64256
Abstract: lh64256 LH64256BD 20-PIN 26-PIN
Text: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words × 4 bit The LH64256B is a 262,144 word × 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’s advanced CMOS double-level polysilicon gate technology. With its input
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LH64256B
LH64256B
20-pin
26-pin
20ZIP
ZIP020-P-0400)
20ZIP-2
64256
lh64256
LH64256BD
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its
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KM44C256CL
256Kx4
KM44C256CL
KM44C256C
110ns
KM44C256CL-7
130ns
KM44C256CL-8
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 KM44C256C G D l S 4 b O b4b CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design
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KM44C256C
256Kx4
KM44C256C
144x4
KM44C256C-6
110ns
130ns
KM44C256C-8
KM44C256C-7
150ns
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Untitled
Abstract: No abstract text available
Text: KA8310 2-PHASE DD MOTOR DRIVER 2-PHASE DD MOTOR DRIVER 20-ZIP-325 The KA8310 is a monolithic integrated circuit for 2-phase full wave linear DO motor driving. This IC contains hatl AM P, control circuit, CW /CO N circuit, thermal shutdown circuit and motor drivers.
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KA8310
20-ZIP-325
KA8310
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LH61665AK
Abstract: BS40 LH62800K-60 LH62800K-50 LH61664AN lh61665 LH61664
Text: MEMORIES Fast Page Mode Dynamic RAMs Capacity Bit configuration M o d e l No. Access time ns M AX. C ycle time (ns) MIN. S u p p ly cu rre n t Fast O p e ra tin g S t a n d b y ¡page mode (mA) M AX. (mA) M AX. 1 LH 64256CK-50 50 100 LH64256CD/CK/CZ/CT-60
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64256CK-50
LH64256CD/CK/CZ/CT-60
20ZIP/26TSOP
26SOJ/26TSOP
LH64256CD/CK/CZ/CT-70
LH6V4256CK/CS-10
LH68128K-45
LH68128K-50
LH68128K-55
LH68128K-70
LH61665AK
BS40
LH62800K-60
LH62800K-50
LH61664AN
lh61665
LH61664
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LH64256BK70
Abstract: Lh64256bk-70
Text: MEMORIES ★Under development • Pseudo S tatic RAMs Gipäfifty rüm ^H M o n Modal No. worfexblta t LH5P832/D/N-10 256k Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. (na) MIN. 100 160 (mA) MAX. Supply voltage M Control signal« 65/3 32k x 8
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LH5P832/D/N-10
28DIP/
28SK-DIP/
28SOP
32DIP/32SOP
32SOP
40DIP/40SOP
LH5P832/D/N-12
LH5P860/N-80
LH5P864N-80
LH64256BK70
Lh64256bk-70
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DRAM 256kx4
Abstract: No abstract text available
Text: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C256CSL
256Kx4
KM44C256CSL
KM44C256CSL-6
KM44C25254
20-LEAD
DRAM 256kx4
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41C1000
Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000C
KM41C1000C
576x1
KM41C1000C-6
KM41C1000C-7
KM41C100
20-LEAD
41C1000
KM41C1000CJ-7
1mx1 DRAM DIP
41C100
KM41C1000C-8
KM41C1000CJ7
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LH61664AK-50
Abstract: LH61665AK lh61665 LH5PV8512 16256S
Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating
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LH5P864N
5P1632/N-80/15
32SOP
DIP/40SOP
32DIP/32SOP/32TSOP
32TSOP
DIP/32SOP/32TSOP(
/32TS
44TSO
LH61664AK-50
LH61665AK
lh61665
LH5PV8512
16256S
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LH64400CK-70
Abstract: lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70
Text: MEMORIES Dynamic RAMs ★ U n d e r d e v e lo p m e n t C apacity Configuration Model No. Mode A ccess tim e ns 50 256k 256k x 1 Page mode LH21256 256kx4 Fast page mode LH64256B 6 4 k x 16 Fast page mode LH61664 256kx8 Fast page mode LH62800 Fast page mode
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LH21256
256kx4
LH64256B
LH61664
256kx8
LH62800
LH64400C
LH64405
LH64260
LH6S4260
LH64400CK-70
