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    2160 TRANSISTOR DATASHEET Search Results

    2160 TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2160 TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TAJB105KLRH

    Abstract: tic 2160 SXB-2089Z SXB-2089 LL1608-FSR27J MCH185A121JK ML200C an078 MCH185C122KK Sirenza AN-21
    Text: DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details Sirenza Microdevices’ SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &


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    PDF AN-078 SXB-2089Z SXB-2089 450MHz 2140MHz TAJB105KLRH MCH185C122KK 1200pF MCH185A120JK MCH185A010CK tic 2160 LL1608-FSR27J MCH185A121JK ML200C an078 Sirenza AN-21

    s 452-2

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    PDF SL-4522 SL-4522 SL-45221 SL-45222 SL45221 SL45222 EDS-100946 s 452-2

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    PDF SL-4522 SL-4522 SL-45221 SL-45222

    s 452-2

    Abstract: J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
    Text: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    PDF SL-4522 SL-4522 SL-45222 SL-45221 s 452-2 J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222

    Untitled

    Abstract: No abstract text available
    Text: STL80NF3LL N-channel 30V - 0.0045Ω - 80A - PowerFLAT 6x5 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STL80NF3LL 30V <0.0055Ω 20A (1) 1. When mounted on FR-4 board of 1in², 2oz Cu., t<10sec • Improved die-to-footprint ratio


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    PDF STL80NF3LL STL80NF3LL 10sec 0045Ohm

    4312 Fan

    Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
    Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is


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    PDF EMC2102 EMC2102 28pin 4312 Fan pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102-DZK transistor 8331 FAN23

    5000w audio circuit design

    Abstract: AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011
    Text: National Semiconductor Application Note 2160 Michael Hartshorne August 2, 2011 Introduction PCB Features The LM5066EVK evaluation board provides the design engineer with a fully functional intelligent monitoring and protection controller board designed for positive voltage systems.


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    PDF LM5066EVK LM5066 AN-2160 5000w audio circuit design AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011

    1250H

    Abstract: sec d 5072 transistor 2912 TRANSISTOR PNP 4512 3.3v E40H MA 1360H 2864 EEPROM 3296 Variable Resistor 1k ohm 4560 8 pin 970H
    Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each


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    PDF EMC2101 EMC2101 1250H sec d 5072 transistor 2912 TRANSISTOR PNP 4512 3.3v E40H MA 1360H 2864 EEPROM 3296 Variable Resistor 1k ohm 4560 8 pin 970H

    sec d 5072 transistor

    Abstract: 1250h 2912 TRANSISTOR PNP D60H diode 5819 AT24C02B PWM 555 FAN CONTROL 127C 2N3904 2N3906
    Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each


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    PDF EMC2101 EMC2101 MS-012 sec d 5072 transistor 1250h 2912 TRANSISTOR PNP D60H diode 5819 AT24C02B PWM 555 FAN CONTROL 127C 2N3904 2N3906

    Untitled

    Abstract: No abstract text available
    Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each


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    PDF EMC2101 EMC2101

    Untitled

    Abstract: No abstract text available
    Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each


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    PDF EMC2101 EMC2101 MS-012

    Untitled

    Abstract: No abstract text available
    Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each


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    PDF EMC2101 EMC2101 MS-012

    Transistor TT 2140

    Abstract: 1154 sf lna L439 transistor s11 s12 s21 s22 x band GaAs MESFET 261 sf128 diagram transistor tt 2140
    Text: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


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    PDF ATF-521P8 5988-7787EN Transistor TT 2140 1154 sf lna L439 transistor s11 s12 s21 s22 x band GaAs MESFET 261 sf128 diagram transistor tt 2140

    Transistor TT 2140

    Abstract: diagram transistor tt 2140 SF128 ATF-521P8 BCV62B MGA-53543 MO229 RG200D ba 662 CHIP OBSOLETES TT 2170
    Text: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


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    PDF ATF-521P8 5988-7787EN 5988-8403EN Transistor TT 2140 diagram transistor tt 2140 SF128 BCV62B MGA-53543 MO229 RG200D ba 662 CHIP OBSOLETES TT 2170

