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    20N120C3D Search Results

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    20N120C3D Price and Stock

    IXYS Corporation IXYH20N120C3D1

    IGBT 1200V 36A 230W TO-247AD
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    DigiKey IXYH20N120C3D1 Tube 1
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    Mouser Electronics IXYH20N120C3D1 79
    • 1 $11.12
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    TME IXYH20N120C3D1 283 1
    • 1 $12.5
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    IXYS Corporation IXYJ20N120C3D1

    IGBT 1200V 21A 105W TO247
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    DigiKey IXYJ20N120C3D1 Tube 300
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    Bristol Electronics IXYJ20N120C3D1 60
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    TTI IXYJ20N120C3D1 Tube 300
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    TME IXYJ20N120C3D1 1
    • 1 $15.24
    • 10 $12.08
    • 100 $10.82
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    IXYS Corporation IXYT20N120C3D1HV

    IGBT 1200V 36A TO268HV
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    DigiKey IXYT20N120C3D1HV Tube 300
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    TTI IXYT20N120C3D1HV Tube 300
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    TME IXYT20N120C3D1HV 1
    • 1 $13.55
    • 10 $10.82
    • 100 $9.7
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    Littelfuse Inc IXYJ20N120C3D1

    Disc Igbt Pt-Hifrequency Isoplus247/ Tube |Littelfuse IXYJ20N120C3D1
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    Newark IXYJ20N120C3D1 Bulk 300
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    Littelfuse Inc IXYT20N120C3D1HV

    Disc Igbt Xpt-Genx3 To-268Aa/ Tube |Littelfuse IXYT20N120C3D1HV
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    Newark IXYT20N120C3D1HV Bulk 300
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    20N120C3D Datasheets Context Search

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    20n120c3d

    Abstract: HGTG20N120C3 LD26TM
    Text: 20N120C3D S E M I C O N D U C T O R 45A, 1200V, UFS Series N-Channel IGBT April 1998 Features Description • 45A, 1200V TC = 25oC The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		PDF HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 1-800-4-HARRIS 20n120c3d HGTG20N120C3 LD26TM

    HGTG20N120C3D

    Abstract: 20N120C3D 12V 200A Relay LD26
    Text: 20N120C3D Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 12V 200A Relay LD26

    20N120C3D

    Abstract: No abstract text available
    Text: 20N120C3D Semiconductor October 1998 Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG20N120C3D HGTG20N120C3D 1-800-4-HARR 20N120C3D

    20N120C3D

    Abstract: No abstract text available
    Text: 20N120C3D S em iconductor Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG20N120C3D HGTG20N120C3D 1-800-4-HARR 20N120C3D