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    20N60B Search Results

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    20N60B Price and Stock

    Micro Commercial Components MSJPFR20N60-BP

    N-CHANNEL MOSFET,TO-220AB(H)
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    DigiKey MSJPFR20N60-BP Tube 2,000 1
    • 1 $3.32
    • 10 $2.16
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    Mouser Electronics MSJPFR20N60-BP 1,988
    • 1 $2.5
    • 10 $2.08
    • 100 $1.66
    • 1000 $1.21
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    Micro Commercial Components MSJPFFR20N60-BP

    N-CHANNEL MOSFET,TO-220F
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    DigiKey MSJPFFR20N60-BP Tube 1,996 1
    • 1 $3.32
    • 10 $2.16
    • 100 $3.32
    • 1000 $1.12946
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    Mouser Electronics MSJPFFR20N60-BP 2,000
    • 1 $2.5
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    IXYS Corporation IXGX320N60B3

    IGBT PT 600V 500A PLUS247-3
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    DigiKey IXGX320N60B3 Tube 300 1
    • 1 $31.95
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    • 100 $23.389
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    Mouser Electronics IXGX320N60B3 286
    • 1 $31.95
    • 10 $28.33
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    TTI IXGX320N60B3 Tube 300
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    TME IXGX320N60B3 14 1
    • 1 $26.69
    • 10 $21.44
    • 100 $19.86
    • 1000 $19.86
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    IXYS Corporation IXGK320N60B3

    IGBT 600V 500A 1700W TO264
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    DigiKey IXGK320N60B3 Tube 283 1
    • 1 $35.53
    • 10 $35.53
    • 100 $26.6072
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    Mouser Electronics IXGK320N60B3 132
    • 1 $35.53
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    TME IXGK320N60B3 1
    • 1 $25.11
    • 10 $20.17
    • 100 $17.97
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    IXYS Corporation IXGH20N60B

    IGBT 600V 40A 150W TO247AD
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    DigiKey IXGH20N60B Tube
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    Find more 20N60B price and stock on Findchips.com

    20N60B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N60B IXYS Hiperfast(tm) Igbt Original PDF
    20N60B3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60B3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60B3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60BD1 IXYS Hiperfast(tm) Igbt Original PDF

    20N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N60B

    Abstract: s9011
    Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF 20N60B O-24s 20N60B s9011

    20n60B

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		PDF 20N60B O-220AB O-263 20n60B

    20N60 datasheet

    Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60
    Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original     		PDF 20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,


    Original     		PDF 20N60 20N60B O-220

    20N60 to220

    Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1
    Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original     		PDF 20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1

    20n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF 20N60B 20N60B O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF 20N60B

    20n60

    Abstract: No abstract text available
    Text: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original     		PDF 20N60 20N60B O-220 20N60B IXDP20N06B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		PDF 20N60B O-220AB O-263

    Untitled

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 20N60B2D1 IC110 8-06B 405B2

    DSEP 15-06A

    Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072

    20n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		PDF 20N60B 20N60B O-220) O-220 O-263

    20N60BD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES


    Original     		PDF 20N60BD1 20N60BD1 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 20N60B IXGP 20N60B = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		PDF 20N60B 20N60B O-263 O-220

    20N60B2D1

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 20N60B2D1 IC110 8-06B 405B2 20N60B2D1

    20N60BD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES


    Original     		PDF 20N60BD1 O-268 20N60BD1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient


    OCR Scan     		PDF 20N60BU1 100ns O-247

    Untitled

    Abstract: No abstract text available
    Text: aixYS HiPerFAST IGBT IXGH 20N60B VCES ^C25 VCE sat typ t.fi = = = = 600 V 40 A 1.7 V 100 ns Prelim inary data Symbol Test Conditions VCES Tj Vcon Maximum Ratings 600 V T J, = 25°C to 150°C: Rrc = 1 MQ u t 600 V VGES Continuous ±20 V VGEM Transient ±30


    OCR Scan     		PDF 20N60B

    20N60B

    Abstract: lc1512
    Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT V CES IC25 V CE sat typ t IXGA 20N60B IXGP 20N60B 600 V 40 A 1.7 V 100 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£2 600


    OCR Scan     		PDF 20N60B O-220) O-220 O-263 lc1512

    Untitled

    Abstract: No abstract text available
    Text: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600


    OCR Scan     		PDF 20N60BD1 O-247AD

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan     		PDF 20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

    ph-15 diode

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20


    OCR Scan     		PDF 20N60BD1 20N60BD1 O-268 O-247AD ph-15 diode

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXGA 1XGP 20N60B 20N60B VCES IC25 VCE sat typ = 600 = 40 = 1.7 tf , = 100 ns V A V Preliminary data sheet Maximum Ratings V C ES T, = 25°C to 150°C 600 V V CGR Tj = 25“C to 150°C; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient


    OCR Scan     		PDF 20N60B 20N60B TQ-220AB O-263

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		PDF O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1