utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305G-AE2-R
UT2305G-AE3-R
UT2305G-AG3-R
OT-23-3
OT-23
OT-26
OT-23
QW-R502-133
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
UT2305L-AG3-R
UT2305G-AG3-R
OT-23-3
OT-23
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MLP832
Abstract: ZXMP62M832 ZXMP62M832TA
Text: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure
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ZXMP62M832
MLP832
ZXMP62M832
ZXMP62M832TA
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Si6953DQ
Abstract: No abstract text available
Text: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6953DQ
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Untitled
Abstract: No abstract text available
Text: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6953DQ
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IRF P CHANNEL MOSFET
Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV
Text: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International
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PD-93998
IRF5851
requi05
IRF5806
IRF P CHANNEL MOSFET
irf p channel
IRF5851
IRF5800
IRF5850
SI3443DV
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IRF P CHANNEL MOSFET
Abstract: IRF5800 IRF5850 IRF5851 SI3443DV
Text: PD-93998A IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International
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PD-93998A
IRF5851
requ805
IRF5806
IRF P CHANNEL MOSFET
IRF5800
IRF5850
IRF5851
SI3443DV
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IRL5NJ7404
Abstract: No abstract text available
Text: PD - 94052 LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRL5NJ7404
IRL5NJ7404
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IRL5NJ7404
Abstract: No abstract text available
Text: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4052A
IRL5NJ7404
IRL5NJ7404
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Untitled
Abstract: No abstract text available
Text: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4052A
IRL5NJ7404
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Untitled
Abstract: No abstract text available
Text: AP4500GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low Gate Charge N-CH BVDSS D2 RDS ON D1 D1 ▼ Fast Switching Performance 20V 30mΩ ID G2 -20V P-CH BVDSS S2
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AP4500GM
100us
100ms
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IRF7425
Abstract: MS-012AA
Text: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
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IRF7425
IRF7425
MS-012AA
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.
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UT3419
UT3419
UT3419G-AE2-R
UT3419G-AE3-R
OT-23-3
OT-23
QW-R502-391
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IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
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IRF5850
Abstract: No abstract text available
Text: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5850
IRF5850
OT-23
i252-7105
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Untitled
Abstract: No abstract text available
Text: PD-94052B LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A SMD-0.5 Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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PD-94052B
IRL5NJ7404
IRL5NJ7404
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Untitled
Abstract: No abstract text available
Text: AP4527GN3 Preliminary Advanced Power Electronics Corp. Bottom Exposed DFN N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 Low On-resistance D2 D2 N-CH BVDSS RDS ON Lower Profile DFN3*3 RoHS Compliant 20V G1 S1 35m ID S2 G2 4.7A P-CH BVDSS -20V RDS(ON)
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AP4527GN3
100ms
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Untitled
Abstract: No abstract text available
Text: AP4502GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D2 D2 Low Gate Charge 20V RDS ON D1 D1 18m ID Fast Switching Performance SO-8 S1 S2 G1 G2 8.3A P-CH BVDSS -20V
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AP4502GM
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP4500GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 Low Gate Charge N-CH BVDSS D2 20V RDS ON D1 D1 30m ID Fast Switching Performance G2 P-CH BVDSS S2 SO-8 6A G1 S1 -20V
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AP4500GM
100us
100ms
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IRF5851
Abstract: n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac
Text: PD-93998B IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced
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PD-93998B
IRF5851
IRF5851
n-p channel mosfet tsop6
IRF5800
SI3443DV
TSOP 66 Package thermal resistance
sot-23 MARKING CODE G1
variac
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marking 2P
Abstract: FDG332PZ SC70-6 FDG332PZ marking
Text: FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m: Features General Description Max rDS on = 95m: at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
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FDG332PZ
SC70-6
marking 2P
FDG332PZ
SC70-6
FDG332PZ marking
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FDG332PZ
Abstract: SC70-6
Text: FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97mΩ Features General Description Max rDS on = 95mΩ at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
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FDG332PZ
SC70-6
FDG332PZ
SC70-6
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UG 77A DIODE
Abstract: mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
Text: PD - 9.1568A International IGR Rectifier IRF7317 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSFET î _8 IS 2 Voss • & P-Ch 20V -20V
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OCR Scan
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IRF7317
C-142
C-143
UG 77A DIODE
mosfet p-channel 300v
MOSFET N-CH 200V
DT92A
international rectifier 137
IRF7317
ug 77A
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