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Catalog Datasheet	MFG & Type	PDF	Document Tags
IS-136 Abstract: No abstract text available Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG132G L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.	Original	PDF	PG132G PG132G IS-136
diagram of isl ic Abstract: IS-136 UPG133G 131G Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.	Original	PDF	PG133G UPG133G diagram of isl ic IS-136 131G
Untitled Abstract: No abstract text available Text: FDPC8016S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to	Original	PDF	FDPC8016S
Untitled Abstract: No abstract text available Text: FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to	Original	PDF	FDPC8014S
Untitled Abstract: No abstract text available Text: FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to	Original	PDF	FDPC8014S