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Deutsch Relays Abstract: electromagnetic relay M5757/23-001 58614 relay m5757 M5757/23-005 m5757 relay 58614 deutsch relays inc CII 58614 Text: QPL-5757-100 21-Dec-04 SUPERSEDING QPL-5757-99 30-Jan-03 QUALIFICATIONS VALIDATED EVERY TWO YEARS QUALIFIED PRODUCTS LIST OF PRODUCTS QUALIFIED UNDER MILITARY SPECIFICATION MIL-R-5757 RELAY, ELECTROMAGNETIC GENERAL SPECIFICATION FOR Effective 15 October 1998, MIL-R-5757 has been declared "Inactive for New Design" with no superseding specification.	Original	PDF	QPL-5757-100 21-Dec-04 QPL-5757-99 30-Jan-03 MIL-R-5757 MIL-R-5757 MIL-R-5757. -5QPL-5757-100 Deutsch Relays electromagnetic relay M5757/23-001 58614 relay m5757 M5757/23-005 m5757 relay 58614 deutsch relays inc CII 58614
THE M48Z Abstract: No abstract text available Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE	Original	PDF	M48Z512A M48Z512AY, M48Z512AV M48Z512A: M48Z512AY: M48Z512AV: THE M48Z
Untitled Abstract: No abstract text available Text: VTS40100CT VISHAY Vishay Semiconductors New Trench Technology Schottky Barrier Rectifier Ultra Low VF = 0.375 V @ IF = 5 A TO-220AB Major Ratings and Characteristics 2 x 20 A 100 V IFSM 250 A VF @ IF = 20 A 0.61 V TJ max. 150 °C Features • • • • •	Original	PDF	VTS40100CT O-220AB J-STD-020C 21-Dec-04
VTS40100CT Abstract: No abstract text available Text: VTS40100CT VISHAY Vishay Semiconductors New Trench Technology Schottky Barrier Rectifier Ultra Low VF = 0.375 V @ IF = 5 A TO-220AB Major Ratings and Characteristics 2 x 20 A 100 V IFSM 250 A VF @ IF = 20 A 0.61 V TJ max. 150 °C Features • • • • •	Original	PDF	VTS40100CT O-220AB J-STD-020C 21-Dec-04 VTS40100CT
M48Z512A Abstract: M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51 Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of	Original	PDF	M48Z512A M48Z512AY, M48Z512AV M48Z512A: M48Z512AY: M48Z512AV: M48Z512A M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51
Untitled Abstract: No abstract text available Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE	Original	PDF	M48Z512A M48Z512AY, M48Z512AV M48Z512A: M48Z512AY: M48Z512AV:
1N5817 Abstract: AN1012 M48Z512A M48Z512AV M48Z512AY M48Z512BV M68XXX Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of	Original	PDF	M48Z512A M48Z512AY, M48Z512AV* M48Z512A: M48Z512AY: M48Z512AV: M48Z512A/Y/V 304-bit 1N5817 AN1012 M48Z512A M48Z512AV M48Z512AY M48Z512BV M68XXX
Untitled Abstract: No abstract text available Text: 1 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS 16 LTR DESCRIPTION N USE DATE REV PER 0S14-0338-04- WITH DWN APVD JDP JL 21DEC04 P R O - C R IM P E R D D S E E S E P E R A T E R E S T R IC T E D C U S T O M E R	OCR Scan	PDF	0S14-0338-04- 21DEC04 09JAN97 31MAR2000
Untitled Abstract: No abstract text available Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. m m - ] - , - n 0 0 0 0 D .52 l j § .08 \ HOUSING SEE TABLE FOR PERT NO □ II POSITION #1 INDICATOR (FARSIDE) □ _._□ _	OCR Scan	PDF