lh61664
LH62800K-60
LH64400
lh64260
LH64400CK-60
20DIP
LH62800
LH61664N
LH61664 K-70
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1000CLP
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
KM41C1000CL-7
KM41inued)
20-LEAD
1000CLP
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C256CSL
256Kx4
KM44C256CSL
KM44C256CSL-6
KM44C20
20-LEAD
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NIA4M
Abstract: km44c256cp-7 km44c256cj-6 km44c256cj-7 KM44C256CP7 km44c256cp-8 km44c256cz-7 km44c256cp KM44C256CZ-6 KM44C256CP-6
Text: SAMSUNG ELECTRONICS INC b?E » WË 7^4142 KM44C256C DG154bO b4b SH6K CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance rang«: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design
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KM44C256C
71h41H2
D0154bG
256Kx4
KM44C256C-6
110ns
KM44C256C-7
130ns
KM44C256C-8
150ns
NIA4M
km44c256cp-7
km44c256cj-6
km44c256cj-7
KM44C256CP7
km44c256cp-8
km44c256cz-7
km44c256cp
KM44C256CZ-6
KM44C256CP-6
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km44c256c
Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Text: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CL_
DD15477
256Kx4
KM44C256CL-6
110ns
KM44C256CL-7
130ns
KM44C256CL-8
150ns
200pA
km44c256c
CP172
KM44C256CLP-7
KM44C256CLP8
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KM44C256
Abstract: No abstract text available
Text: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C256CSL
256Kx4
KM44C256CSL
144x4
110ns
KM44C256CSL-7
130ns
KM44C256CSL-8
150ns
M44C256CS
KM44C256
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
110ns
KM41C1000CL-7
130ns
KM41C1000CL-8
150ns
GD1S412
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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km41c1000cj-6
Abstract: KM41C1000C-7 KM41C1000C-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ
Text: CMOS DRAM KM41C1000C 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000C
KM41C1000C-6
KM41C1000C-7
KM41C1000C-8
110ns
130ns
150ns
KM41C1000C
576x1
km41c1000cj-6
m4lc
KM41C1000CJ-7
KM41C1000CP
KM41C1000CJ
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MELPS 7700
Abstract: laser diode driver circuit automatic power contro m35701 mitsubishi servo controller MELPS7700 M54683FP MITSUBISHI MELPS 7700 basic electric circuit diagram Laser diode driver for optical disk
Text: IC KIT FOR ODD SEMICONDUCTOR MORE PRODUCT LINES OF ICs FOR ODD CONTRIBUTING MINIATURIZATION, LOW POWER DISSIPATION AND HIGH SPEED New s D E S C R I P T I O N OF P R O D U C T •M52870FP This head amplifier for optical pickup has a current-voltage conversion circuit
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M52870FP*
M52870FP
M64400FP
M35701E2AXXXFP
MELPS 7700
laser diode driver circuit automatic power contro
m35701
mitsubishi servo controller
MELPS7700
M54683FP
MITSUBISHI MELPS 7700
basic electric circuit diagram
Laser diode driver for optical disk
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44c256
Abstract: KM44C256 KM44C256CSL-7 KM44C256CSL-8 18 pins KM44C256
Text: SAMSUNG E L E C TRONICS INC b?E D • 71^142 KM44C256CSL O O I S M 1^ TER SUGK CM OS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CSL
256Kx4
44C256CS
110ns
KM44C256CSL-7
130ns
KM44C256CSL-8
150ns
100fiA
cycle/128ms
44c256
KM44C256
18 pins KM44C256
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ ^ 4 1 4 2 00154*1 *4 T 2 R KM44C256CSL CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CSL
256Kx4
KM44C256CSL
KM44C256CSL-6
110ns
130ns
KM44C256CSL-8
KM44C256CSL-7
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CSL
KM41C1000CSL
576x1
KM41C1000CSL-6
110ns
KM41C1000CSL-7
130ns
KM41C1000CSL-8
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000C
KM41C1000C
576x1
KM41C1000C-7
130ns
KM41C1000C-8
KM41C1000C-6
150ns
20-LEAD
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
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