41698
Abstract: SUM110N02-03
Text: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)a 20 0.0026 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
|
Original
|
PDF
|
SUM110N02-03
O-263
SUM110N02-03--E3
S-41698--Rev.
20-Sep-04
41698
SUM110N02-03
|
marking code vishay SILICONIX sot-23
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
PDF
|
Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
08-Apr-05
marking code vishay SILICONIX sot-23
|
SUU50N03-09P
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
|
Original
|
PDF
|
SUU50N03-09P
O-251
SUU50N03-09P--E3
Curre10
S-41696--Rev.
20-Sep-04
SUU50N03-09P
|
25C1024
Abstract: No abstract text available
Text: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)a 20 0.0026 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
|
Original
|
PDF
|
SUM110N02-03
O-263
SUM110N02-03--E3
08-Apr-05
25C1024
|
SUU50N03-09P
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
|
Original
|
PDF
|
SUU50N03-09P
O-251
SUU50N03-09P--E3
08-Apr-05
SUU50N03-09P
|
WinFlink.exe
Abstract: UM0050 programming 80c51 counter with 7 segment lcd UPSD3251F dongle diagram flow design UPSD325X uPSD32xx nec mcu ABEL-HDL Reference Manual cut template DRAWING
Text: UM0050 USER MANUAL PSDsoft Express Design Software Tool for PSD and uPSD Families INTRODUCTION PSDsoft Express is the design software for the PSD and uPSD Programmable System Device families of parts. This new design tool allows you to easily integrate a PSD/uPSD into your design using a simple
|
Original
|
PDF
|
UM0050
WinFlink.exe
UM0050
programming 80c51 counter with 7 segment lcd
UPSD3251F
dongle diagram flow design
UPSD325X
uPSD32xx
nec mcu
ABEL-HDL Reference Manual
cut template DRAWING
|
A016 SMD
Abstract: M8340102K smd marking code A008 smd A018 MDP1603 a015 SMD AC 31061 10k resistor array SIP a014 SMD transistor a015 SMD
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book rEsIStor ARRays and Networks vishay DALE vsD-db0011-0410 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
PDF
|
vsD-db0011-0410
A016 SMD
M8340102K
smd marking code A008
smd A018
MDP1603
a015 SMD
AC 31061
10k resistor array SIP
a014 SMD
transistor a015 SMD
|
SUU50N03-09P
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
|
Original
|
PDF
|
SUU50N03-09P
O-251
SUU50N03-09P--E3
18-Jul-08
SUU50N03-09P
|
W46BAA
Abstract: Si4816DY Si4816DY-T1
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (Ω) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 FEATURES
|
Original
|
PDF
|
Si4816DY
Si4816DY-T1
Si4816Dre
S-41697--Rev.
20-Sep-04
W46BAA
|
Si2302ADS-T1
Abstract: Si2302ADS Si2302DS
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
PDF
|
Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
S-41772--Rev.
20-Sep-04
|
Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT “ .— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR B 0.070 THRU HOLE i ’C” SQ @ 7 17 @ §V « (o » ’C” SQ, IB il 20 0.062 SOLDER PAD
|
OCR Scan
|
PDF
|
20SEP04
31MAR2000
|
I22J
Abstract: RG-402 RG402 75 Ohm
Text: R E V 1S I O N S 930 - 1 2 2 J - 5 1 S NOTES: I MATERIALS AND FINISHES: BODY - B T A S S , GOLD PLATING .000030 MIN THICK CON T AC T - BE R YL LIU M COPPER, GOLD PLATING (.000030 MIN THICK) INSULATOR - PTFE HEX NUT - BRASS, G O L D P LA TI NG (. 000 010 MIN THICK)
|
OCR Scan
|
PDF
|
22J-51S,
930-I22J-5IS
I5X-2042-1
20-Sep-04
I2-May-04
RG-402/
\QMA\930-1
I22J
RG-402
RG402 75 Ohm
|
Untitled
Abstract: No abstract text available
Text: Drwg. No. CU-120220-0161-K 2.18 MAX MINIMUM CONTACT FORCES SHOWN CARRIER CUT TOLERANCE +0.25N / -0.0 N OFF POINT INITIAL FORCE AT 215MM COMPRESSION : , ^ ^ , 1 I1 - h — l 7 I H \K SCALE INITIAL FORCE AT 2.35MM COMPRESSION 0.39N APPLYING LOAD] 0.32N IUNAPPLYING LOAD]
|
OCR Scan
|
PDF
|
CU-120220-0161-K
215MM
CU-120220-0210
24-May-05
|