    Untitled

    Abstract: No abstract text available
    Text: bq24105-Q1 www.ti.com SLUS953A – AUGUST 2009 – REVISED APRIL 2012 SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs bqSWITCHER Check for Samples: bq24105-Q1 FEATURES DESCRIPTION • • The bqSWITCHER™ series are highly integrated Liion and Li-polymer switch-mode charge management


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    PDF bq24105-Q1 SLUS953A

    Transistor TT 2140

    Abstract: SF128 pseudomorphic HEMT A004R ATF-521P8 BCV62B MGA-53543 MO229 RG200D UMTS AND GSM AND PCS
    Text: ATF-521P8 High Linearity Enhancement Mode [1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Avago Technologies’ ATF‑521P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC[3] package.


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    PDF ATF-521P8 ATF521P8 5988-9974EN AV02-0846EN Transistor TT 2140 SF128 pseudomorphic HEMT A004R ATF-521P8 BCV62B MGA-53543 MO229 RG200D UMTS AND GSM AND PCS

    Untitled

    Abstract: No abstract text available
    Text: bq24105-Q1 www.ti.com SLUS953A – AUGUST 2009 – REVISED APRIL 2012 SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs bqSWITCHER Check for Samples: bq24105-Q1 FEATURES DESCRIPTION • • The bqSWITCHER™ series are highly integrated Liion and Li-polymer switch-mode charge management


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    PDF bq24105-Q1 SLUS953A bq24105

    Untitled

    Abstract: No abstract text available
    Text: m HA-2548 HARRIS S E M I C O N D U C T O R Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Description Features • High Slew Rate. 120V/ns • Low Offset Voltage. 300^V


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    PDF HA-2548 HA-2548 150MHz 20V/jis 130dB 50ns/Div

    Untitled

    Abstract: No abstract text available
    Text: f f l H A R R HA-2548 I S S E M I C O N D U C T O R Precision, High Slew Rate, Wideband Operational Amplifier March1993 Features • Description High Slew Rate. 120V/ iS • Low Offset Voltage. 300^V


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    PDF HA-2548 rch1993 130dB 150MHz 2N4415 HP5082-2810 HA-2546 50ns/Div

    ITZ15F12

    Abstract: ITZ15F12P T0247
    Text: @ M IT E L ITZ15F12 - _ Powerline N-Channel IGBT S E M IC O N D U C T O R . . . , A dvance Inform ation DS5053-1.2 January 1999 The ITZ15F12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a


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    PDF ITZ15F12 DS5053-1 ITZ15F12 ITZ15F12P T0247

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICON] SECTOR LIE ]> • HA-2548 3 “ SH S Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Features • Description High Stow • Low Offset


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    PDF HA-2548 HA-2548 150MHz 130dB 300nV HP5082-2810 50ns/Dlv HA-2543

    ITZ15C12P

    Abstract: T0247 dc chopper circuit DS5071
    Text: ITZ15C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5071 - 1.1 January 1999 The ITZ15C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a


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    PDF ITZ15C12 DS5071 ITZ15C12 ITZ15C12P T0247 dc chopper circuit

    Untitled

    Abstract: No abstract text available
    Text: MIC5022 Half-Bridge MOSFET Driver Preliminary Information General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz and is an ideal choice for high speed applications such as motor control and SMPS


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    PDF MIC5022 MIC5022 100kHz 2000pF 2200pF 50kHz

    tip 3035 transistor

    Abstract: relay NAIS 5v 5 pin MJE350 equivalent L3035 rele nais 727HC nais relay 12V 10 A W 8 pin nais relay cross reference tip 147 TRANSISTOR equivalent diode duj
    Text: r = J S G S -T H O M S O N ^ 7 # « , M l© ilL i § T [H M a © S L3035 L3036 S U BSCRIBER LINE INTERFACE C IR C U IT PRELIMINARY DATA • MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS ■ IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION


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    PDF L3035 L3036 L3035) PLCC44 PQFP44) 00b3423 00b3424 tip 3035 transistor relay NAIS 5v 5 pin MJE350 equivalent rele nais 727HC nais relay 12V 10 A W 8 pin nais relay cross reference tip 147 TRANSISTOR equivalent diode duj