c c e s s m e m o rie s fa b ric a te d u s in g H M O S , h ig h ­


    OCR Scan     		PDF MCM2115A MCM2125A MCM2115A) MCM2125A) MCM2115A-MCM21 MCM2125AÂ MCM21 L15A

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


    OCR Scan     		PDF MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF