Untitled
Abstract: No abstract text available
Text: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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R1120A
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279-87
Abstract: "15 GHz" power amplifier 41dBm GRM36 HK1005 HK1608 NJG1106KB2 29nF
Text: NJG1106KB2 800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1106KB2 is a low noise amplifier GaAs MMIC designed for 800MHz band cellular phone handsets. This amplifier provides low noise figure of 1.3dB and low current consumption of 3mA at low supply voltage
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NJG1106KB2
800MHz
NJG1106KB2
820MHz
13dBm
279-87
"15 GHz" power amplifier 41dBm
GRM36
HK1005
HK1608
29nF
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asynchronous fifo vhdl
Abstract: 8 BIT ALU design with verilog/vhdl code full subtractor using ic 74138 74139 for bcd to excess 3 code vhdl code for 8bit bcd to seven segment display 32 BIT ALU design with verilog/vhdl code 74594 16 BIT ALU design with verilog/vhdl code B1516 RAM1024
Text: QuickWorks User Manual with SpDE Reference Release 2009.2.1 Contact Information QuickLogic Corporation 1277 Orleans Drive Sunnyvale, CA 94089 Phone: (408) 990-4000 (US) (905) 940-4149 (Canada) +(44) 1932-57-9011 (Europe) +(852) 2567-5441 (Asia) E-mail: [email protected]
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DVFN240S
Abstract: No abstract text available
Text: QS8K13 Datasheet Dual Nch 30V 6.0A Power MOSFET lOutline VDSS 30V RDS on (Max.) 28mW ID 6A PD 1.5W lFeatures TSMT8 (8) (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K13
R1120A
DVFN240S
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Untitled
Abstract: No abstract text available
Text: QS8K11 QS8K11 Datasheet Dual Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K11
R1120A
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Untitled
Abstract: No abstract text available
Text: RRH140P03 Pch -30V -14A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 7mW ID -14A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH140P03
R1120A
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Untitled
Abstract: No abstract text available
Text: RQ1E075XN Nch 30V 7.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 17mW ID 7.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E075XN
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8J11 Pch -12V -3.5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 43mW ID -3.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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QS8J11
R1120A
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Untitled
Abstract: No abstract text available
Text: RRH050P03 Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH050P03
R1120A
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Untitled
Abstract: No abstract text available
Text: RQ1C075UN Nch 20V 7.5A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 16mW ID 7.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) 1.5V Drive. 3) Built-in G-S Protection Diode.
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RQ1C075UN
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8J4 Pch -30V -4A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 56mW ID -4A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).
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R1102A
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Untitled
Abstract: No abstract text available
Text: QS8K11 Datasheet Dual Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K11
R1120A
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Untitled
Abstract: No abstract text available
Text: RQ1A070AP Pch -12V -7A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 14mW ID -7A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1A070AP
R1120A
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Untitled
Abstract: No abstract text available
Text: RRH140P03 Pch -30V -14A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 7mW ID -14A PD 2.0W lFeatures SOP8 (7) (5) (6) (8) (4) (3) (1) (2) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH140P03
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8K12 Nch 30V 4A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 42mW ID 4A PD 1.5W lFeatures (8) TSMT8 (1) (2) (3) (7) (6) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).
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QS8K12
R1102A
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Untitled
Abstract: No abstract text available
Text: QS8J12 Datasheet Pch -12V -4.5A Power MOSFET lOutline VDSS -12V RDS on (Max.) 29mW ID -4.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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QS8J12
R1120A
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Untitled
Abstract: No abstract text available
Text: RQ1E075XN Datasheet Nch 30V 7.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 17mW ID 7.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E075XN
R1120A
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qs8k11
Abstract: No abstract text available
Text: QS8K11 Dual Nch 30V 3.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K11
R1120A
qs8k11
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Untitled
Abstract: No abstract text available
Text: QS8J4 Pch -30V -4A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 56mW ID -4A PD 1.5W lFeatures (8) TSMT8 (1) (2) (3) (7) (6) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).
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R1102A
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Untitled
Abstract: No abstract text available
Text: QS8K2 Datasheet Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 54mW ID 3.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).
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R1102A
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R5F72167ADFA
Abstract: Renesas HVGA R5F72434 R5S76700D133BG R5S72641P144FP R5F7286 SH7264 R5S72645P144FP SH-2A SH7147
Text: 32-bit SuperH SH-2 and SH-2A Controllers for Embedded Systems Factory Automation Networking/Peripherals Entertainment Medical Automotive Home Appliances SuperH SH-2 and SH-2A Controllers Scalable 32-bit RISC controllers for feature-rich embedded applications
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32-bit
REU01B0037-0010
0809/5K/VIP/BCD/SP
256BGA,
17x17x0
R5F72167ADFA
Renesas HVGA
R5F72434
R5S76700D133BG
R5S72641P144FP
R5F7286
SH7264
R5S72645P144FP
SH-2A
SH7147
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Untitled
Abstract: No abstract text available
Text: QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 36mW ID -4A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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R1120A
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Untitled
Abstract: No abstract text available
Text: RQ1E100XN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E100XN
R1120A
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Untitled
Abstract: No abstract text available
Text: DC AXIAL FAN 20x20x06mm Housing/Blade: Thermoplastic PBT, UL 94V-0 Insulation Resistance: 1 0 M £2, 500VD C /m in betw een bare w ire and fram e D ielectric Strength: 5 m A max. 500VAC/m in betw een bare w ire and fram e O p e ra tio n Temperature: -10°C~70°C Humidity 35%-85%RH
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20x20x06mm
500VD
500VAC/m
mm-H20)
FD2006B05W5-71
FD2006B05W7-71
FD2006B12W5-71
FD2006B12W7-71
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