Untitled
Abstract: No abstract text available
Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)
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GT40T101
2-21F2C
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GT50J301
Abstract: bipolar power transistor data toshiba set igbt on off Vge
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
GT50J301
bipolar power transistor data toshiba
set igbt on off Vge
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GT60M303
Abstract: GT60M303 application GT60M303 circuit
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT60M303
GT60M303
GT60M303 application
GT60M303 circuit
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GT50J322
Abstract: No abstract text available
Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)
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GT50J322
GT50J322
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gt50j322
Abstract: No abstract text available
Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)
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GT50J322
gt50j322
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GT50J301
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
2-21F2C
GT50J301
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GT60M303
Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT60M303
GT60M303
GT60M303 circuit
toshiba code igbt
TOSHIBA IGBT
TOSHIBA IGBT GT60M303
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gt50j102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)
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GT50J102
gt50j102
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GT40M301
Abstract: No abstract text available
Text: GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT40M301
GT40M301
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gt50j102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd. Generation. l Enhancement−Mode. l High Speed. : tf = 0.30µs Max. l Low Saturation Voltage.
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GT50J102
gt50j102
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Untitled
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
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GT40M301
Abstract: No abstract text available
Text: GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit: mm HIGH POWER SWITCHING APPLICATIONS l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed IGBT : tf = 0.25µs TYP.
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GT40M301
GT40M301
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gt50j102
Abstract: 2-21f2c
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)
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GT50J102
gt50j102
2-21f2c
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gt40t101
Abstract: bipolar power transistor data toshiba 2-21F2C
Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement−Mode High Speed : tf = 0.4 µs Max. (IC = 40 A) Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)
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GT40T101
2-21F2C
gt40t101
bipolar power transistor data toshiba
2-21F2C
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Untitled
Abstract: No abstract text available
Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT50J301
2-21F2C
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F2B transistor
Abstract: 3p transistor transistor TO-3P Outline Dimensions transistor 975 transistor 545
Text: Transistor Outline Package TO-3P LH Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 1.0 +0.3 –0.25 26.0 ±0.5 2.0 1.5 3.0 20.0 ±0.6 2.5 2.5 1.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 1 (Bottom view) Toshiba package name Toshiba package code Notes
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21F2A
21F2B
21F2C
F2B transistor
3p transistor
transistor TO-3P Outline Dimensions
transistor 975
transistor 545
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GT60M303
Abstract: TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT60M303
GT60M303
TOSHIBA IGBT GT60M303
GT60M303 application
gt60m303 application notes
2-21F2C
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gt40t101
Abstract: 030619EAA
Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement mode type High speed : tf = 0.4 µs Max. (IC = 40 A) Low saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)
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GT40T101
2-21F2C
gt40t101
030619EAA
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GT50J322
Abstract: No abstract text available
Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)
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GT50J322
GT50J322
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