ir receiver module sj 1838
Abstract: kbu 810 g rba9 Nippon capacitors 665a
Text: H8S/2114 Group 16 Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2114 Rev.1.00 2003.10.31 R4F2114 Rev. 1.00, 10/03, page ii of xlii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products
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H8S/2114
16-Bit
H8S/2100
R4F2114
REJ09B0098-0100Z
ADE-602-308)
ir receiver module sj 1838
kbu 810 g
rba9
Nippon capacitors
665a
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2114 1k x 4 SRAM
Abstract: 2114 static ram 2114 ram 2114 SRAM sram 2114 OSC CMOS 32.768K ST2108 2063 static ram btm 330 LA 4440
Text: ST Sitronix PRELIMINARY ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES n n n n n n n n n n Totally static 65C02S CPU ROM: 1M x 8-bit RAM: 4K x 8-bit Stack: Up to 128-level deep
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ST2108
65C02S
128-level
timer/16-bit
Table13-3
Page38
Page39
Page43.
Page18
2114 1k x 4 SRAM
2114 static ram
2114 ram
2114 SRAM
sram 2114
OSC CMOS 32.768K
ST2108
2063 static ram
btm 330
LA 4440
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2114 static ram
Abstract: sram 2114 2114 ram RAM 2114 psg010 2114 1k x 4 SRAM 2114 SRAM 4 bit dac OSC CMOS 32.768K 2063 static ram
Text: ST ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES Totally static RISC CPU
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ST2108
128-level
timer/16-bit
2114 static ram
sram 2114
2114 ram
RAM 2114
psg010
2114 1k x 4 SRAM
2114 SRAM
4 bit dac
OSC CMOS 32.768K
2063 static ram
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rs-flip-flop
Abstract: V40511D u555c V40098D UB855D UB8830D TC8066PB UB857D V4007D UB880D
Text: RFT Beschreibung Valvo RCA Zilog Intel Toshiba 4,19 MHz Uhrenchip für Analog-Uhren Uhrenchip für analoge Armbanduhren TC8066PB U118F U125D 32 kHz Uhrenschaltkreis analog T3648A U130X 32 kHz Uhrenchip für digitale LCD-Quarzuhren 32 kHz Uhrenchip für digitale
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TC8066PB
U118F
U125D
T3648A
U130X
U114D
U117X
U131G
U132X
E1156/1201
rs-flip-flop
V40511D
u555c
V40098D
UB855D
UB8830D
TC8066PB
UB857D
V4007D
UB880D
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MUX 74157
Abstract: CMOS 4011 AT89C2051 MICROCONTROLLER cmos 4040 74157 mux Microcontroller - AT89C2051 instruction set WE Y1 P3_6 DAQS panel-meter Microcontroller AT89C2051
Text: PC-Interfaced Data Acquisition System with the Atmel AT89C2051 Microcontroller Introduction The features of the Atmel AT89C2051 microcontroller offer the user the chance to achieve a very low-cost/performance data acquisition system DAQS for low-frequency applications.
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AT89C2051
AT89C2051
MUX 74157
CMOS 4011
AT89C2051 MICROCONTROLLER
cmos 4040
74157 mux
Microcontroller - AT89C2051 instruction set
WE Y1 P3_6
DAQS
panel-meter
Microcontroller AT89C2051
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reloading
Abstract: AC258 memory 2114
Text: Application Note AC258 Context Save and Reload with Real-Timestamp Introduction To reduce power, many systems will store needed data, suspend operation, or turn off components and return power when needed. For this context saving and switching, designers must have nonvolatile
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AC258
reloading
AC258
memory 2114
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ir 7811
Abstract: IMPLOTEC philips 23 Philips 336 TA 2092 N BP317 BYD33J
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS Fact Sheet 079 High-quality glass-passivated diodes Implotec BYD33J competitor investigation This publication offers a direct comparison between Philips Semiconductors’ glass-passivated BYD33J diode family (based on
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BYD33J
BYD33J
DO-41
ir 7811
IMPLOTEC
philips 23
Philips 336
TA 2092 N
BP317
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BYV27-200 DO-41
Abstract: philips 23 Philips 336 TA 2092 N BP317 BYV27-200
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS Fact Sheet 080 High-quality glass-passivated diodes Glass Bead BYV27-200 competitor investigation This publication offers a direct comparison between Philips Semiconductors’ BYV27-200 Glass Bead diode family and two
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BYV27-200
BYV27-200
BYV27-200,
DO-41
BYV27-200 DO-41
philips 23
Philips 336
TA 2092 N
BP317
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battery drill charger
Abstract: AC262 battery management
Text: Application Note AC262 Smart Battery Management Applications Developed in the late 1990s to de-couple charging technology from battery chemistry and support platform independence for interchangeable battery modules, Smart Batteries are popping up in everything from laptop computers and cell phones to cordless drills and hand held vacuum cleaners.
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AC262
1990s
battery drill charger
AC262
battery management
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uaa3590
Abstract: uaa3545 PCD50912 PCD509XY philips Basestation Starburst PCF2113 PCF2119 PCF8533 PCF8576C
Text: The PCD509XY Baseband controller and UAA3545/UAA3590 DECT Low-IF/PA RF ICs build a complete solution providing the advantage of low-cost, high performance and easy manufacturing of advanced digital cordless phones. The Next Generation! RF ICs The UAA3545 transceiver IC comprises an LNA, image-rejection
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PCD509XY
UAA3545/UAA3590
UAA3545
PCD509XY.
UAA3590
PCD50912
philips Basestation
Starburst
PCF2113
PCF2119
PCF8533
PCF8576C
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BP317
Abstract: BYX134GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D458 BYX134GL High-voltage car ignition diode Product specification 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
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M3D458
BYX134GL
OD119AC
603502/01/pp4
BP317
BYX134GL
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BFG425W
Abstract: BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes
Text: APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook, full pagewidth C6 R1 R4 R3 C2 C3 +Vsupply C4 L2 L1 input 50 Ω C5
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BFG425W
MGS733
125006/01/pp8
BFG425W
BP317
micro amplifier 471
Hewlett-Packard transistor microwave
philips 23
0805CS
philips application notes
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BP317
Abstract: BYX132GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
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M3D354
BYX132GL
OD119AB
135002/01/pp4
BP317
BYX132GL
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BGA2771
Abstract: philips 23 BGA2711 BGA2748 BGA2776 BP317
Text: Philips Semiconductors Philips Semiconductors’ new family of MMIC Gain Blocks is optimized to meet the requirements of a broad range of functions in mobile communications, cable systems, infrared interfacing and ISM-band applications. Offering simple selection for fast design turnaround and
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SCB71
BGA2771
philips 23
BGA2711
BGA2748
BGA2776
BP317
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D459 BYX135GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GL FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed
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M3D459
BYX135GL
OD119AD
135002/01/pp4
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information applikation
Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond
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Halbleiterbauelemente DDR
Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)
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R-1035
Halbleiterbauelemente DDR
transistor vergleichsliste
u82720
Datenblattsammlung
VEB mikroelektronik
aktive elektronische bauelemente ddr
mikroelektronik datenblattsammlung
je 3055 Motorola
mikroelektronik DDR
Transistor Vergleichsliste DDR
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM538022C 5 24,288-W ord x 16-B it or 1,048,576-W ord x 8-B it M ask ROM DESCRIPTION The OKI M SM 538022C is a high-speed CM OS Mask ROM that can electrically switch betw een 524,288word x 16-bit and 1,048,576-word x 8-bit configurations. The M SM 538022C operates on a single 5.0 V
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MSM538022C
538022C
288word
16-bit
576-word
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM538022C 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit M ask ROM DESCRIPTION The OKI MSM538022C is a high-speed CMOS Mask ROM that can electrically switch between 524,288word x 16-bit and 1,048,576-word x 8-bit configurations. The MSM538022C operates on a single 5.0 V
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MSM538022C
288-Word
16-Bit
576-Word
MSM538022C
288word
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2114s
Abstract: 2111S DLG 3416 2114-S 2113S 2112S pdsp 2113 AT/concept 2114s Q68000-A8907 2115S
Text: Intelligente LED-Anzeigen Intelligent Displays Einzelbausteine Fortsetzung Display Devices (continued) 8 -s te llig e 5 x 7 -P u n k tm a trix 8 d ig it 5 x 7 d o t m atrix Type/ Color No. of characters Character height Viewing angle x-/y-axis No. of dots
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HDSP2110S
2111S
2112S
2113S
2114S
2115S
Q68000-A8474
1414T.
Q68000-A8091
Q68000-A8092
DLG 3416
2114-S
pdsp 2113
AT/concept 2114s
Q68000-A8907
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B101S
Abstract: No abstract text available
Text: PCMCIA/JEIDA UNPROGRAMED ONE TIME PROGRAMABLE ROM 1. VARIATION Part Number BW B065SD* BW B129SD* BW B257SD* BW B513SD* BW B101SD* BW B201SD* Description Memory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE 32K x 64K x 128K x 256Kx 512K x
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B065SD*
B129SD*
B257SD*
B513SD*
B101SD*
B201SD*
256Kx
BWB065,
BWB129,
BWB257,
B101S
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M5M27401AK12
Abstract: M5M27401AK-15 M5M27401
Text: MITSUBISHI LSIs M 5M 27401A K - 10,- 12,- 15 4194304-BIT 524288-WORD BY 8-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M5M27401AK is a high-speed 4194304-bit ultraviolet erasable and electrically reprogrammable read only
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7401A
4194304-BIT
524288-WORD
M5M27401AK
M5M27401AK
M5M27401AK12
M5M27401AK-15
M5M27401
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Untitled
Abstract: No abstract text available
Text: bEH'lñSS DD2 3 Gbñ M ITI DAR MITSUBISHI LSls M5 M2 7401 A K - 1 0 ,- 1 2 ,-1 5 4194304-BIT 524288-WORD BY 8-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5 M 2 7 4 0 1 A K is a high-speed 4 1 9 4 3 0 4 -b it
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4194304-BIT
524288-WORD
M5M27401AK
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K4096
Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Text: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E
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AM2101/9101
AM2111/9111
AM2112/9112
AM2102/9102
AM9060
AM9216
AM9208
AM1402
AM2807
AM2808
K4096
Motorola 6830
M 2530 motorola
KS 2102
intel 2101
INTEL 1404A
Signetics 2518
AM9216
9316A
2627 "cross reference"
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